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WEJ ELECTRONIC CO.,LTD MCR 100- 6, - 8 Silicon Planar PNPN Thyristor
FEATURES
Current-IGT: 2 0 0 µA I TRMS: 0 . 8 A V DRM: MCR100-6: 400 V MCR100-8: 600 V Operating and storage junction temperature range T J, Tstg: -55 ℃ to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT On state voltage * VTM I TM=1A 1.7 V Gate trigger voltage VGT V AK=7V 0.8 V Peak Repetitive forward and reverse blocking voltage M C R 1 0 0 - 6 M C R 1 0 0 - 8 VDRM AND VRRM IDRM= 10 µA ,VMAX=1010 V 400 600 V Peak forward or reverse blocking Current IDRM IRRM VAK= Rated VDRM or V RRM µ A Holding current IH I HL= 20 mA , Av = 7 V 5 mA A2 5 15 µ A A1 15 30 µ A A 30 80 µ A Gate trigger current IGT B VAK=7V 80 200 µ A * Forward current applied for 1 ms maximum duration, duty cycle 1%. 1 2 3 TO-92 1. KATHODE 2. GATE 3. ANODE MCR100-6/100-8 Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS
WEJ ELECTRONIC CO.,LTD MCR100-6/100-8 Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS