MCL4148 OLITECH | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- Saving space
- Hermetic sealed parts
- Fits onto SOD 323 / SOT 23 footprints
- Electrical data identic al with the device 1N4148
- Micro Melf package
Applications
Absolute Maximum Ratings (T j = 25 O Parameter Test Symbol Value Unit Repetitive Peak Reverse Voltage - V RRM 100 V Reverse Voltage - V R 75 V Peak Forward Surge Current t p = 1μS I FSM 2 A Repetitive Peak Forward Current - I FRM 450 mA Forward Current - I F 200 mA Average Forward Current V R = 0 I FAV 150 mA Power Dissipation - P tot 500 mW Junction Temperature - T j 175 O C Storage Temperature Range - T s -65 … +175 O C Maximum Thermal Resistance (T j = 25 O Parameter Test Conditions Symbol Value Unit Junction ambient mounted on epoxy-glass hard tissue, 35 μm copper clad, 0.9 mm copper area per electrode R thJA
500 K/W
Email: info@olitech-elec.com Website: www.olitech-elec.com Characteristics at T j = 25 O C Parameter Test Conditions Symbol Min Typ Max Unit Forward Voltage I F = 50mA V F - 0.86 1 V V R = 20V I R - - 25 nA V R = 20V, T j = 150 O C I R - - 50 μA Reverse Current V R = 75V I R - - 5 μA Breakdown Voltage I R Tp = 0.3ms V (BR) 100 - - V Diode Capacitance V R = 0, f = 1MH Z , V HF = 50mV C D - - 4 pF Rectification Efficiency V HF = 2V, f = 100MH Z η r 45 - - % I F = I R = 10mA, Ir A t rr - - 8 ns Reverse Recovery Time I F = 10mA, V R = 6V, i R = 0.1xl R R L = 100Ω t rr - - 4 ns
SILICON EPITAXIAL PLANAR DIODE Email: info@olitech-elec.com Website: www.olitech-elec.com