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- Epoxy meets UL 94 V-0 flammability rating Maximum Ratings @ 25 OC Unless Oth erwise Specified Symbol Parameter Rating Unit VDS Drain-source Voltage -12 V ID Drain Current-Continuous -6 A ID M Pulsed Drain Current (note1) -20 A VGS Gate-source Voltage /g1028 V R /g169JA Thermal Resistance Junction to Ambient(note1) 357 /g1082/W TJ Operating Junction Temperature -55 to +150 /g1082 TSTG Storage Temperature -55 to +150 /g1082 Revision: A 2016/02/03
- Moisture Sensitivity Level 1 INCHES MM DIM MINMAX MINMAX NOTE DFN2020-6J
- Advanced trench MOSFET process technology
- Ultra low on-resistance with low gate charge
- Halogen free available upon request by adding suffix "-HF" (1).Repetitive rating:Pluse width limited by junction temperature A 0.700 0.800 0.028 .032 B 0.203REF.0.008REF. C 0.000 0.050 0000 0.002 D 1.924 2.076 0.076 0.082 E 1.924 2.076 0.076 0.082 F 0.800 1.000 0.031 0.039 G 0.850 1.050 0.033 0.041 H 0.200 0.400 0.008 0.016 K 0.460 0.660 0.018 0.026 L 0.650TYP.0.026TYP. M 0.250 0.350 0.010 0.014 N 0.174 0326 0.007 0.013 Dimensions Micro Commercial Components M C C R /G01/G02/G03/G04/G05/G06/G07/G05/G08/G08/G09/G04/G03/G02/G0A/G0B/G06/G07omponents
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/G07/G18/G06/G19/G0F/G1A/G0F/G0F /G1B/G15/G05/G1C/G09/G1D/G06/G1E/G1F/G0F/G1F/G20/G06/G21/G10/G0F/G22/G23/G19/G1A/G1A /G24/G0A/G25/G1D/G06 /G06 /G06 /G1E/G1F/G0F/G1F/G20/G06/G21/G10/G0F/G22/G23/G19/G1A/G19 www.mccsemi.com 1 of 4 Equivalent Circuit B D E F G H J C A K L M N
- Marking:1206 1.DRAIN 2.DRAIN 3.GATE 4.SOURCE 5.DRAIN 6.DRAIN
Revision: A 2016/02/03 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Micro Commercial Components M C C R www.mccsemi.com 2 of 4 Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -12 Gate-source threshold voltage VGS(th) DSV =VGS, ID =-250µA -0.5 -0.9 V Gate-source leakage IGSS DSV =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS DSV =-8V, VGS =0V -1 µA VGS =-4.5V, ID =-3.5A 30 45 VGS =-2.5V, ID =-3A 40 60 Drain-source on a-state resistance R DS(on) VGS =-1.8V,ID=-2.0A 60 90 mΩ Forward transconductancea fsg VDS =-5V, ID =-4.1A 6 S Dynamic Input capacitanceb,c Ciss 740 Output capacitanceb,c Coss 290 Reverse transfer capacitanceb,c Crss VDS =-4V,VGS =0V,f =1MHz 190 pF VDS =-4V,VGS =-4.5V, ID =-4.1A .8 7.8 7 Total gate chargeb g Q .5 4.5 4 Gate-source chargeb Qgs 1.2 Gate-drain chargeb gd Q VDS =-4V,VGS =-2.5V, ID =-4.1A 1.6 nC Gate resistanceb,c Rg f =1MHz 1.4 7 7 14 Ω Turn-on delay timeb,c td(on) 3 2 13 1 Rise timeb,c r t 35 35 5 Turn-off Delay timeb,c d(off) t 32 32 4 Fall timeb,c f t VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-4.5V,Rg=1Ω 10 10 2 Turn-on delay timeb,c td(on) 5 5 10 Rise timeb,c r t 11 11 1 Turn-off delay timeb,c d(off) t 22 22 3 Fall timeb,c f t VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-8V,Rg=1Ω 6 2 16 1 ns Drain-source body diode characteristics Continuous source-drain diode current I S -6 Pulse diode forward currenta SMI -20 A Body ciode voltage VSD F=I -3.3A -1.2 V Note : a. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%. b. Guaranteed by design, not subject to production testing. c. These parameters have no way to verify.
Micro Commercial Components M C C R Revision: A 2016/02/03 www.mccsemi.com 3 of 4 -0.4 -1.6 -2.0 -0.1 -10 -0 -4 -12 -16 -0 -2 -10 -12 120 180 -0 -4 -6 100 150 200 -0.0 -2.0 25 50 75 100 125 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 Ta=100℃ Pulsed VSDIS — — Ta=25℃ Pulsed SOURCE CURRENT IS (A) -0.8 -1.2 SOURCE TO DRAIN VOLTAGE VSD (V) Output Charact eristics VGS=-1.5V DRAIN CURRENT ID (A) -1 -2 -3 DRAIN TO SOURCE VOLTAGE VDS (V) VGS=-4.5V VGS=-2.5V Ta=25℃ Pulsed ON-RESISTANCE RDS(ON) (mΩ) -4 -6 -8 DRAIN CURRENT ID (A) —— IDRDS(ON) VGS=-1.8V Ta=25℃ Pulsed ID=-3.3A Ta=100℃ Pulsed ON-RESISTANCE RDS(ON) (mΩ) GATE TO SOURCE VOLTAGEGATE GS (V) VGSRDS(ON) Ta=100℃ Pulsed Ta=25℃ Pulsed VDS=-3V VGS=-2V DRAIN CURRENT ID (A) -0.5 -1.0 -1.5 GATE TO SOURCE VOLTAGE VGS (V) Transfer C h aracteristics ID=-250uA Threshold Voltage THRESHOLD VOLTAGE VTH (V) AMBIENT TEMPERATURE Ta (℃) V
Revision: A 2016/02/03 Device Packing Part Number-TP Tape&Reel:3Kpcs/Reel Ordering Information : Micro Commercial Components Corp. reserves th e rig ht to make changes without further notice to any product herein to make c orrections, modifications , enhancements , improvements , or other changes . Micr o Commercial Components Corp . d oes not assume any liability arising out of the application or use of any product described herein; neither does it conve y any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risk s of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are repr esented on our website, harmless against all damages. MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Micro Commercial Components Corporation. Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages custo mers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine par ts, have full traceability, meet MCC's quality standards for handling and storage. M CC will not provide any warranty coverag e or other assistance for parts bought from Unauthorized Sources. MCC i s committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distr ibutors. Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF Micro Commercial Components M C C R www.mccsemi.com 4 of 4