UTCMCR100 UTC | Alldatasheet
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UTC UNISONIC TECHNOLOGIES CO., LTD. 1 PLASTIC SILICON CONTROLLED RECTIFIERS
DESCRIPTION
PNPN devices designed for high volume, line- powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-92 package which isreladily adaptable for use in automatic insertion equipment. *Sensitive Gate Trigger Current - 200 µA Maximum *Low Reverse and forward Blocking Current - 100 µA Maximum, Tc=125 °C *Low Holding Current – 5mA Maximum *Glass- Passivated Surface for Reliability and Uniformity *Also Available with TO-5 or TO-18 Lead Form TO-92 1:CATHODE 2:GATE 3:ANODE THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX UNIT Thermal Resistance, Junction to Case R £cJC 75 °C/W Thermal Resistance, Junction to Ambient R £cJA 200 °C/W ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL MAX UNIT Peak Reverse Blocking Voltage MCR100-4 MCR100-6 MCR100-8 V RRM 200 400 600 V Forward Current RMS IT( RMS) 0.8 A Peak Forward Surge Current, TA=25 °C (1/2 cycle, Sine Wave, 60Hz) ITSM 10 A Circuit Fusing Considerations, TA=25 °C (t=1 to 8.3 ms) I2 t 0.415 A 2 s Peak Gate Power – Forward, TA=25 °C P GM 0.1 W Average Gate Power – Forward, TA=25 °C P GF( AV) 0.01 W Peak Gate Current – Forward, TA=25 °C(300 µs, 120PPS) IGFM 1 A Peak Gate Voltage - Reverse V GRM 5 V Operating Junction Temperature Range @ Rated VRRM and VDRM Tj -65 to +110 °C Storage Temperature Range Tstg -40 to +150 °C Lead Solder Temperature (<1/16 ” from case, 10 s max) 230 °C
UTC UNISONIC TECHNOLOGIES CO., LTD. 2 ELECTRICAL CHARACTERISTICS (Tj=25 °C unless otherwise stated) PARAMETER SYMBOL MIN MAX UNIT Peak Forward Blocking Voltage (Tc=125 °C) MCR100-4 MCR100-6 MCR100-8 VDRM 200 400 600 V Peak Forward or Reverse Blocking Current (Rated VDRM or VRRM) Tc=25 °C Tc=125 °C IDRM,IRRM 100 µA µA Forward “ On ” Voltage (Note1) (ITM=1A peak @ TA=25 °C) VTM 1.7 V Gate Trigger Current (continuous dc) (Note 2) Tc=25 °C (Anode Voltage=7Vdc, RL=100 Ω ) IGT 200 µA Gate Trigger Voltage (continuous dc) Tc=25 °C (Anode voltage=7Vdc, RL=100 Ω ) Tc=-40 °C (Anode Voltage=Rated VDRM, RL=100 Ω ) Tc=125 °C VGT 0.1 0.8 1.2 V Holding Current Tc=25 °C (Anode Voltage=7Vdc, initiating current=20mA) Tc=-40 °C IH 5 mA Notes: 1. Forward current applied for 1 ms maximum durati on, duty cycle <=1% 2. RGK current is not included in measurement.