MCM2532

MCM2532 MOTOROLA | Alldatasheet

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4096 x 8-BIT UV ERASABLE PROM Mos (N-CHANNEL, SILICON-GATE) The MCM2532 is a 32,768-bit Erasable and Electrically Reprogram- mable PROM designed for system debug usage and similar applications 4096 x 8-BIT requiring nonvolatile memory that could be reprogrammed periodically UV ERASABLE PROM The transparent window in the package allows the memory content to be erased with ultraviolet light For ease of use, the device operates from a single power supply and has static power-down mode. Pin-for-pin compatible mask program- mable ROMs are available for large volume production runs of systems initially using the MCM2532 ny @ Single +5 V Power Supply Vy © Organized as 4096 Bytes of 8 Bits Wh SUFFIX - FRIT-SEAL CERAMIC PACKAGE © Automatic Power-Down Mode (Standby) Nea © Fully Static Operation (No Clocks) © TTL Compatible During Both Read and Program @ Maximum Access Time = 450 ns MCM2532 © Pin Compatible with MCM684332 Mask Programmable ROMs © Power MCM2532 Active — 150 mA Max PIN ASSIGNMENT Standby — 25 mA Max aqie 24 Veo Aet}2 2348 Asq3 22fas ats 2) [1Vpp J a3qs 20 E/Progr q q MOTOROLA'S PIN-COMPATIBLE EPROM FAMILY a2te ‘9 HAI0 q 32K. 10K ) acre avec J bree F sree aig ian ud aba q bas ds Bae aogs 17 paz ag Pe d E q is Daogs 16 loas ag pee d P d Dare oaig}io 15 bas wd peer q Foe q oe pozq}i 14f}o04 Feat peas q Boot q foe Vss12 13)b03 vss 0a: q pros qyz___spoar MCM6S764 MCW id MOTOROLA'S PIN-COMPATIBLE ROM FAMILY 64K 32K. 16K. a ene cb mba ds ze mc] Bary qe [ap di fabs =q par) de B ds bs A vee Address ag paw dy e a wee” ba. Data Input/Output ad Bar de tba qe 5a E/Progr Duat Function Enable ood Boe de wo q = (Power-Down/Program Pulse) ad be che sbos de ebes wad pe : ey du upe *New industry standard nomenciature MCMESKI64 MBAS “ Te INDUSTRY STANDARD PINOUTS DS-9816/4-80 4-21 - . 1 www.chipdocs.com Be sure to visit ChipDocs web site for more information.

ABSOLUTE MAXIMUM RATINGS a Rating [Value Unit | Operating Temperature Range +70 against damage due to high static voltages or elec- Storage Temperature tric fisids; however, itis advised that normal precau- All Input/Output Voltages with oa] v tions be taken to avoid application of any voltage Respect to V: +610 -0. higher than maximum rated voltages to this high- Vpp Supply Voltage with Respect to Vgs, +78 10-03 impedance circuit. NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are ex- ceeded. Functional operation should be restricted 10 RECOMMENDED OPERAT ING CONDITIONS. Exposure to higher than recommended voltages for extended penods of time could affect device rehabrity. MODE SELECTION Pin Number ms isu ec im pa |ss{ &/Progr Vpp | Voc Reed Data Out EM [Output Disable HignZ [Vss [Vin _[St0 25 v|_Vec | Standby Pulsed [Prose vent rig e BLOCK DIAGRAM Data | ata Input/Output DOO-DQ7 FIGURE 1 — AC TEST LOAD ° Seo eee ee 50 E/Progr = oT Controt i AL=22k [LIT TTT {I Test Point ° a | . oy ; 100 pF 6k Mmoe1so o— pecoder Y Gating or Equiv. ° econ MMD7000 | = or Eau. AGAIOK © — “includes Jig Capacitance = > Memory ° x Matrix ° Decoder (256 x 128) 4-22 . + www.chipdocs.com Be sure to visit ChipDocs web site for more information.

