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Technical content

Features

  • Adoption of MBIT processes • Large current capacity
  • Low collector-to-emitter saturation voltage • High-speed switching
  • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm)
  • High allowable power dissipation Specifi cations ( ) : MCH6102 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -30)40 V Collector-to-Emitter Voltage V CEO (- -)30 V Emitter-to-Base Voltage V EBO (- -)5 V Continued on next page. Package Dimensions unit : mm (typ) 7022A-007 1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collecto r 6 : Collector MCPH6 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 654 123 654 12 3 MCH6102-TL-E MCH6202-TL-E Product & Package Information
  • Package : MCPH6
  • JEITA, JEDEC : SC-88, SC-70-6, SOT-363
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection TL AB LOT No. LOT No. MCH6102 CB LOT No. LOT No. MCH6202 1, 2, 5, 6 1, 2, 5, 6 MCH6202MCH6102

No.6480-2/7 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Current I C (- -)1.5 A Collector Current (Pulse) I CP (- -)3 A Base Current I B (- -)300 mA Collector Dissipation P C When mounted on ceramic substrate (600mm ×0.8mm) 1.0 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=(- -)30V, IE=0A (- -)0.1 μA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)0.1 μA DC Current Gain h FE VCE=(- -)2V, IC=(- -)100mA 200 560 Gain-Bandwidth Product f T VCE=(- -)10V, IC=(- -)300mA (450)500 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (9)8 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=(- -)750mA, IB=(- -)15mA (- -250)150 (- -375)225 mV Base-to-Emitter Saturation Voltage V BE(sat) I C=(- -)750mA, IB=(- -)15mA (- -)0.85 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -30)40 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)30 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)5 V Turn-ON Time t on See specifi ed Test Circuit. (37)35 ns Storage Time t stg (115)205 ns Fall Time t f (26)32 ns Switching Time Test Circuit

Ordering Information

Device Package Shipping memo MCH6102-TL-E MCPH6 3,000pcs./reel Pb Free MCH6202-TL-E MCPH6 3,000pcs./reel VR RL=16Ω VCC=12VVBE= --5V IC=20IB1= --20IB2=750mA For PNP, the polarity is reversed. + + 50Ω INPUT OUTPUT RB 100μF 470 μF PW=20μs IB1 IB2 D.C.≤1% --2.0 --1.6 --1.2 --0.8 --0.4 IC -- VCE --4mA --2mA --6mA--8mA --10mA --15mA --20mA --30mA --40mA --50mA IB=0mA MCH6102 IT01872 0.8 1.2 1.6 2.0 0.4 0 200 400 600 800 1000 IC -- VCE 2mA 4mA 8mA 6mA 10mA 15mA 20mA 30mA 50mA 40mA IB=0mA IT01873 MCH6202 Collector-to-Emitter V oltage, VCE -- mV Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- mV Collector Current, IC -- A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

No.6480-3/7 1000 100 VCE(sat) -- IC IT01881 1000 100 VCE(sat) -- IC IT01879 --1000 --100 --10 VCE(sat) -- IC IT01878 --1000 --100 --10 VCE(sat) -- IC IT01880 1000 100 hFE -- IC IT01876 1000 100 0.01 325 0.173 23 257 1.0 0.01 325 0.173 23 257 1.0 0.01 325 0.173 23 257 1.0 hFE -- IC IT01877 DC Current Gain, hFE Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A Ta=75°C 25°C --25°C MCH6102 VCE= --2V Ta=75°C 25°C --25°C MCH6202 VCE=2V Ta=75 25°C --25 MCH6202 IC / IB=20 Ta=75 25°C --25°C MCH6102 IC / IB=20 Ta=75 25°C --25°C MCH6102 IC / IB=50 Ta=75 25°C --25°C MCH6202 IC / IB=50 Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV --1.4 --1.6 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 IC -- VBE IT01874 Ta=75 --25 MCH6102 VCE= --2V 1.4 1.6 1.2 1.0 0.8 0.6 0.4 0.2 Ta=75 --25 MCH6202 VCE=2V IC -- VBE IT01875 Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V

No.6480-4/7 A S O ICP=3A IC=1.5A 100ms DC operation 10ms 1ms 500 μs 100 μs 1.4 1.0 0.8 0.6 0.4 0.2 1.2 2006 0 40 80 100 140 120 160 PC -- Ta MCH6102 / MCH6202 IT01889 1.0 0.1 0.01 1.00.1 25 37 1025 37 10025 37 IT01888 fT -- IC 100 1000 IT01887 MCH6202 VCE=10V fT -- IC 100 1000 IT01886 MCH6102 VCE= --10V Cob -- VCB 100 --1.023 5 7 23 5 23 5 7--0.1 --10 IT01884 MCH6102 f=1MHz 100 0.1 1.0 2 3 57 2 3 57 10 23 5 IT01885 MCH6202 f=1MHz Cob -- VCB Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W MCH6102 / MCH6202 Ta=25°C Single pulse For PNP, minus sign is omitted. Mounted on a ceramic board (600mm2✕0.8mm) Mounted on a ceramic board (600mm 2✕0.8mm) Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz VBE(sat) -- IC10000 1000 100 IT01883 VBE(sat) -- IC--10000 --1000 --100 IT01882 25°C75°C MCH6202 IC / IB=50 Ta= --25°C Ta= --25°C 25°C75°C MCH6102 IC / IB=50 Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- mV Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- mV

No.6480-5/7 Embossed Taping Specifi cation MCH6102-TL-E, MCH6202-TL-E

No.6480-6/7 Outline Drawing Land Pattern Example MCH6102-TL-E, MCH6202-TL-E Mass (g) Unit 0.008 * For reference mm Unit: mm 0.65 0.65 0.4 2.1 0.6

PS No.6480-7/7 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.