MCH6601-TL-E

MCH6601 ONSEMI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

Features

• Low ON-resistance
• Ultrahigh-speed switching
• 1.5V drive
• Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage V DSS - -30 V Gate to Source Voltage V GSS ±10 V Drain Current (DC) I D - -0.2 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% - -0.8 A Allowable Power Dissipation P D When mounted on ceramic substrate (900mm ×0.8mm) 1unit 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Package Dimensions unit : mm (typ) 7022A-006 Product & Package Information
• Package : MCPH6
• JEITA, JEDEC : SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 MCPH6 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 654 123 654 12 3 TL FA LOT No. LOT No. MCH6601-TL-E 65 4 12 3

No.6458-2/6 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain to Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -30 V Zero-Gate Voltage Drain Current I DSS V DS=- -30V, VGS=0V - -1 μA Gate to Source Leakage Current I GSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=- -10V, ID=- -100μA - -0.4 - -1.4 V Forward Transfer Admittance | yfs | VDS=- -10V, ID=- -50mA 80 110 mS Static Drain to Source On-State Resistance RDS(on)1 I D=- -50mA, VGS=- -4V 8 10.4 Ω RDS(on)2 I D=- -30mA, VGS=- -2.5V 11 15.4 Ω RDS(on)3 I D=- -1mA, VGS=- -1.5V 27 54 Ω Input Capacitance Ciss VDS=- -10V, f=1MHz 7.5 pF Output Capacitance Coss 5.7 pF Reverse Transfer Capacitance Crss 1.8 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit. 24 ns Rise Time tr 55 ns Turn-OFF Delay Time td(off) 120 ns Fall Time tf 130 ns Total Gate Charge Qg VDS=- -10V, VGS=- -10V, ID=- -100mA 1.43 nC Gate to Source Charge Qgs 0.18 nC Gate to Drain “Miller” Charge Qgd 0.25 nC Diode Forward Voltage VSD IS=- -100mA, VGS=0V - -0.83 - -1.2 V Switching Time Test Circuit

Ordering Information

Device Package Shipping memo MCH6601-TL-E MCPH6 3,000pcs./reel Pb-Free PW=10μs D.C.≤1% --4V VIN VIN P.G 50Ω G S ID= --50mA RL=300Ω VDD= --15V VOUTD MCH6601

No.6458-3/6 ID -- VDS ID -- VGS Drain Current, ID -- A Gate to Source V oltage, VGS -- VDrain to Source V oltage, VDS -- V Drain Current, ID -- A --0.01 --0.02 --0.03 --0.04 --0.06 --0.07 --0.08 --0.09 --0.10 --0.4 --0.05 VGS= --1.5V --3.5V --6.0V --2.0V --0.02 --0.04 --0.06 --0.08 --0.10 --0.12 --0.14 --0.16 --0.18 --0.20 VDS= --10V IT00077 IT00078 Ta= --25 °C 25°C RDS(on) -- IDRDS(on) -- VGS Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω Gate to Source V oltage, VGS -- V Drain Current, ID -- A RDS(on) -- Ta RDS(on) -- ID RDS(on) -- ID Static Drain to Source On-State Resistance, RDS(on) -- Ω Drain Current, ID -- A Static Drain to Source On-State Resistance, RDS(on) -- Ω Drain Current, ID -- A Static Drain to Source On-State Resistance, RDS(on) -- Ω Ambient Temperature, Ta -- °C Drain Current, I D -- A --0.01 1.0 --0.1 100 327532 VGS= --2.5V --0.0001 --0.001 1000 100 2323 5 7 VGS= --1.5V IT00081 IT00082 --25°C --25°C 25°C Ta=75°C Ta=75°C 25°C --0.01 0.01 --0.1 1.0 0.1 327532 VDS= --10V --60 --40 --20 20 40 80 100 120 140 160 ID= --30mA, V GS = --2.5V ID= --50mA, V GS= --4.0V IT00083 IT00084 Ta= --25°C 75°C --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 Ta=25°C --0.01 1.0 --0.123 5 7 23 100 VGS= --4V IT00079 IT00080 Ta=75°C 25°C--25°CID= --30mA --50mA 25°C | yfs | -- ID Forward Transfer Admittance, | yfs | -- S

No.6458-4/6 SW Time -- IDIS -- VSD Diode Forward V oltage, VSD -- V Source Current, IS -- A Drain Current, ID -- A Switching Time, SW Time -- ns --0.01 --0.1 VGS=0V IT00085 --25 Ta=75 --0.01 23 5 7 --0.1 1000 100 IT00086 VDD= --15V VGS= --4V tf tr td(off) td(on) Ciss, Coss, Crss -- VDS VGS -- Qg Drain to Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Total Gate Charge, Qg -- nC Gate to Source V oltage, VGS -- V PD -- TaA S O Drain to Source V oltage, VDS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W 20 40 0.2 0.4 0.6 0.8 1.0 60 80 100 120 140 160 IT01734 23 5 5 72 3 --0.01 --0.1 --1.0 --1.0 --10 Operation in this area is limited by RDS(on). DC operation IDP= --0.8A(PW≤10μs) ID= --0.2A 1ms 10ms 100ms IT01733 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 VDS= --10V ID= --100mA 1.0 --5 --10 --15 100 --20 --30 --25 f=1MHz IT00087 IT00088 Ciss Coss Crss Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 1unit When mount ed on ceramic substrate (900mm 2✕0.8mm) 1unit

No.6458-5/6 Outline Drawing Land Pattern Example MCH6601-TL-E Mass (g) Unit 0.008 * For reference mm Unit: mm 0.65 0.65 0.4 2.1 0.6

PS No.6458-6/6 Note on usage : Since the MCH6601 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.