CAPACITANCE (i = 1.0 MHz, 1, = 25°C. periodically sampied rather than 100% tested.) CC haractisie ——St| Ty | Ma [Ur [ieeurCopastaree Waco in 40 60 | or [Qviput Capacitance VoyrsOW) Coe POT 2 Tv] Capacitance measured with a Boonton Meter or effective capacitance calculated from the equation: C= 1Ay/AV. DC OPERATING CONDITIONS AND CHARACTERISTICS {Fully operating voltage and temperature range unless otherwise noted? RECOMMENDED DC OPERATING CONDITIONS ( Perametor Symbol [Min [Typ [Max] Unit] Supply Voltage* MCM2532[ Voc | 4.75 52 | y vpp_ | 4.75 5.25 [spur gh votuge 2 P= [Wee PV [par tow vonage os] RECOMMENDED DC OPERATING CHARACTERISTICS (Characteristic Condition [Symbol T Min [Max [unit | | Aoaress and Einpur Sink Curent inebzv | tn | = | 0 [| [output teakage Curent i Vr of — P10 | [cc Sunpiy Covent (Siang SSCS = tcc | — | | Vc Supply Current” (Active momasa2| E=va_ | lec2 | — [10 | mA] [pe SuppiyGuren® ir 8 eet | — [50 | [ Output Low Voltage ton =2.tma [vou [= Toast v | [Cocina ign Votage Fron 00 von PE *Vec must be applied simultaneously or prior to Vp. VCC must also be switched off simultaneously with or after Vp. With Vpp connected directly to VCC during the read operation, the supply current would be the sum of Ipp1 and icc AC READ OPERATING CONDITIONS AND CHARACTERISTICS q (Fuil Operating Voltage and Temperature Range Unless Otherwise Noted) ag a Input Rise and Fall Times. 20ns Output Load... eee eees ~ See Figure 1 a TD NS [Ero Ouipur Vaid eto [Tato ns] [Eto High 2 Output ear [oo P1090 Fs | [Dats Hoi tom Address E=vyy TT taxcax To T= vs J 4-23 - _ 1 www.chipdocs.com Be sure to visit ChipDocs web site for more information.

READ MODE TIMING DIAGRAMS [= Vi) —tavav— “tAxOX SOUCHMOC OC OU MOOOOUOY, AXXO Q (ata Ourr eS . Output Valid KO RK RK IN ae PREEREKE STANDBY MODE A (Address) Address Vahd New Address Valic EA Progr) Standby Mode Active Mode teHaz teLav DC PROGRAMMING CONDITIONS AND CHARACTERISTICS (Ta=25°C +5°C) RECOMMENDED PROGRAMMING OPERATION CONDITIONS: parameter Smo! | Min [Nom [Max [Unit | Voc. VppL | 4.75 | 50 | 525 Supply Voltage _ Ver 2 | me | M Input High Voltage for Data [vin [22 | — [vec+t Input Low Voltage for Data . [vu P-or = T0685 “Vcc must be appiied simultaneously or prior to VPP. VCC must also be switched off simultaneously with or after Vp. The = device must not be inserted into or removed from @ board with Vpp at +25 V. Vpp must not exceed the +26 V maximum ro) specifications. a PROGRAMMING OPERATION OC CHARACTERISTICS a [Characteristic TT Concition [Symbol [ Min T Typ [Max | Unit] [wpe Proxammng Pose Suppy Curent Npp=SVaTW | Poatevy | ieee | — [| — | | ma [ce Supply Curent = wens ice P= = F160 Ta} AC PROGRAMMING OPERATING CONDITIONS AND CHARACTERISTICS (characteris Smo Min [a | Unit | Address Seiup Time [raver [20 [ - | os | Address Hold Time 20[ - Jus Vep to Enable Low Time _ | tue | 0 | ~ J os Data Hold Time _ tenoz_| 20 [ - [NepHow tre cee 0 = [erate Pograni Aawwe Tine te [Eratie te/Pogi Puce Tansion Time re [Wap Rie and Fl Time tom Bt 25V ee OE *It shorter than 45 ms (min! pulses are used, the same number of pulses should be applied after the specific data has been verified. To ensure that good programming levels have been written, see special programming. 4-24 www.chipdocs.com Be sure to visit ChipDocs web site for more information.

