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Technical content

Features

  • Adoption of MBIT processes • Large current capacity
  • Low collector-to-emitter saturation voltage • High-speed switching
  • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm)
  • High allowable power dissipation Specifi cations ( ) : MCH6103 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -50)80 V Collector-to-Emitter Voltage VCES (- -50)80 V VCEO (- -)50 V Emitter-to-Base Voltage V EBO (- -)5 V Continued on next page. Package Dimensions unit : mm (typ) 7022A-007 Product & Package Information
  • Package : MCPH6
  • JEITA, JEDEC : SC-88, SC-70-6, SOT-363
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection TL 1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collecto r 6 : Collector MCPH6 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 654 123 654 12 3 MCH6103-TL-E MCH6203-TL-E AC LOT No. LOT No. MCH6103 CC LOT No. LOT No. MCH6203 1, 2, 5, 6 1, 2, 5, 6 MCH6203MCH6103

No.6611-2/8 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Current I C (- -)1.0 A Collector Current (Pulse) I CP (- -)3 A Base Current I B 200 mA Collector Dissipation P C When mounted on ceramic substrate (600mm ×0.8mm) 1.0 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=(- -)40V, IE=0A (- -)0.1 μA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)0.1 μA DC Current Gain h FE VCE=(- -)2V, IC=(- -)100mA 200 560 Gain-Bandwidth Product f T VCE=(- -)10V, IC=(- -)300mA 420 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (9)6 pF Collector-to-Emitter Saturation Voltage VCE(sat)2 I C=(- -)300mA, IB=(- -)6mA (- -145)90 (- -220)135 mV Base-to-Emitter Saturation Voltage V BE(sat) I C=(- -)500mA, IB=(- -)10mA (- -)0.81 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -50)80 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=(- -)100μA, RBE=0Ω (- -50)80 V V(BR)CEO IC=(- -)1mA, RBE=∞ (- -)50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)5 V Turn-On Time t on See specifi ed Test Circuit. (36)38 ns Storage Time t stg (173)332 ns Fall Time t f (28)40 ns Switching Time Test Circuit

Ordering Information

Device Package Shipping memo MCH6103-TL-E MCPH6 3,000pcs./reel Pb Free MCH6203-TL-E MCPH6 3,000pcs./reel VR RB VCC=25VVBE= --5V + + 50Ω INPUT OUTPUT RL 50Ω 100μF 470 μF PW=20μs IB1 D.C.≤1% IB2 IC=20IB1= --20IB2=500mA For PNP, the polarity is reversed. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

No.6611-3/8 --1.0 --0.8 --0.6 --0.4 --0.2 IC -- VCE --2mA --1mA --4mA --6mA --8mA --10mA --30mA --20mA --40mA IB=0 MCH6103 IT01890 0.4 0.6 0.8 1.0 0.2 0 200 400 600 800 1000 IC -- VCE 1mA 2mA 4mA 6mA 8mA 10mA 20mA30mA 40mA IB=0 IT01891 MCH6203 Collector-to-Emitter V oltage, VCE -- mV Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- mV Collector Current, IC -- A 1000 100 0.01 0.1 23 5 7 23 5 7 1.0 VCE(sat) -- IC IT01897 Ta=75 25°C--25°C MCH6203 IC / IB=20 --1000 --100 --10 VCE(sat) -- IC IT01896 Ta=75 25°C--25°C MCH6103 IC / IB=20 1000 100 hFE -- IC IT01894 Ta=75°C 25°C --25°C MCH6103 VCE= --2V 1000 100 0.01 325 0.173 25 7 1.0 hFE -- IC IT01895 Ta=75°C --25°C MCH6203 VCE=2V25°C --0.7 --0.8 --0.9 --1.0 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 IC -- VBE IT01892 Ta=75 --25 MCH6103 VCE= --2V 0.7 0.8 0.9 1.0 0.6 0.5 0.4 0.3 0.2 0.1 Ta=75 --25 MCH6203 VCE=2V IC -- VBE IT01893 Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V DC Current Gain, hFE Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A Collector Current, IC -- A Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV

No.6611-4/8 VCE(sat) -- IC IT01899 Ta=75°C 25°C--25°C MCH6203 IC / IB=50 --1000 --100 --10000 --10 1000 100 10000 VCE(sat) -- IC IT01898 Ta=75°C 25°C--25°C MCH6103 IC / IB=50 Collector Current, IC -- A Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV fT -- IC 100 1000 IT01905 MCH6203 VCE=10V fT -- IC 100 1000 IT01904 MCH6103 VCE= --10V Cob -- VCB 100 --1.023 5 7 23 5 23 5 7--0.1 --10 IT01902 MCH6103 f=1MHz 100 0.1 1.0 23 5 7 23 5 7 10 23 5 IT01903 MCH6203 f=1MHz Cob -- VCB VBE(sat) -- IC10000 1000 100 Ta= --25°C 25°C 75°C IT01901 VBE(sat) -- IC--10000 --1000 --100 Ta= --25°C 25°C75°C IT01900 MCH6203 IC / IB=50 MCH6103 IC / IB=50 Collector Current, IC -- A Collector Current, IC -- A Collector Current, I C -- A Gain-Bandwidth Product, fT -- MHz Gain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- mV Base-to-Emitter Saturation V oltage, VBE(sat) -- mV

No.6611-5/8 A S O ICP=3A IC=1A DC operation 100ms 10ms 1ms 500 μs 100 μs 1.4 1.0 0.8 0.6 0.4 0.2 1.2 2006 0 40 80 100 140 120 160 PC -- Ta MCH6103 / MCH6203 IT01907 1.0 0.1 0.01 1.00.1 25 37 1025 37 10025 37 IT01906 MCH6103 / MCH6203 Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W Ta=25°C Single pulse For PNP, minus sign is omitted. Mounted on a ceramic board (600mm 2✕0.8mm) Mounted on a ceramic board (600mm 2✕0.8mm)

No.6611-6/8 Embossed Taping Specifi cation MCH6103-TL-E, MCH6203-TL-E

No.6611-7/8 Outline Drawing Land Pattern Example MCH6103-TL-E, MCH6203-TL-E Mass (g) Unit 0.008 * For reference mm Unit: mm 0.65 0.65 0.4 2.1 0.6

PS No.6611-8/8 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.