MCK100-6 TGS | Alldatasheet
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Technical content
SOT-89 Plastic-Encapsulate Transistors MCK 100- 6，- 8 Silicon Planar PNPN Thyristor
FEATURES
Current-IGT : 200 μA I TRMS : 0 . 8 A V DRM : MCK100-6 ：400 V MCK100-8 ：600 V Operating and stor age junction temperature range T J，Tstg : -55℃ to +150 ℃ ELECTRICAL CHARACTERISTICS （Tamb=25℃ unless otherwise specified ） Parameter Symbol Test conditions MIN MAX UNIT On state voltage * VTM I TM=1A 1.7 V Gate trigger voltage VGT V AK=7V 0.8 V Peak Repetitive forward and reverse blocking voltage MCK100-6 MCK100-8 V DRM AND VRRM IDRM= 10 μA ,VMAX=1010 V 400 600 V Peak forward or reverse blocking Current I DRM IRRM V AK= Rated V DRM or V RRM 10 µA Holding current IH I HL= 20 mA , Av = 7 V 5 mA A2 5 15 µA A1 15 30 µA A 30 80 µA Gate trigger current IGT B VAK=7V 80 200 µA * Forward current applied for 1 ms maximum duration，duty cycle ≤1%。 SOT-89 1.KATHODE 2.ANODE 3.GATE TIGER ELECTRONIC CO.,LTD
Typical Characteristics MCK100-6,-8