MCH6405 KEXIN | Alldatasheet

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Technical content

www.kexin.com.cn 1 MOSFET N-Channel Enhancement MOSFET ■ Features

  • VDS (V) = 20V
  • ID = 5.0 A
  • RDS(ON) ＜ 41mΩ (VGS = 4V)
  • RDS(ON) ＜ 54mΩ (VGS = 2.5V) +0.2 -0.1 1 2 3 456 Unit: mm 1.6 +0.2 -0.12.8 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.1 -0.1 SOT-23-6( ) +0.01 -0.01 +0.2 -0.1 0.4-0.1 +0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 Continuous Drain Current ID 5 Pulsed Drain Current (Note.1) IDP 20 Power Dissipation PD 1.5 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A Note.1 :PW ≤ 10 us, duty cycle ≤ 1% 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain MCH6405 (KCH6405)

www.kexin.com.cn2 MOSFET N-Channel Enhancement MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=1mA, VGS=0V 20 V Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 Gate-Body Leakage Current IGSS VDS=0V, VGS=±8V ±10 Cutoff Voltage VGS(off) VDS=10V , ID=1mA 0.5 1.3 V Forward Transfer Admittance |Yfs | VDS=10V , ID=3A 6.3 9 S RDS(On)1 VGS=4V, ID=3A 31 41 RDS(On)2 VGS=2.5V, ID=1.5A 38 54 Input Capacitance Ciss 570 Output Capacitance Coss 110 Reverse Transfer Capacitance Crss 80 Total Gate Charge Qg 7.6 Gate Source Charge Qgs 1.2 Gate Drain Charge Qgd 2.1 Turn-On DelayTime td(on) 13 Turn-On Rise Time tr 16 Turn-Off DelayTime td(off) 55 Turn-Off Fall Time tf 54 Maximum Body-Diode Continuous Current IS 5 A Diode Forward Voltage VSD IS=5A,VGS=0V 0.86 1.2 V pF nC ns See specified Test Circuit VGS=0V, VDS=10V, f=1MHz VGS=4V, VDS=10V, ID=5A μA Static Drain-Source On-Resistance mΩ ■ Marking Marking KE Switching Time Test Circuit PW=10µs D.C.″1% P.G 50Ω G S D ID=3A RL=3.33Ω VDD=10V VOUT VIN VIN MCH6405 (KCH6405)

www.kexin.com.cn 3 MOSF ET N-Channel Enhancement MOSFET ■ Typical Characterisitics --60 --40 --20 0 20 40 60 80 100 120 140 1600 2 4 6 8 10 0 0.2 100 VGS=1.0V 1.5V2.0V 2.5V10.0V VDS=10V C --25 C Ta=75 C 100 Ta=25 C 3.0AID=1.5A 4.0V ID=3.0A, VGS=4.0VID=1.5A, VGS=2.5V RDS(on) -- VGS ID -- VDS ID -- VGS RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Gate-to-Source Voltage, VGS -- V Drain-to-Source Voltage, VDS -- V Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V Drain Current, ID -- A Ambient Temperature, Ta -- Cb b bb b 0.01 0.1 1.0 0.11.0 2 3 5 7 102 3 5 7 1.0 VDS=10V 75 C Ta= --25 C VGS=0 --25 C C Ta=75 C 25 C yfs -- ID IF -- VSD Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward Voltage, VSD -- V Forward Current, IF -- A b b b b b b MCH6405 (KCH6405)

www.kexin.com.cn4 MOSF ET N-Channel Enhancement MOSFET ■ Typical Characterisitics 100 1000 1.0 td(on) td(off) tr tf 2 3 5 7 0.11.0 2 3 5 7 10 0 4 8 12 16 202 6 10 14 18 100 1000 10000 f=1MHz Ciss Coss Crss VDD=10V VGS=4V SW Time -- ID Ciss, Coss, Crss -- VDS Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source Voltage, VDS -- V Ciss, Coss, Crss -- pF VDS=10V ID=5A 0 1 2 3 4 5 6 7 8 1.0 2.0 3.0 4.0 0.5 1.5 2.5 3.5 0.01 1.0 0.1 102 3 5 71.02 3 5 72 3 5 7 0.10.01 2 3 IDP=20A ID=5A Operation in this area is limited by RDS(on). 100msDC operation 1ms 10ms <10us 100u s Ta=25 C Single pulse Mounted on a ceramic board(900mm2• 0.8mm) VGS -- Qg A S O Total Gate Charge, Qg -- nC Gate-to-Source Voltage, VGS -- V Drain-to-Source Voltage, VDS -- V Drain Current, ID -- A b 0 20 40 60 80 100 120 140 160 0.5 1.0 1.5 2.0 Mounted on a ceramic board(900mm 2•0.8mm) PD -- Ta Ambient Temperature, Ta -- C Allowable Power Dissipation, PD -- W b MCH6405 (KCH6405)