MCH6424 ONSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Low ON-resistance.
  • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 60 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D 3A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 12 A Allowable Power Dissipation P D Mounted on a ceramic board (900mm2✕0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 60 V Zero-Gate Voltage Drain Current I DSS VDS =60V, VGS =0V 1 µA Gate-to-Source Leakage Current I GSS VGS =±8V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 0.4 1.3 V Forward Transfer Admittance yfs VDS =10V, ID =1.5A 3.7 6.3 S R DS (on)1 I D =1.5A, VGS =4V 85 115 m ΩStatic Drain-to-Source On-State Resistance R DS (on)2 I D =1A, VGS =2.5V 92 135 m Ω Input Capacitance Ciss V DS =20V, f=1MHz 690 pF Output Capacitance Coss V DS =20V, f=1MHz 65 pF Reverse Transfer Capacitance Crss V DS =20V, f=1MHz 44 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 13 ns Rise Time t r See specified Test Circuit. 26.5 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 92 ns Fall Time t f See specified Test Circuit. 64 ns Marking : KY Continued on next page. MCH6424 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

© 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 www.onsemi.com Publication Order Number: MCH6424/D

Rev.0 I Page 2 of 4 I www.onsemi.com Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Total Gate Charge Qg V DS =30V, VGS =4V, ID =3A 8.2 nC Gate-to-Source Charge Qgs V DS =30V, VGS =4V, ID =3A 0.74 nC Gate-to-Drain “Miller” Charge Qgd V DS =30V, VGS =4V, ID =3A 2.7 nC Diode Forward Voltage V SD IS=3A, VGS =0V 0.8 1.2 V Package Dimensions Switching Time Test Circuit unit : mm 7022A-009 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : MCPH6 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 654 123 654 12 3 PW=10 µs D.C.≤1% P. G 50Ω G S D ID =1.5A R L=20Ω VDD =30V VOUT MCH6424 VIN VIN ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V R DS (on) -- VGS R DS (on) -- Ta Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Ambient Temperature, Ta -- °C IT10810 IT10811 IT10813 01234 8 567 IT10812 250 100 150 200 Ta= --2 5°C Ta=25°C V GS =1.0V V DS =10V 8.0V 2.0V 1.5V --60 200 100 150 250 --40 - -20 0 20 40 60 80 100 120 140 160 ID=1.0A, V GS=2.5V ID=1.5A, V GS=4.0V 4.0V 2.5V6.0V ID =1A 1.5A Drain Current, ID -- A

Rev.0 I Page 3 of 4 I www.onsemi.com IT10819 01 3 5 24 9 768 0.5 1.0 3.0 2.0 1.5 3.5 2.5 4.0 IT10818 100 IT10816 IT10814 0.1 1.0 23 5 2 7 1035 7 024 8 1 2 1 6 61 0 1 41 8 2 0 100 1000 IT10817 IT10815 0.01 0.1 1.0 0.1 1.0 0.01 23 5 723 5 7 23 57 2 3 571.00.10.01 10 100 V GS =0V --25 Ta= td(on) td(off) tf tr V DD =30V V GS =4V Ciss Coss Crss V DS =30V ID =3A ≤10µsIDP =12A ID =3A Operation in this area is limited by RDS (on). 100 µs 100ms 1ms10m sDC operation (Ta=25 °C) 0.01 0.1 0.123 5 7 2 1.035 7 2 1035 7 1.0 V DS =10V 75°CTa= --25 20 40 0.2 0.4 0.6 0.8 1.0 1.6 1.5 1.4 1.2 60 80 100 120 140 160 IT10820 25°C f=1MHz PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Mounted on a ceramic board (900mm 2✕0.8mm) VGS -- Qg SW Time -- ID Ciss, Coss, Crss -- VDS yfs -- ID IS -- VSD Drain Current, ID -- A Switching Time, SW Time -- ns Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm)

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