PROGRAMMING OPERATION TIMING DIAGRAM Vin Vin 7 ‘avec —> ea VOH/¥IH Vouvit IDVEL’ tEHOZ tELQV tPHEL TELEH Vin E/Proar vie TPLEL VEPH PILI YVYY TEKKEN AIXYXY 0.0.9, Yee RRR MRR AX PROGRAMMING INSTRUCTIONS To take full advantage of the shorter programming pulses, an iterative algorithm is recommended. Actual programming Before programming, the memory should be submitted to algorithms can be varied provided the following conditions a tull ERASE operation to ensure every bit in the device is in are met: 1) Program pulses will be applied one to each se- the “1” state (represented by Output High). Data are entered quential location (no multiple pulses at one iocation); and 2) by programming zeros (Output Low) into the required bits after the part programs successtully, five additional 2 The words are addressed the same way as in the READ millisecond pulses should be applied at each location. operation. A programmed “0” can only be changed to a "1"" Using this iterative method, the programming time per by ultraviolet light erasure location becomes 12 milliseconds minimum to 50 To set the memory up for PROGRAM mode, the VppP in- milliseconds maximum put (pin 21) should be raised to +25 V. The Vcc supply voltage is the same as for the READ operation, Programming READ OPERATION data is entered in 8-bit words through the data out (DQ) ter- minats while E/Progr is high. Only “0's” will be programmed After access time, data is valid at the outputs in the READ when "0's" and ''1's” are entered in the data word. mode. After address and data setup, @ 50 ms program pulse (ViH to ViL! is applied to the E/Progr input. A program pulse is ERASING INSTRUCTIONS applied to each address location to be programmed. The maximum program pulse width is 55 ms; therefore, program- The MCM2532 can be erased by exposure to high intensity Pigmest not be attempted with a d¢ signal applied to the shortwave ultraviolet light, with a wave-length of 2537 £/Progt input angstroms. The recorimended integrated does li.e., UV- Multiple MCM2532s may be programmed in parallel with intensity X exposure time) is 15 Ws/cm2, Asan example, us- the same data by connecting together like inputs and apply- ing the “Model 30-000” UV-Eraser Turner Designs, Moun- ing the program pulse to the E/Progr inputs. Different data tain View, CA 94043) the ERASE-time is 36 minutes. The may be programmed into multiple MCM2532s connected in lamps should be used without shortwave filters and the parallel by using the PROGRAM INHIBIT mode. Except for MCM2532 should be positioned about one inch away from the E/Progr pin, all like inputs may be common the UV-tubes. PROGRAM VERIFY for the MCM2532 is the read opera- tion RECOMMENDED OPERATING PROCEDURES SPECIAL PROGRAMMING After erasure and reprogramming of the EPROM, it is The MCM2632 can be programmed with pulses as short as recommended that the quartz window be covered with an 2 milliseconds to minimize programming time. This can opaque self-adhesive cover. It is important that the self- represent considerable cost savings when programming a adhesive cover not leave any residue on the quartz if it is large number of devices removed to allow another erasure 4-25 - . } www.chipdocs.com Be sure to visit ChipDocs web site for more information.

TIMING PARAMETER ABBREVIATIONS TIMING LIMITS tx X XK X The table of timing values shows either a minimum or @ signal name from which interval is defined — maximum limit for each parameter. Input requirements are transition direction for first signal specified from the external system point of view. Thus, ad signal name to which interval is defined dress setup time is shown as a minimum since the system transition direction for second signal must supply at least that much time (even though most devices do not require it). On the other hand, responses from The transition definitions used in this data sheet are: the memory are specified from the device point of view. H = transition to high Thus, the access time is shown as a maximum since the L = transition to low device never provides data later than that time. V = transition to valid X = transition to invalid or don’t care Z = transition to off (high impedance) WAVEFORMS Waveform Input Output Symbol a Must Be Will Be WW Change ‘Will Change From H to L From H to L LF Change ‘Will Change From L to H From L toH Don't Care. Changing Permitted Unknown —_ High Impedance a a wW 4-26 www.chipdocs.com Be sure to visit ChipDocs web site for more information.