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Document overview

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Technical content

Features

  • Low On-Resistance
  • 1.2V Drive
  • ESD Diode-Protected Gate
  • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage V DSS 20 V Gate to Source Voltage V GSS ±9V Drain Current (DC) I D 8A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP 32 A Power Dissipation When mounted on ceramic substrate (1200mm2 × 0.8mm) PD 1.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Ambient RθJA 83.3 °C/W When mounted on ceramic substrate (1200mm2 × 0.8mm) Power MOSFET 20V, 22mΩ, 8A, Single N-Channel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Electrical Connection N-Channel Packing Type : TL Marking VDSS R DS(on) Max I D Max 20V 22mΩ@ 4.5V 8A 28mΩ@ 2.5V 39mΩ@ 1.8V 124mΩ@ 1.2V 1,2,5,6 1:Drain 2:Drain 3:Gate 4:Source 5:Drain 6:Drain TL ZX LOT No. LOT No.

www.onsemi.com Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Value Unit min typ max Drain to Source Breakdown Voltage V( BR)DSS I D=1mA, VGS=0V 20 V Zero-Gate Voltage Drain Current I DSS V DS=20V, VGS=0V 1 μA Gate to Source Leakage Current I GSS V GS=±7.2V, VDS=0V ±10 μA Gate Threshold Voltage V GS(th) V DS=10V, ID=1mA 0.3 1.0 V Forward Transconductance g FS V DS=10V, ID=4A 7.7 S Static Drain to Source On-State Resistance RDS(on)1 I D=4A, VGS=4.5V 17 22 m Ω RDS(on)2 I D=2A, VGS=2.5V 20 28 m Ω RDS(on)3 I D=1A, VGS=1.8V 26 39 m Ω RDS(on)4 I D=0.5A, VGS=1.2V 62 124 m Ω Input Capacitance Ciss VDS=10V, f=1MHz 705 pF Output Capacitance Coss 150 pF Reverse Transfer Capacitance Crss 125 pF Turn-ON Delay Time td(on) See specified Test Circuit 6 ns Rise Time tr 47 ns Turn-OFF Delay Time td(off) 103 ns Fall Time tf 81 ns Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=8A 11.2 nC Gate to Source Charge Qgs 1.3 nC Gate to Drain “Miller” Charge Qgd 2.8 nC Forward Diode Voltage VSD I S=8A, VGS=0V 0.8 1.2 V Switching Time Test Circuit Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product per formance may not be indicated by the Electrical Characteristics if operated under different conditions. PW=10μs D.C.≤1% P.G 50Ω G S D ID=4A RL=2.5Ω VDD=10V VOUT VIN 4.5V VIN MCH6448

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www.onsemi.com ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A lis ting of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended tosupport or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject t oa l l applicable copyright laws and is not for resale in any manner. 0.65 0.65 0.4 2.1 0.6 Package Dimensions MCH6448-TL-H / MCH6448-TL-W MCPH6 CASE 419AS ISSUE O unit : mm 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Recommended Soldering Footprint

ORDERING INFORMATION

Device Package Shipping Note MCH6448-TL-H MCPH6 SC-88FL,SC-70-6,SOT-363 3,000 pcs. / Tape & Reel Pb-Free and Halogen Free MCH6448-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the MCH6448 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.