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Technical content

Features

 Unmatched input and output allowing wide frequency range utilization  50 ohm native output impedance  Qualified up to a maximum of 65 VDD operation  Characterized from 30 to 65 V for extended power range  High breakdown voltage for enhanced reliability  Suitable for linear application with appropriate biasing  Integrated ESD protection with greater negative gate- -source voltage range for improved Class C operation  Included in NXP product longevity program with assured supply for a minimum of 15 years after launch Typical Applications  Industrial, scientific, medical (ISM) – Laser generation – Plasma generation – Particle accelerators – MRI, RF ablation and skin treatment – Industrial heating, welding and drying systems  Radio and VHF TV broadcast  Aerospace – HF communications – Radar  Mobile radio – HF and VHF communications – PMR base stations Document Number: MRFX035H Rev. 0, 12/2018 NXP Semiconductors Technical Data 1.8–512 MHz, 35 W CW, 65 V WIDEBAND RF POWER LDMOS TRANSISTOR MRFX035H NI- -360H- -2SB Note: The backside of the package is the source terminal for the transistor. (Top View) Drain21 Figure 1. Pin Connections

Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted)

  1. Continuous use at maximum temperature will affect MTTF.
  2. MTTF calculator available athttp://www.nxp.com/RF/calculators.

Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted)(continued)

230 CW > 65:1

65 No Device

Table 5. Ordering Information

Table 6. 1.8–54 MHz HF Broadband Performance(In NXP Reference Circuit, 50 ohm system)

Figure 5. MRFX035H BroadbandReference Circuit Component Layout — 1.8–54 MHz Table 7. MRFX035H Broadband Reference Circuit Component Designations and Values — 1.8–54 MHz

Figure 6. Power Gain, Drain Efficiency and CW Output Power Figure 7. CW Output Power versus Gate- -Source Figure 8. CW Output Power versus Input Power Figure 9. Power Gain and Drain Efficiency versus

7.2 MHz

54 MHz

1.8 MHz

Figure 14. Broadband Series Equivalent Source and Load Impedance — 1.8–54 MHz

Figure 15. MRFX035H Production Test Fixture Component Layout — 230 MHz Table 8. MRFX035H Production Test Fixture Component Designations and Values — 230 MHz

Figure 16. Output Power versus Gate- -Source Figure 17. Output Power versus Input Power Figure 18. Power Gain and Drain Efficiency Figure 19. Power Gain and Drain Efficiency Figure 20. Power Gain versus Output Power

55 V 60 V 65 V

230 MHz PRODUCTION TEST FIXTURE

Figure 21. Series Equivalent Source and Load Impedance — 230 MHz

PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  Electromigration MTTF Calculator  RF High Power Model  .s2p File Development Tools  Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go tohttp://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description 0 Dec. 2018  Initial release of data sheet

How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Document Number: MRFX035H Rev. 0, 12/2018 Information in this document is provided solely to enablesystem and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particularpurpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, andspecifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address:nxp.com/ SalesTermsandConditions. NXP and the NXP logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2018 NXP B.V.