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Technical content

Features

  • Composite type with 2 J-FET contained in a MCPH5 package currently in use, improving the mounting e f fi ciency greatly
  • The MCH5908 is formed with two chips, being equivalent to the 2SK3557, placed in one package Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSX 15 V Gate-to-Drain Voltage V GDS - -15 V Gate Current I G 10 mA Drain Current I D 50 mA Allowable Power Dissipation P D 1 unit 200 mW Total Power Dissipation P T 300 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7021A-009 Product & Package Information
  • Package : MCPH5
  • JEITA, JEDEC : SC-88A, SC-70-5, SOT-353
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection 1 : Drain1 2 : Source1/Source2 3 : Drain2 4 : Gate2 5 : Gate1 MCPH5 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 123 12 3 K LOT No. LOT No. R A N K 5 4 13 2 MCH5908H-TL-E MCH5908G-TL-E TL

No. A1218-2/6 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Gate-to-Drain Breakdown Voltage V (BR)GDS IG=- -10μA, VDS=0V - -15 V Gate-to-Source Leakage Current I GSS VGS=- -10V, VDS=0V - -1.0 nA Cutoff Voltage V GS(off) V DS=5V, ID=100μA - -0.3 - -0.7 - -1.5 V Zero-Gate Voltage Drain Current I DSS V DS=5V, VGS=0V 10.0* 32.0* mA Forward Transfer Admittance | yfs | VDS=5V, VGS=0V, f=1kHz 24 35 mS Input Capacitance Ciss VDS=5V, VGS=0V, f=1MHz 10.5 pF Reverse Transfer Capacitance Crss 3.5 pF Noise Figure NF V DS=5V, Rg=1kΩ, ID=1mA, f=1kHz 1.0 dB The specifi cations shown above are for each individual J-FET. * : The MCH5908 is classifi ed by IDSS as follows (unit : mA). Rank G H IDSS 10 to 20 16 to 32

Ordering Information

Device Package Shipping memo MCH5908H-TL-E MCPH5 3,000pcs./reel Pb Free MCH5908G-TL-E MCPH5 3,000pcs./reel ID -- VDS20 ITR02749 ID -- VDS --0.1V VGS=0V --0.2V --0.3V --0.4V --0.5V--0.6V--0.7V 2468 1 0 1 2 --0.1V --0.2V --0.3V --0.4V --0.5V --0.6V--0.7V ITR02750Drain-to-Source V oltage, VDS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- mA Drain Current, ID -- mA VGS=0V ID -- VGS IT04224 ID -- VGS ITR02752 20mAIDSS =30mA 15mA 10mA VDS=5V IDSS=15mA Ta=--25 VDS=5V Gate-to-Source V oltage, VGS -- V Drain Current, ID -- mA Gate-to-Source V oltage, VGS -- V Drain Current, ID -- mA

No. A1218-3/6 Crss -- VDS NF -- f ITR02758 0.01 2 0.1 1.0 10 100 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 VDS=5V ID=1mA Rg=1kΩ Drain-to-Source V oltage, VDS -- V Reverse Transfer Capacitance, Crss -- pF Frequency, f -- kHz Noise Figure, NF -- dB IT04227 Ciss -- VDSVGS(off) -- IDSS 7 10 23 5 1.0 VDS=5V ID=100μA Drain Current, IDSS -- mA Cutoff V oltage, VGS(off) -- V Drain-to-Source V oltage, VDS -- V Input Capacitance, Ciss -- pF ⏐yfs⏐ -- ID IT04225 ⏐yfs⏐ -- IDSS IT04226 3 1.0 10752 3 5 7 2 3 5 VDS=5V f=1kHz IDSS =15mA 30mA 7 10 23 5 100 VDS=5V VGS=0V f=1kHz Drain Current, ID -- mA Forward Transfer Admittance, ⏐yfs⏐ -- mS Drain Current, IDSS -- mA Forward Transfer Admittance, ⏐yfs⏐ -- mS IT13692 1.0 2 10 235 7 1.0 VGS=0V f=1MHz IT13691 23 5 7 23 1.0 10 VGS=0V f=1MHz NF -- Rg ITR02759 IT15408 PT, PD -- Ta 0.1 2 1.0 10 100 1000 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 VDS=5V ID=1mA f=1kHz Signal Source Resistance, Rg -- kΩ Noise Figure, NF -- dB Ambient Temperature, Ta -- °C Allowable Power Dissipation, PT, PD -- mW 0 20 40 60 80 100 120 140 160 350 300 250 200 150 100 PT Total power dissipation PD 1unit

No. A1218-4/6 Taping Specifi cation MCH5908H-TL-E, MCH5908G-TL-E

No. A1218-5/6 Outline Drawing Land Pattern Example MCH5908H-TL-E, MCH5908G-TL-E Mass (g) Unit 0.008 * For reference mm Unit: mm 0.65 0.65 0.4 2.1 0.6

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