MCK100

MCK100 UTC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

UNISONIC TECHNOLOGIES CO., LTD MCK100 Preliminary SCR w w w . u n i s o n i c . c o m . t w 1 of 4 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R601-041.a SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS „ DESCRIPTION The UTC MCK100 is a sensitive gate silic on controlled rectifiers reverse blocking thyristor. It provides the customers with high surge current capability, high blocking voltage to 600 V and high switching speed. The UTC MCK100 is suitable for sensing and detection circuits and high volume line – powered consumers applications „ FEATURES * High Surge Current Capability * High Blocking Voltage to 600 V * On–State Current Rating of 0.8 A RMS @ T C=80°C * High Switching Speed (20 V/μs Minimum @ TC=110°C) * Reliability and Uniformity „ SYMBOL SOT-89 „ ORDERING INFORMATION Ordering Number Pin assignment Lead Free Halogen Free Package 1 2 3 Packing MCK100L-x-xx-AB3-R MCK100G-x-xx-AB3-R SOT-89 K G A Tape Reel Note: Pin assignment: G: Gate K: Cathode A: Anode „ MARKING

UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw Q W - R 6 0 1 - 0 4 1 . a

UNISONIC TECHNOLOGIES CO., LTD 3 of 4 www.unisonic.com.tw Q W - R 6 0 1 - 0 4 1 . a „ ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT MCK100-3 100 MCK100-4 200 MCK100-6 400 Peak Repetitive Off-State Voltage(Note 2) (TJ=-40 ~ 110°C, Sine Wave, 50 ~ 60Hz, Gate Open) MCK100-8 VDRM VRRM 600 V Peak Gate Voltage – Reverse(TA=25°C, Pulse Width≤1.0μs) V GRM 5.0 V On-Sate RMS Current (TC=80°C) 180°C Condition Angles I T(RMS) 0.8 A Peak Non-Repetitive Surge Current (1/2 cycle, Sine Wave, 60Hz, TJ=25°C) ITSM 10 A Peak Gate Current-Forward (TA=25°C, Pulse Width≤1.0μs) I GM 1.0 A Circuit Fusing Considerations (t=8.3 ms) I 2t 0.415 A 2s Forward Peak Gate Power (TA=25°C, Pulse Width ≤1.0μs) P GM 2 W Forward Average Gate Power (TA=25°C, t=8.3ms) P G(AV) 0.1 W Operating Junction Temperature @ Rated VRRM and VDRM T J -40 ~ 125 °C Storage Temperature T STG -40 ~ 150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. V DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, posit ive gate voltage shall not be applied conc urrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. „ THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 200 °C/W Junction to Case θJC 75 °C/W „ ELECTRICAL CHARACTERISTICS(TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS TC=25°C 10Peak Repetitive Forward or Reverse Blocking Current (Note 1) TC=110°C IDRM IRRM VD=Rated VDRM and VRRM, RGK=1kΩ 100 μA ON CHARACTERISTICS Peak Forward On-State Voltage (Note 3) V TM I TM=1A Peak @ TA=25°C 1.7 V Gate Trigger Current (Continuous dc) (Note2) I GT V AK=7.0V, RL=100Ω, TC=25°C 40 200 μA TC=25°C 0.5 5.0Holding Current (Note 3) TC=-40°C IH VAK=7V, initiating current=20mA 10 mA TC=25°C 0.6 10Latch Current TC=-40°C IL V AK=7V, IG=200μA 15 mA TC=25°C 0.62 0.8Gate Trigger Current (continuous dc) (Note 2) TC=-40°C VGT V AK=7V, RL=100Ω 1.2 V DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage dV/dt VD=Rated VDRM, Exponential Waveform, RGK=1000Ω, TJ=110°C 20 35 V/ μs Critical Rate of Rise of On-State Current di/dt IPK=20A, PW=10μs, diG/dt=1A/μs, Igt=20mA 50 A/ μs Notes: 1. R GK=1000Ω included in measurement. 2. Does not include R GK in measurement. 3. Indicates Pulse Test Width ≤1.0ms, duty cycle ≤1%

UNISONIC TECHNOLOGIES CO., LTD 4 of 4 www.unisonic.com.tw Q W - R 6 0 1 - 0 4 1 . a „ VOLTAGE CURRENT CHARACTERISTIC OF SCR SYMBOL PARAMETER VDRM Peak Repetitive Off St at Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off St ate Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current VTM IH On State IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region Anode- +Voltage IDRM at VDRM Forward Blocking Region (off state) +Current Anode+ „ CLASSIFICATION OF IGT RANK B C AA AB AC AD RANGE 48 ~ 105 95 ~ 200 8 ~ 16 14 ~ 21 19 ~ 25 23 ~ 52 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.