MCL4148 GXELECTRONICS | Alldatasheet
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Technical content
SMALL SIGNAL SWITCHING DIODE
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified) (Ratings at 25 C ambient temperature unless otherwise specified) DC Blocking Voltage VR Volts Volts mA mA C C mW VRM IAV IFSM Ptot TJ TSTG Non-Repetitive Peak Reverse Voltage 100 Power dissipation at TA=25°C Junction temperature Storage temperature range Non-Repetitive Peack Forward Surge Current @t=1.0s Average rectified current, Half wave rectification with Resistive load at TA=25°C and f 50Hz MECHANICAL DATA Case: MicroMELF glass case Weight: Approx. 0.03gram Forward voltage at IF=50mA VF R JA Volts Volts nA K/W nA nA pF IR IR IR CJ trr Leakage current at VR=20V at VR=75V at VR=20V , TJ=150°C Reverse recovery time from IF=10mA to IR=1mA, VR=6V, RL=100W Junction capacitance at VR=VF=0V Thermal resistance junction to ambient Rectification efficiency at f=100MHz, VRF=2V 0.45 MicroMelf Dimensions in inches and (millimeters) 0.079(2.0) 0.071(1.8) 0.051(1.30) 0.047(1.20) Symbol UnitsValue Symbol UnitsMaxTyp.Min. -65 to +175 175 500 500 150 500 Voltage rise when switching on tested with 50mA pulse tP=0.1ms, Rise time<30ms, fP=5 to 100kHz Vfr 2.5 Silicon epitaxial planar diode SOD-523 case with the type designation 1N4148WT. type designation LL4148, the SOD-123 case with the type designation case with the type designation 1N4148, the MiniMelf case with the 1N4148W, the SOD-323 case with the type designation 1N4148WS, the 500mW power dissipation Fast switching diode This diode is also available in other case styles including: the DO-35 0.026(0.48) 0.016(0.28) ns XINGHE ELECTRONICS 星合电子 GAOMI XINGHE ELECTRONICSCO.,LTD. WWW.SDDZG.COM TEL:0536-2210359 QQ:464768017
FIG 1-FORWARD CHARACTERISTICS FIG 3-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE FIG 2: DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT FIG. 4-RELATIVE CAPACITANCE VERSUS VOLTAGE 0 0100 8642200 C 10V 100 0.7 200 300 0.9 400 500 1.1 600 700 1.3 800 900 1.5 1000 1 10 1010 101 -2 -1 2 VF TA VR rfIF Ptot Cj(VR) Cj(0V) IF mA mW mA TJ=100 C TJ=25 C TJ=25 C f=1KHz TJ=25 C f=1MHz W MCL4148 SMALL SIGNAL SWITCHING DIODE XINGHE ELECTRONICS 星合电子 GAOMI XINGHE ELECTRONICSCO.,LTD. WWW.SDDZG.COM TEL:0536-2210359 QQ:464768017
FIG 6: LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE FIG.5 RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT FIG 7: ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION 10 10 10 10 1 0.1 V=0 0.1 0.2 0.5 100 10S10 -4 -3 -2 -1 IFRM tp A VO5KW 60W 2nFVRF=2V D.U.T. T I V=tp/T T=1/fp IFRM tp nA VR=20V 0 100 200°C IR Tj MCL4148 SMALL SIGNAL SWITCHING DIODE XINGHE ELECTRONICS 星合电子 GAOMI XINGHE ELECTRONICSCO.,LTD. WWW.SDDZG.COM TEL:0536-2210359 QQ:464768017