MCH3333

MCH3333 ONSEMI | Alldatasheet

Document overview

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Technical content

Features

• Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS --30 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D --1.5 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% - -6.0 A Allowable Power Dissipation P D Mounted on a ceramic board (900mm2✕0.8mm) 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =--1mA, VGS =0 --30 V Zero-Gate Voltage Drain Current I DSS VDS =--30V, VGS =0 --1 µA Gate-to-Source Leakage Current I GSS VGS =±8V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =--10V, ID =--1mA --0.4 --1.4 V Forward Transfer Admittance yfs VDS =--10V, ID =--0.8A 1.38 2.3 S R DS (on)1 I D =--0.8A, VGS =--4V 215 280 m ΩStatic Drain-to-Source On-State Resistance R DS (on)2 I D =--0.4A, VGS =--2.5V 290 410 m Ω Input Capacitance Ciss V DS =--10V, f=1MHz 285 pF Output Capacitance Coss V DS =--10V, f=1MHz 52 pF Reverse Transfer Capacitance Crss V DS =--10V, f=1MHz 38 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 10 ns Rise Time t r See specified Test Circuit. 21 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 35 ns Fall Time t f See specified Test Circuit. 28 ns Marking : YJ Continued on next page. © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 www.onsemi.com Publication Order Number: MCH3333/D

Rev.0 I Page 2 of 4 I www.onsemi.com Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Total Gate Charge Qg V DS =--10V, VGS =--4V, ID =--1.5A 2.6 nC Gate-to-Source Charge Qgs V DS =--10V, VGS =--4V, ID =--1.5A 0.78 nC Gate-to-Drain “Miller” Charge Qgd V DS =--10V, VGS =--4V, ID =--1.5A 0.64 nC Diode Forward Voltage V SD IS=--1.5A, VGS =0 --0.89 --1.5 V Package Dimensions Switching Time Test Circuit unit : mm 2167A 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 0.250.25 0.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 3(Bottom view) (Top view) PW=10 µs D.C.≤1% P.G 50Ω G S D ID = --0.8A R L=18.75Ω VDD = --15V VOUT MCH3333 VIN --4V VIN 200 400 600 800 100 300 500 700 200 300 400 250 350 150 500 450 100 R DS (on) -- VGS IT07536 --0.6 --0.9 --1.2 --1.5 --0.2 --0.3 --0.6 --0.4 --2.0 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --0.2 --1.0--0.8--0.6 ID -- VDS IT07534 ID -- VGS IT07535 R DS (on) -- Ta IT07537 -- 6 0 -- 4 0 -- 2 0 0 2 0 406 08 0 100 120 140 160 Ta=75 25°C --25 V DS = --10V Ta=25°C --0.8A ID = --0.4A ID= --0.8A, V GS = --4.0V ID= --0.4A, V GS= --2.5V --1.5V --2.0V--4 .0V --2.5V --3.0V--3. V GS = --1.0V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C

Rev.0 I Page 3 of 4 I www.onsemi.com 100 1000 Ciss, Coss, Crss -- VDS IT07541 A S O --10 --1.0 --0.1 --0.01 23 5 7 23 5 7 23 5 7 23 5--0.01 --0.1 --1.0 --10 IT07543 100 SW Time -- ID IT07540 IT07539 IF -- VSD --3.0 --3.5 321 --4.0 --1.0 --0.5 --1.5 --2.0 --2.5 VGS -- Qg IT07542 IT07538 --0.001 0.1 --0.0123 5 7 --0.123 5 7 23 5 7 --1.0 0.01 1.0 yfs -- ID --0.4 --0.5 --0.001 --0.01 --10 --0.1 --1.0 20 40 60 80 100 120 0.6 0.8 0.9 0.4 0.2 1.0 140 160 PD -- Ta IT07544 Ta= --25 V DS = --10V 75°C25°C V GS =0 Ta=75 Ciss Coss Crss f=1MHz ID = --1.5A IDP = --6A Operation in this area is limited by RDS (on). DC operation (Ta=25 °C) 100ms 10ms 1ms100 µs <10µsV DS = --10V ID = --1.5A --25 tr td(on) tf td(off) V DD = --10V V GS = --4V Forward Transfer Admittance, yfs -- S Forward Current, IF -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Drain Current, ID -- A Diode Forward V oltage, VSD -- V Ta=25°C Single pulse Mounted on a ceramic board (900mm 2✕0.8mm) Mounted on a ceramic board (900mm 2✕0.8mm)

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