MCR100-6 FS | Alldatasheet
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Technical content
MCR100-6/F , -8/F 2011. 12. 06 1/2Revision No : 0 Silicon Planar PNPN Thyristor MAIN FEATURES Symbol Value Unit IT(RMS) A 8 . 0 MCR100-6/F 400 VDRM/VRRM MCR100-8/F 600 V TJ Junction Temperature -40 to 125 ℃ Tstg Storage Temperature -55 to 150 ℃
DESCRIPTION
Logic level sensitive gate triac intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
FEATURES
Blocking voltage to 400 V (MCR100-6/F) , 600V (MCR100-8/F) RMS on-state current to 0.8 A General purpose switching
APPLICATIONS
Phase control applications Solid state relays. ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol T est conditions MIN MAX UNIT On state voltage * VTM ITM=1A 1.7 V Gate trigger voltage VGT VAK=7V 0.8 V Peak Repetitive forward and reverse blocking voltage MCR100 -6/F MCR100-8/F VDRM AND VRRM IDRM= 10 μA 400 600 V Peak forward or reverse blocking current IDRM IRRM V AK= Rated V DRM or V RRM 10 µA Holding current IH I HL=20mA ,VAK =7V 5 mA A µ 25 52 A A µ 0 3 5 11 A A µ 100 20 A Gate trigger current IGT B VAK=7V 80 200 µA * Forward current applied for 1 ms maximum duration，duty cycle≤1%。 1. CATHODE 2. GATE 3. ANODE Gate Cathode Symbol Anode 1. CATHODE 2. ANODE 3. GATE TO-92 DIM MILLIMETERS A B C D F G H J L
4.70 MAX
4.80 MAX
3.70 MAX
1.00 1.27 0.85 0.45 14.00 0.50 2.30 D 1 2 3 B AJ G H F F L E C E C M
0.51 MAXM
0.55 MAX
A B D E G H K 2.50 0.20
1.70 MAX
0.45 0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.7 MAX
0.7 MIN
0.5 0.15/-0.10 SOT-89 C J G D A C K J F MILLIMETERS H B E F 1 2 3 F D
MCR100-6/F , -8/F 20011 12. 06 2/2Revision No : 0 Typical Characteristics