DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting
  • Ultrasmall package permitting applied sets to be small and slim
  • Small ON-resistance (Ron) Specifi cations ( ) : PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -15)20 V Collector-to-Emitter Voltage V CEO (- -12)15 V Emitter-to-Base Voltage V EBO (- -)5 V Collector Current I C (- -500)700 mA Collector Current (Pulse) I CP (- -1.0)1.4 A Collector Dissipation P C When mounted on ceramic substrate (600mm ×0.8mm) 0.5 W Total Power Dissipation P T When mounted on ceramic substrate (600mm ×0.8mm) 0.55 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7022A-012 Product & Package Information
  • Package : MCPH6
  • JEITA, JEDEC : SC-88, SC-70-6, SOT-363
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection EJ LOT No. LOT No. TL 1 : Emitter1 (PNP TR) 2 : Base1 (PNP TR) 3 : Collector2 (NPN TR) 4 : Emitter2 (NPN TR) 5 : Base2 (NPN TR) 6 : Collector1 (PNP TR) MCPH6 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 654 123 654 12 3 MCH6536-TL-E

No.7645-2/8 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=(- -12)15V, IE=0A (- -)100 nA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)100 nA DC Current Gain h FE VCE=(- -)2V, IC=(- -)10mA 300 (700)800 Gain-Bandwidth Product f T VCE=(- -)2V, IC=(- -)50mA (490)330 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (4)3.2 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=(- -)200mA, IB=(- -)10mA (- -)150 (- -)300 mV Base-to-Emitter Saturation Voltage V BE(sat) I C=(- -)200mA, IB=(- -)10mA (- -)0.9 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -15)20 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -12)15 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)5 V Turn-ON Time t on See specifi ed Test Circuit. 30 ns Storage Time t stg (57)77 ns Fall Time t f (30)40 ns Switching Time Test Circuit [PNP] [NPN]

Ordering Information

Device Package Shipping memo MCH6536-TL-E MCPH6 3,000pcs./reel Pb Free VR RB VCC= --5VVBE=5V ++50Ω INPUT OUTPUT RL 220μF 470 μF PW=20μs IB1 D.C.≤1% IB2 IC=20IB1= --20IB2= --400mA VR RB VCC=5VVBE= --5V + + 50Ω INPUT OUTPUT RL 220μF 470 μF PW=20μs IB1 D.C.≤1% IB2 IC=20IB1= --20IB2=500mA

No.7645-3/8 [PNP] [NPN] [PNP] [NPN] [PNP] [NPN] --200 --600 --300 --400 --500 --100 IC -- VBE IT05202 VCE= --2V --25 Ta=75 Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA --1.0 2 3 57 2 3 57 2 3 57--10 --100 100 1000 --1000 hFE -- IC IT05203 VCE= --2V --25°C Ta=75°C 25°C Collector Current, IC -- mA DC Current Gain, hFE --100 --10 --1000 VCE(sat) -- IC IT05204 --1.0 23 5 7 23 5 7 23 5 7--10 --100 --1000 IC / IB=20 Ta=75 25°C --25 Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV 100 200 300 400 600 500 700 800 IT05491 VCE=2V Ta=75 --25 IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA 100 1000 1.0 23 5 7 10 23 5 7 100 23 5 7 1000 IT05492 VCE=2V Ta=75°C --25°C 25°C hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE 1.0 23 5 7 10 23 5 7 100 23 5 7 1000 100 1000 IT05493 IC / IB=20 Ta=75 --25 25°C VCE(sat) -- IC Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV [PNP] [NPN] --200 --0.5 --20 --40 --60 --80 --100 --120 --140 --160 --180 --1.0 --2.0 --1.5 IC -- VCE IT05201 --1.0mA --0.7mA --0.5mA --0.6mA --0.4mA --0.3mA --0.2mA --0.1mA IB=0mA --0.9mA --0.8mA Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA IT05490 120 160 200 100 140 180 IB=0mA 0.1mA 0.2mA 0.3mA 0.4mA 0.5mA 0.6mA 0.7mA0.8mA 1.0mA 0.9mA IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA

No.7645-4/8 IT05206 --1.0 35 7 --1023 5 7 23 5 7 2--100 --1000 --10 --1.0 --0.1 VBE(sat) -- IC Ta= --25°C 25°C 75°C IC / IB=20 Collector Current, IC -- mA Base-to-Emitter Saturation V oltage, VBE(sat) -- V 1.0 Cob -- VCB IT05207 f=1MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF --1.0 53 100 1000 --1000--10027 5 327 5 327--10 fT -- IC IT05208 VCE= --2V Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz 1.0 23 5 7 10 23 5 7 100 23 5 7 1000 100 1000 10000 IT05495 Ta= --25°C 75°C 25°C IC / IB=20 VBE(sat) -- IC Collector Current, IC -- mA Base-to-Emitter Saturation V oltage, VBE(sat) -- mV 0.1 23 5 7 1.0 23 5 7 10 23 1.0 IT05497 f=1MHz Cob -- VCB Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V 1.0 23 5 7 10 23 5 7 100 23 5 7 1000 100 IT05496 VCE=2V fT -- IC Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz [PNP] [NPN] [PNP] [NPN] [PNP] [NPN] [PNP] [NPN] IT05205 --1.0 --100 --102 3 57 2 3 57 2 3 57 --100 --1000 --10 --1000 VCE(sat) -- IC IC / IB=50 Ta=75 25°C --25°C Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV 1.0 23 5 7 10 23 5 7 100 23 5 7 1000 100 1000 IT05494 IC / IB=50 Ta=75 --25 25°C VCE(sat) -- IC Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- mA

No.7645-5/8 Ambient Temperature, Ta -- °C PC -- Ta Collector Dissipation, PC -- W IT06387 0.7 0.6 0.5 0.55 0.4 0.3 0.2 0.1 4020 100 12060 80 140 160 Total Dissipation 1unit When mounted on ceramic substrate (600mm2✕0.8mm) Base Current, IB -- mA Ron -- IB ON-resistance, Ron -- Ω f=1MHz --0.1 IT06068 0.1 1.0 32 57 32 57--1.0 --10 OUTIN 1kΩ 1kΩ IB f=1MHz 0.1 0.1 IT06067 1.0 100 32 57 32 571.0 10 OUTIN 1kΩ 1kΩ IB Ron -- IB Base Current, IB -- mA ON-resistance, Ron -- Ω [PNP] [NPN]

No.7645-6/8 Embossed Taping Specifi cation MCH6536-TL-E

No.7645-7/8 Outline Drawing Land Pattern Example MCH6536-TL-E Mass (g) Unit 0.008 * For reference mm Unit: mm 0.65 0.65 0.4 2.1 0.6

PS No.7645-8/8 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.