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Document overview
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Technical content
Features
- Adoption of MBIT processes • Large current capacity
- Low collector-to-emitter saturation voltage • High-speed switching
- Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm)
- High allowable power dissipation Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO - -15 V Collector-to-Emitter Voltage V CEO - -12 V Emitter-to-Base Voltage V EBO -- 5 V Collector Current I C -- 3 A Collector Current (Pulse) I CP -- 5 A Base Current I B - -600 mA Collector Dissipation P C When mounted on ceramic substrate (600mm ×0.8mm) 0.9 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7019A-004 Product & Package Information
- Package : MCPH3
- JEITA, JEDEC : SC-70, SOT-323
- Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection 1 : Base 2 : Emitter 3 : Collector MCPH3 0.250.250.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 0 to 0.02 AF LOT No. LOT No. TL MCH3106-TL-E
No.6861-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=- -12V, IE=0A - -0.1 μA Emitter Cutoff Current I EBO VEB=- -4V, IC=0A - -0.1 μA DC Current Gain h FE VCE=- -2V, IC=- -500mA 200 560 Gain-Bandwidth Product f T VCE=- -2V, IC=- -500mA 280 MHz Output Capacitance Cob V CB=- -10V, f=1MHz 36 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=- -1.5A, IB=- -30mA - - 110 --165 mV Base-to-Emitter Saturation Voltage V BE(sat) I C=- -1.5A, IB=- -30mA - -0.85 - -1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=- -10μA, IE=0A - - 15 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=- -1mA, RBE=∞ --12 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=- -10μA, IC=0A - - 5 V Turn-On Time t on See specifi ed Test Circuit. 30 ns Storage Time t stg 90 ns Fall Time t f 10 ns Switching Time Test Circuit
Ordering Information
Device Package Shipping memo MCH3106-TL-E MCPH3 3,000pcs./reel Pb Free VR 1kΩ VCC= --5VVBE=5V + +50Ω INPUT OUTPUT RL 220μF 470 μF PW=20μs IB1 D.C.≤1% IB2 IC=20IB2= --20IB1= --1.5A
No.6861-3/7 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 IC -- VCE --20 --40 --60 --80 --100 --120 --140 --160 --180 --200 IC -- VCE IT07987 IT07988 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 IC -- VBE 100 1000 hFE -- IC VCE= --2V VCE= --2V IT07989 IT07990 --16mA --12mA --10mA --8mA --6mA --4mA --2mA --14mA --0.7mA --0.6mA --0.5mA --0.4mA --0.3mA --0.2mA --0.1mA --0.8mA IB=0 I B=0 Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Collector Current, IC -- A DC Current Gain, hFE VCE(sat) -- IC VCE(sat) -- IC --1.0 VBE(sat) -- IC 100 Cob -- VCB f=1MHz --0.01 --0.1 IC / IB=20 IC / IB=50 --0.01 --0.1 --0.1 23 5 7 --1.0 23 5 7 --10 23 5 IC / IB=50 IT07991 IT07993 IT07992 IT07994 Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- V Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- V Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF
No.6861-4/7 100 fT -- IC VCE= --2V IT07995 IT07997 0.2 0.4 0.6 0.8 0.9 1.0 PC -- Ta 0 20 40 60 80 100 120 140 160 A S O IT07996 --0.1 --0.01 --1.0 --10 ICP= --5A IC= --3A 500 μs1ms 10ms 100msDC operation Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Ta=25°C Single pulse When mounted on ceramic substrate (600mm2✕0.8mm) When mounted on ceramic substrate (600mm2✕0.8mm)
No.6861-5/7 Taping Specifi cation MCH3106-TL-E
No.6861-6/7 Outline Drawing Land Pattern Example MCH3106-TL-E Mass (g) Unit 0.007 * For reference mm Unit: mm 0.65 0.65 0.4 2.1 0.6
PS No.6861-7/7 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.