MCK22-8 KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 Thyristor ■ Features
- Repetitive peak off-state voltages :600V
- R.M.S On-State Current ( IT(RMS)= 1.5 A )
- Low On-State Voltage (1.2V(Typ.)@ITM) 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ ■ Electrical Characteristics (Ta = 25℃, unless otherwise noted.) Parameter Symbol Test Conditions Min Typ. Max Unit Non-Trigger Gate Voltage (Note.1) VGD VAK = 12 V, RL=100 Ω ,Tc = 125 °C 0.2 On-state Voltage (Note.1) VTM IT=3A 1.7 VD=7V, RL=100Ω,Tc = 25 °C 0.8 Tc = -40 °C 1.2 VAK = VDRM or VRRM, RGK = 1000 Ω,Tc = 25 °C 10 Tc = 125 °C 200 VD=6 V, RL=100Ω, Tc = 25 °C 200 Tc = -40 °C 500 VAK = 12 V, Gate Open Tc = 25 °C 5 Tc = -40 °C 10 Critical Rate of rise of off-state Voltage dv /dt VGM = 0.67VDRM, TJ = 125 °C Exponential waveform , RGK = 1000 Ω 200 V/us Critical Rate of Rise On-State Current di/dt ITM = 3A, Ig = 10mA 50 A/us Holding Current IH mA Gate Trigger Voltage VGT Gate Trigger Current IGT Repetitive Peak Off-State Current IDRM uA V Note.1:Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1% 3. Gate 1. Cathode 2. Anode Parameter Symbol Rating Unit Peak Repetitive Forward Voltages VDRM 600 Reverse Peak Gate Voltage VRGM 5 Average On-State Current @ Tc =99 °C IT(AV) 1 RMS on-state Current IT(RMS) 1.5 Surge On-State Current @ 1/2 Cycle, 60Hz ITSM 15 Circuit Fusing Considerations @ t=8.3ms I2t 0.9 A2s Forward Peak Gate Current IFGM 0.2 A Reverse Peak Gate Voltage VRGM 5 V Peak Gate Power @ Pulse Width ≤ 1us PGM 0.5 Average Gate Power @ t=8.3ms PG(AV) 0.1 Thermal Resistance Junction to Ambient RthJA 125 Thermal Resistance Junction to Case RthJC 15 junction Temperature TJ 125 Storage Temperature range Tstg -40 to 150 V K/W W A SCR Thyristor MCK22-8
www.kexin.com.cn2 Thyristor ■ Typical Characterisitics TJ = 25 o C TJ = 125 o C Instantaneous On-State Current [A] Instantaneous On-State Voltage [V] VGD(0.2V) 25 ℃ IGM (0.2A)PG(AV) (0.1W) PGM (0.5W) VGM (5V) Gate Voltage [V] Gate Current [mA] Transient Thermal Impedance Time (sec) -50 0 50 100 150 0.3 0.6 0.9 1.2 1.5 VGT (t o VGT (25 o Junction Temperature [ o -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 IGT (t o IGT (25 o Junction Temperature [ o 100 120 140 θ = 180 o Max. Allowable Case Temperature [ o Average On-State Current [A] iFscitsiretcarahC etaG .1 giF g 2. Maximum Case Temperature Fig 3. Typical Forward Voltage Fig 4. Thermal Response θ : Conduction Angle 360° θ 2π π Fig 6. Typical Gate Trigger Current vs. Junction Temperature Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature SCR Thyristor MCK22-8
www.kexin.com.cn 3 Thyristor ■ Typical Characterisitics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 θ = 30 o θ = 90 o θ = 60 o θ = 180 o θ = 120 o Max. Average Power Dissipation [W] Average On-State Current [A] -40 -20 0 20 40 60 80 100 120 140 Holding Current [mA] Junction Temperature [ ]℃ Fig 8. Power DissipationFig 7. Typical Holding Current SCR Thyristor MCK22-8