MCL245 SEMTECH | Alldatasheet
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SILICON EPITAXIAL PLANAR DIODE Features x uN ¢ Fast switching diode AR \\ ¢ Fits onto SOD 323 / SOT 23 footprints | " ib, i) Micro Melf package | a i \\ Absolute Maximum Ratings (T,= 25°C) ee Mean Rectified Current 200 mA Half Wave Rectification with Resistance load at Tams = 25°C and f/50 Hz [ weirun Fowardcuren ———SSSSCSC*idCe |i {& 7°) | SEMTECH ELECTRONICS LTD. (Wholly owned subsidiary of Honey Technology Ltd.) = Dated : 20/08/2002
Characteristics at T,= 25°C Forward Voltage at |p=200mA Ve Vv Leakage Current at Vp=220V 10 pA Reverse Breakdown Voltage tested with 100uA Pulses Ver 250 Vv Capacitance at Ve=Vp=0, f= 1MHz Crot 3 pF Reverse Recovery Time From Ip=Ip=20mA te 75 Dimensions in mm Cathode indification 1.35 max. Glass t. | 6 R>2.5 4 — SSS & Glass =| L--o21+005 i 2.04/-0.1 Glass case | © Micro MELF technical drawings according to DIN specifications ae SEMTECH ELECTRONICS LTD. (Wholly owned subsidiary of Honey Technology Ltd.) |e SZ ea SS — ® 150 po0t:2009 Dated ; 20/08/2002