MCH6541-TL-E

DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

Features

• Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting
• Ultrasmall package permitting applied sets to be small and slim Specifi cations ( ) : PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -30)40 V Collector-to-Emitter Voltage V CEO (- -)30 V Emitter-to-Base Voltage V EBO (- -)5 V Collector Current I C (- -)700 mA Collector Current (Pulse) I CP (- -)3 A Collector Dissipation P C When mounted on ceramic substrate (600mm ×0.8mm) 1unit 0.5 W Total Power Dissipation P T When mounted on ceramic substrate (600mm ×0.8mm) 0.55 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7022A-012 Product & Package Information
• Package : MCPH6
• JEITA, JEDEC : SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection EP LOT No. LOT No. TL 1 : Emitter1 (PNP TR) 2 : Base1 (PNP TR) 3 : Collector2 (NPN TR) 4 : Emitter2 (NPN TR) 5 : Base2 (NPN TR) 6 : Collector1 (PNP TR) MCPH6 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 654 123 654 12 3 MCH6541-TL-E

No.8949-2/8 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=(- -)30V, IE=0A (- -)100 nA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)100 nA DC Current Gain h FE VCE=(- -)2V, IC=(- -10)50mA (200)300 (500)800 Gain-Bandwidth Product f T VCE=(- -)2V, IC=(- -)50mA (520)540 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (4.7)3.3 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=(- -)200mA, IB=(- -)10mA (- -110)85 (- -220)190 mV Base-to-Emitter Saturation Voltage V BE(sat) I C=(- -)200mA, IB=(- -)10mA (- -)0.9 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -30)40 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)30 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)5 V Turn-On Time t on See specifi ed Test Circuit. 35 ns Storage Time t stg (125)255 ns Fall Time t f (25)40 ns Switching Time Test Circuit

Ordering Information

Device Package Shipping memo MCH6541-TL-E MCPH6 3,000pcs./reel Pb Free VR RB VCC=12VVBE= --5V + + 50Ω INPUT OUTPUT RL 220μF 470 μF PW=20μs IB1 D.C.≤1% IB2 IC=20IB1= --20IB2=300mA For PNP, the polarity is reversed.

No.8949-3/8 [PNP] [NPN] --200 --100 IC -- VCE IT05049 --400 --300 --600 --500 --700 IB=0μA --500μA --1mA --2mA --5mA --3mA --7mA --10mA --15mA--40mA --50mA --30mA --20mA--25mA Collector-to-Emitter V oltage, VCE -- mV Collector Current, IC -- mA 500 400 300 700 600 200 200 100 500 1000 800 900100 300 400 600 700 IC -- VCE IT05082 IB=0μA 200μA 400μA 1mA 2mA 3mA 5mA 7mA10mA 50mA 15mA 30mA 20mA Collector-to-Emitter V oltage, VCE -- mV Collector Current, IC -- mA [PNP] [NPN] [PNP] [NPN] IT05051 100 hFE -- IC --1.0 2 3 5 7 --10 2 3 5 7 2 3 5 7--100 --1000 1000 VCE= --2V Ta=75°C 25°C --25°C IT05054 --1.0 VCE(sat) -- IC 23 5 7 --10 23 5 7 23 5 7 --100 --1000 --1000 --100 --10 Ta=75 --25 25°C IC / IB=20 Collector Current, IC -- mA DC Current Gain, hFE Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV 1.0 10 100 100032 57 3 2 57 3 2 57 1000 100 hFE -- IC IT05084 VCE(sat) -- IC IT05085 Ta=75°C --25°C 25°C VCE=2V 1.0 100 1000 1.0 23 5 10 100 100072 3 5 72 3 5 7 75°C --25 °CTa=25 IC / IB=20 Collector Current, IC -- mA DC Current Gain, hFE Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV [PNP] [NPN] IT05050 IC -- VBE --200 --800 --500 --700 --400 --300 --600 --100 Ta=75 --25 VCE= --2V Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA 300 400 200 800 700 600 500 100 IC -- VBE IT05083 Ta=75 --25 VCE=2V Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA

No.8949-4/8 [PNP] [NPN] IT05055 VCE(sat) -- IC --1.0 23 5 7 --10 23 5 7 23 5 7 --100 --1000 --10 --1000 --100 Ta=75 --25°C 25°C IC / IB=50 Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV VCE(sat) -- IC IT05086 100 1000 1.0 23 5 10 100 10007 23 5 7 23 5 7 IC / IB=50 75°C --25°CTa=25 Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- mA [PNP] [NPN] [PNP] [NPN] IT05053 --1.0 0.1 Cob -- VCB --102 3 5 7 2 3 5 f=1MHz IT05052 --1.0 fT -- IC 2 3 57 2 3 57 2 3 57--10 --100 --1000 100 1000 VCE= --10V Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF IT05089 fT -- IC 100 1000 101.0 10023 5 723 5 7 100023 5 7 VCE=10V Cob -- VCB IT05088 1.0 1.0 10 23 5 23 5 7 f=1MHz Collector Current, IC -- mA Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Gain-Bandwidth Product, fT -- MHz [PNP] [NPN] --1.0 23 5 7 --10 2 3 57 2 3 57 --100 --1000 IT05056 VBE(sat) -- IC --1.0 --10 --0.1 Ta= --25°C 75°C 25°C IC / IB=20 Collector Current, IC -- mA Base-to-Emitter Saturation V oltage, VBE(sat) -- V VBE(sat) -- IC IT05087 1.0 0.1 1.0 23 5 10 100 10007 23 5 7 23 5 7 IC / IB=20 75°C Ta= --25°C 25°C Collector Current, IC -- mA Base-to-Emitter Saturation V oltage, VBE(sat) -- V

No.8949-5/8 [PNP] [NPN] f=1MHz --0.1 0.1 Base Current, IB -- mA Ron -- IB ON Resistance, Ron -- Ω IT06403 1.0 100 32 57 32 57--1.0 --10 OUTIN 1kΩ 1kΩ IB Base Current, IB -- mA Ron -- IB ON Resistance, Ron -- Ω f=1MHz 0.1 0.1 IT06793 1.0 32 57 32 571.0 10 OUTIN 1kΩ 1kΩ IB 0.6 0.1 0.2 0.3 0.4 0.5 0.55 0 20 40 60 80 100 120 140 160 IT10744 PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W 1unit Total dissipation [PNP/NPN] When mounted on ceramic substrate (600mm2✕0.8mm)

No.8949-6/8 Embossed Taping Specifi cation MCH6541-TL-E

No.8949-7/8 Outline Drawing Land Pattern Example MCH6541-TL-E Mass (g) Unit 0.008 * For reference mm Unit: mm 0.65 0.65 0.4 2.1 0.6

PS No.8949-8/8 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.