MCK100-6 FS | Alldatasheet
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Technical content
- 02. 24 1/4Revision No : 0 Silicon PNPN Thyristor
FEATURES
Repetitive Peak Off-State Voltage: 400V R.M.S On–State Current (IT(RMS) = 0.8A) Low Gate Trigger Current: 200uA
Applications
Leakage detector, Electronic Ballast or protection circuit. General Description SCR product is a single directio nal PNPN device, has a low gate trigger current and high stab ility in gate trigger current to temperature, generally suitable for sensing and detection circuits. VDRM = 400 V IT(RMS) = 0.8 A ITSM = 11 A IGT = 200uA Absolute Maximum Ratings (TJ=25℃ unless otherwise specified ) Symbol Parameter Conditions Ratings U nit VDRM Repetitive Peak Off-State Voltage Sine wave, 50/60Hz, Gate open 400 V VRRM Repetitive Peak Reverse Voltage 400 V IT(AV) Average On-State Current Full sine wave, TC = 95.1℃ 0.5 A IT(RMS) R.M.S. On-State Current 0.8 A ITSM Surge On-State Current ½ cycle, 50Hz/60Hz, Sine wave, Non repetitive 10/11 A I2t Fusi ng Current t = 10ms 0.5 A2S PGM Forward Peak Gate Power Dissipation TJ = 125 ℃, pulse width ≤ 1.0us 2 W PG(AV) Forward Average Gate Power Dissipation T J = 125 ℃, t = 8.3ms 0.1 W IFGM Forward Peak Gate Current TJ = 125 ℃, pulse width ≤ 1.0us 1 A VRGM Reverse Peak Gate Voltage TJ = 125 ℃, pulse width ≤ 1.0us 5 V TJ Operating Junction Temperature -40~+125 ℃ TSTG Storage Temperature -40~+150 ℃ 1. CATHODE 2. ANODE 3. GATE DIM A B D E G H K
4.70 MAX
2.50 0.20
1.70 MAX
0.45 0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.7 MAX
0.7 MIN
0.5 0.15/-0.10 SOT-89 C J G D A C K J F MILLIMETERS H B E F 1 2 3 F D Gate Cathode Symbol Anode
- 02. 24 2/4Revision No : 0 Thermal Characteristics Electrical Characteristics (TC=25℃ unless otherwise specified ) Notes : 1. Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1% Symbol Parameter Conditions Min Typ Max U nit IDRM Repetitive Peak Off-State Current V D = VDRM TC=25℃ - - 50 uA TC=125℃ - - 5 mA IRRM Repetitive Peak Reverse Current V D = VDRM TC=25℃ - - 50 uA TC=125℃ - - 5 mA IGT Gate Trigger Current VD = 12V, RL=330Ω - - 200 uA VGT Gate Trigger Voltage VD = 12V, RL=330Ω - - 1.0 V VGD Non-Trigger Gate Voltage1 VD = 12V, RL=330Ω, TJ=125℃ 0.2 - - V VTM Peak On-State Voltage IT = 1.1A, IG = 5mA - 1.2 1.7 V dv/dt Critical Rate of Rise of Off-State Voltage VD = 2/3 VDRM, TJ=125℃ 10 - - V/us IH Holding current IT= 0.2A - - 1 mA Symbol Parameter Conditions Min Typ Max U nit RθJC Thermal Resistance Junction to Case 56 ℃/W RθJA Thermal Resistance Junction to Ambient 150 ℃/W
- 02. 24 3/4Revision No : 0 Typical Characteristics Fig 1. Average Current vs. Power dissipation Fig 2. Average current vs. Case Temperature Fig 3. Gate power characteristics Fig 4. Surge on state current rating (Non-repetitive) Fig 5. Gate trigger current vs. junction temperature Fig 6. Gate trigger voltage vs. junction temperature -50 -25 0 25 50 75 100 125 150 0 0 0 5 1 0 1 5 2 0 Junction temperature, TJ[℃] X 100(%)VGT(t℃) VGT(25℃) 1 10 100 50Hz 60Hz Surge on state current, ITSM [A] Time [cycles] 1 10 100 1000 0.1 25[℃] PG(AV)(0.1W) PGM(2W) VGD Gate voltage, VG [V] Gate current, IG [mA] 100 110 120 130 180 o 150 o 120 o90 o o o Maximum allowable case temperature, TC [ ℃] Average on state current, IT(AV) [A] 0 0 0.1 0.2 0 3 0.4 0.5 0 6 0 0 0 2 0.4 0 6 180 o 150 o 120 o o o o Power dissipation, PD [W] Average on-state current, IT(AV) [A] -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 X 100(%) IGT(t℃) IGT(25℃) Junction temperature, TJ [℃]
- 02. 24 4/4Revision No : 0 Typical Characteristics 0 5 1.0 1.5 2 0 2 5 3.0 3.5 4 0 0.1 125℃ Instantaneous on state current, IT[A] Instantaneous on state voltage, VT[V] 25℃ Thermal impedance [℃/W] Pulse Time [sec] Fig 7. Instantaneous on state current vs. Instantaneous on state voltage Fig 8. Thermal Impedance vs. pulse time Measurement of gate trigger current Note. Whole parameter and test condition can not be over absolute maximum ratings in this datasheet. RS=0.188Ω VTO=0.79V RG RL VD VG