MCL4448 DGNJDZ | Alldatasheet
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Technical content
Silicon Epitaxial Planar Switching Diode Fast switching diode in MiniMELF case especially suited for automatic surface mounting. Absolute Maximum Ratings (T a = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage V RM 100 V Reverse Voltage V R 75 V Average Rectified Forward Current I F(AV) 150 mA Surge Forward Current at t < 1 s I FSM 500 mA Power Dissipation P tot 500 mW Junction Temperature T j 175 OC Storage Temperature Range T stg - 65 to + 175 OC Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 5 mA at IF = 100 mA VF 0.62 0.72 V Reverse Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC IR IR IR nA µA µA Reverse Breakdown Voltage at IR = 100 µA V(BR)R 100 - V Capacitance at VR = 0, f = 1 MHz Ctot - 4 pF Reverse Recovery Time at IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω trr - 4 ns LS-31 Glass Case MicroMELF