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Composite type with a PNP / NPN transistor contained in one package, facilitating high-density mounting Ultrasmall package permitting applied sets to be small and slim. Typical Applications MOSFET gate drivers Lamp drivers Relay drivers Motor drivers SPECIFICATIONS ( ) : PNP ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1) Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (30) 40 V Collector-to-Emitter Voltage VCEO (30) 30 V Emitter-to Base Voltage VEBO () 5 V Collector Current IC () 700 mA Collector Current (Pulse) ICP PW 10s ( ) 3 A Collector Dissipation PC Mounted on a ceramic board (600mm2 x 0.8m) 0.5 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceede d, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2) Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=()30V, IE=0 () 100 nA Emitter Cutoff Current IEBO VEB=()4V, IC=0 () 100 nA DC Current Gain hFE VCE=()2V, IC=(10)50mA (200) 300 (500) 800 Gain-Bandwidth Product fT VCE=()2V, IC=()50mA (520) 540 MHz Output Capacitance Cob VCB=()10V, f=1MHz (4.7) 3.3 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=()200mA, IB=()10mA (110) 85 ( 220) 190 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=()200mA, IB=()10mA () 0.9 ( ) 1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=()10A, IE=0 (30) 40 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=()1mA, RBE= () 30 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=()10A, IC=0 () 5 V Continued on next page. PNP/NPN Bipolar Transistor ()30V, ()700mA, VCE(sat) ; (220)190mV (max) Electrical Connection Top view 1 : Base1 2 : Emitter Common 3 : Base2 4 : Collector2 5 : Collector1
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
www.onsemi.com Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Turn-ON Time ton See specified Test Circuit. 35 ns Storage Time tstg See specified Test Circuit. (125) 255 ns Fall Time tf See specified Test Circuit. (25) 40 ns Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit VR RB VCC=12VVBE= --5V + + 50Ω INPUT OUTPUT RL 220μF 470 μF PW=20μs IB1 D.C.≤1% IB2 20IB1= --20IB2=IC=300mA For PNP, minus sign is omitted. [PNP] [NPN] --200 --100 IC -- VCE IT05049 --400 --300 --600 --500 --700 IB=0 --500μA --1mA --2mA --5mA --3mA --7mA --10mA --15mA--40mA --50mA --30mA --20mA--25mA Collector-to-Emitter V oltage, VCE -- mV Collector Current, IC -- mA 500 400 300 700 600 200 200 100 500 1000 800 900100 300 400 600 700 IC -- VCE IT05082 IB=0 200μA 400μA 1mA 2mA 3mA 5mA 7mA10mA 50mA 15mA 30mA 20mA Collector-to-Emitter V oltage, VCE -- mV Collector Current, IC -- mA
www.onsemi.com [PNP] [NPN] [PNP] [NPN] [PNP] [NPN] IT05051 100 hFE -- IC --1.0 2 3 5 7 --10 2 3 5 7 2 3 5 7--100 --1000 1000 VCE= --2V Ta=75°C 25°C --25°C IT05054 --1.0 VCE(sat) -- IC 23 5 7 --10 23 5 7 23 5 7 --100 --1000 --1000 --100 --10 Ta=75 --25 25°C IC / IB=20 Collector Current, IC -- mA DC Current Gain, hFE Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV IT05055 VCE(sat) -- IC --1.0 23 5 7 --10 23 5 7 23 5 7 --100 --1000 --10 --1000 --100 Ta=75 --25°C 25°C IC / IB=50 Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV VCE(sat) -- IC IT05086 100 1000 1.0 23 5 10 100 10007 23 5 7 23 5 7 IC / IB=50 75°C --25°CTa= 25°C Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- mA 1.0 10 100 100032 57 3 2 57 3 2 57 1000 100 hFE -- IC IT05084 VCE(sat) -- IC IT05085 Ta=75°C --25°C 25°C VCE=2V 1.0 100 1000 1.0 23 5 10 100 10007 2 35 7 2 35 7 75°C --25 °CTa=25°C IC / IB=20 Collector Current, IC -- mA DC Current Gain, hFE Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV [PNP] [NPN] IT05050 IC -- VBE --200 --800 --500 --700 --400 --300 --600 --100 Ta=75 --25 VCE= --2V Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA 300 400 200 800 700 600 500 100 IC -- VBE IT05083 Ta=75 --25 VCE=2V Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA
www.onsemi.com [PNP] [NPN] [PNP] [NPN] [PNP] [NPN] IT05053 --1.0 0.1 Cob -- VCB --102 3 5 7 2 3 5 f=1MHz IT05052 --1.0 fT -- IC 23 5 7 23 5 7 23 5 7--10 --100 --1000 100 1000 VCE= --10V Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF f=1MHz --0.1 0.1 Base Current, IB -- mA Ron -- IB ON Resistance, Ron -- Ω IT06403 1.0 100 32 57 32 57--1.0 --10 OUTIN 1kΩ 1kΩ IB IT05089 fT -- IC 100 1000 101.0 10023 5 723 5 7 100023 5 7 VCE=10V Cob -- VCB IT05088 1.0 1.0 10 23 5 23 5 7 f=1MHz Collector Current, IC -- mA Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Gain-Bandwidth Product, fT -- MHz Base Current, IB -- mA Ron -- IB ON Resistance, Ron -- Ω f=1MHz 0.1 0.1 IT06793 1.0 32 57 32 571.0 10 OUTIN 1kΩ 1kΩ IB [PNP] [NPN] --1.0 23 5 7 --10 23 5 7 23 5 7 --100 --1000 IT05056 VBE(sat) -- IC --1.0 --10 --0.1 Ta= --25°C 75°C 25°C IC / IB=20 Collector Current, IC -- mA Base-to-Emitter Saturation V oltage, VBE(sat) -- V VBE(sat) -- IC IT05087 1.0 0.1 1.0 23 5 10 100 10007 23 5 7 23 5 7 IC / IB=20 75°C Ta= --25°C 25°C Collector Current, IC -- mA Base-to-Emitter Saturation V oltage, VBE(sat) -- V
www.onsemi.com PACKAGE DIMENSIONS unit : mm 1 : Base 1 2 : Emitter Common 3 : Base 2 4 : Collector 2 5 : Collector 1 IT08991 100 200 300 400 500 600 4020 100 12060 80 140 160 Mounted on a ceramic board (600mm 2✕0.8mm) IT08990 0.1 1.0 0.01 23 5 70.1 1.0 23 5 7 10 23 5 100ms DC operation 100 μs 500 μs 10ms 1ms Ambient Temperature, Ta -- °C PC -- Ta Collector Dissipation, PC -- mW Collector-to-Emitter V oltage, VCE -- V A S O Collector Current, IC -- A Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) For PNP, minus sign is omitted [PNP / NPN] ICP=3A IC=0.7A SC-88AFL / MCPH5 CASE 419AP ISSUE O to
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