MCL4148 DAESAN | Alldatasheet

Document overview

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Technical content

Features

  • Silicon epitaxial planar diode
  • Fast switching diodes
  • 500mW power dissipation
  • This diode is also available in the DO-35 case with the type designation 1N4148
  • Case: Mini-MELF glass case(DO-35)
  • Weight: Approx. 0.05 gram Maximum Ratings And Electrical Characteristics

Electrical characteristics

(Ratings at 25¡É ambient temperature unless otherwise specified) (Ratings at 25¡É ambient temperature unless otherwise specified) Symbol Value Units Average rectified current, Half wave rectification with Resistive load at TA=25¡É and F¡Ã50Hz mA1501) Surge forward current at t<1S and TJ=25¡É ¡É-65 to +175Storage temperature range Reverse Voltage Volts75VR IAV IFSM 500 TSTG Junction temperature TJ 175 mA 1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) Peak Reverse Voltage Volts100VRM Power dissipation at TA=25¡É mW5001)Ptot Symbols Units Leakage current at VR=20V at VR=75V at VR=20V, TJ=150¡É Junction Capacitance at VR=VF=0V IR IR IR CJ Min. Thermal resistance, junction to Ambient Typ. Max. 3501) K/W Forward voltage Volts1VF R¥èJA pF Reverse Recovery time from IF=10mA to IR=1mA, VR=6V, RL=100¥Ø 4 nstrr 1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) Voltage rise when switching ON tested with 50mA pulse tp=0.1¥ìS, Rise time<30¥ìS, fp=5 to 100KHz Volts2.5Vfr Rectification efficiency at f=100MHz, VRF=2V 0.45¥ç Dimensions in inches and (millimeters) MELF 0.079(2.00) 0.071(1.80) 0.008(0.20) SOLDERABLE ENDS 0.043(1.10) MICRO nA ¥ìA ¥ìA

FIG.1-FORWARD CHARACTERISTICS TJ=25¡ÉTJ=100¡É 10 2V IF VF mA 10-1 10-2 102 103 FIG.2-DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT rf IF TJ= 25¡É f=1KHz 110-110-2 10210 103 102 104 mA FIG.3-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE 1000 200 ¡É TA Ptot 100 300 200 1000 900 800 700 600 500 400 mW FIG. 4-RELATIVE CAPACITANCE VERSUS VOLTAGE TJ= 25¡É f=1MHz 20 10V864 0.7 0.8 1.0 0.9 1.1 VR Ctot(VR) Ctot(OV) RATINGS AND CHARACTERISTIC CURVES MCL4148

FIG.5-RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT VO5K2nFVRF=2V D.U.T. FIG.6-LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE 1000 200 ¡É nA 103 102 104 VR= 20V FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION tp 110-110-2 10S10-310-5 10-4 0.1 100 IFRM A V=tp/T T=1/fp tp IFRM T n=0 0.1 0.5 0.2 RATINGS AND CHARACTERISTIC CURVES MCL4148