MCH6602 ONSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Low ON-resistance
  • Ultrahigh-speed switching
  • 1.5V drive
  • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage V DSS 30 V Gate to Source Voltage V GSS ±10 V Drain Current (DC) I D 0.35 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 1.4 A Allowable Power Dissipation P D When mounted on ceramic substrate (900mm ×0.8mm) 1unit 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Package Dimensions unit : mm (typ) 7022A-006 Product & Package Information
  • Package : MCPH6
  • JEITA, JEDEC : SC-88, SC-70-6, SOT-363
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 MCPH6 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 654 123 654 12 3 TL MCH6602-TL-E FB LOT No. LOT No. 654 123

No.6445-2/6 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain to Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current I DSS V DS=30V, VGS=0V 1 μA Gate to Source Leakage Current I GSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=100μA 0.4 1.3 V Forward Transfer Admittance | yfs | VDS=10V, ID=80mA 0.15 0.22 S Static Drain to Source On-State Resistance RDS(on)1 I D=80mA, VGS=4V 2.9 3.7 Ω RDS(on)2 I D=40mA, VGS=2.5V 3.7 5.2 Ω RDS(on)3 I D=10mA, VGS=1.5V 6.4 12.8 Ω Input Capacitance Ciss VDS=10V, f=1MHz 7.0 pF Output Capacitance Coss 5.9 pF Reverse Transfer Capacitance Crss 2.3 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit. 19 ns Rise Time tr 65 ns Turn-OFF Delay Time td(off) 155 ns Fall Time tf 120 ns Total Gate Charge Qg VDS=10V, VGS=10V, ID=150mA 1.58 nC Gate to Source Charge Qgs 0.26 nC Gate to Drain “Miller” Charge Qgd 0.31 nC Diode Forward Voltage VSD IS=150mA, VGS=0V 0.87 1.2 V Switching Time Test Circuit

Ordering Information

Device Package Shipping memo MCH6602-TL-E MCPH6 3,000pcs./reel Pb-Free PW=10μs D.C.≤1% VIN VIN P.G 50Ω G S ID=80mA RL=187.5Ω VDD=15V VOUTD MCH6602

No.6445-3/6 RDS(on) -- IDRDS(on) -- VGS Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω Gate to Source V oltage, VGS -- V Drain Current, ID -- A RDS(on) -- Ta | yfs | -- ID RDS(on) -- ID Static Drain to Source On-State Resistance, RDS(on) -- Ω Drain Current, ID -- A RDS(on) -- ID Static Drain to Source On-State Resistance, RDS(on) -- Ω Drain Current, ID -- A Drain Current, ID -- A Static Drain to Source On-State Resistance, RDS(on) -- Ω Ambient Temperature, Ta -- °C Forward Transfer Admittance, | yfs | -- S --60 --40 --20 02 0 40 60 80 100 120 140 160 ID=40mA, V GS=2.5V ID=80mA, V GS=4.0V 0.01 0.01 0.1 23 5 7 23 5 0.1 1.0 VDS=10V 75°C Ta= --25 IT00035 IT00036 0.01 0.1 23 5 7 23 5 1.0 VGS=2.5V 1.0 0.001 0.01 23 5 7 23 5 100 VGS=1.5V Ta=75°C 25°C --25°C --25°C 25°C Ta=75°C IT00033 IT00034 25°C 789 1 0 Ta=25°C 0.01 0.1 23 5 7 23 5 1.0 25°C --25°C Ta=75°C IT00031 IT00032 VGS=4V ID=40mA 80mA ID -- VDS ID -- VGS Drain Current, ID -- A Gate to Source V oltage, VGS -- VDrain to Source V oltage, VDS -- V Drain Current, ID -- A 0.02 0.2 0.06 0.04 0.08 0.4 0.10 0.12 0.14 0.16 VGS=1.5V 2.0V 2.5V 4.0V 3.5V 3.0V 6.0V 0.5 1.0 1.5 2.0 0.15 0.10 0.05 0.30 0.25 0.20 2.5 3.0 VDS=10V Ta= --25 IT00029 IT00030

No.6445-4/6 1.0 0.1 0.01 0 20 40 60 100 120 140 1.0 0.6 0.4 0.2 0.8 160 IT01118 23 5 7 23 51.0 10 IT01117 ID=0.35A IDP=1.4A(PW≤10μs) 100ms DC operation 10ms 1ms Operation in this area is limited by RDS(on). 0 2 4 6 8 1 01 21 41 61 82 0 1.0 100 Ciss Coss Crss f=1MHz VDS=10V ID=150mA IT00039 IT00040 VGS -- Qg Total Gate Charge, Qg -- nC Gate to Source V oltage, VGS -- V PD -- TaA S O Drain to Source V oltage, VDS -- V Drain Current, ID -- A Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 1unit Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W When mounted on ceramic substrate (900mm 2✕0.8mm) 1unit Ciss, Coss, Crss -- VDS Drain to Source V oltage, VDS -- V Ciss, Coss, Crss -- pF SW Time -- ID Drain Current, ID -- A Switching Time, SW Time -- ns IS -- VSD Diode Forward V oltage, VSD -- V Source Current, IS -- A 0.01 0.1 1.0 VGS=0V --25 °C 25 Ta=75 0.01 0.123 5 7 2 1000 100 VDD=15V VGS=4V td(on) tr tf td(off) IT00037 IT00038

No.6445-5/6 Outline Drawing Land Pattern Example MCH6602-TL-E Mass (g) Unit 0.008 * For reference mm Unit: mm 0.65 0.65 0.4 2.1 0.6

PS No.6445-6/6 Note on usage : Since the MCH6602 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.