MCA002 TTELEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 4
Technical content
4 COMMON SOURCE N-CHAN MOSFETS,
4 COMMON SOURCE P-CHAN MOSFETS
Ceramic surface mount package Designed for high reliability applications Screening Options Available Semelab Limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissio ns discovered in its use. Semelab encourages custom ers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4J B Document Number: Issue: Page: 7173 1 of 4 Telephone: Fax: +44 (0) 1455 556565 +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise stated) N-Channel P-Channel VDS Drain – Source Voltage +60V -60V VGS Gate – Source Voltage ±30V ±30V ID Continuous Drain Current, Per Device 200mA 200mA PD Power Dissipation, Per Device 0.5W 0.5W TJ Junction Temperature Range -55 to +150°C Tstg Storage Temperature Range -55 to +150°C THERMAL PROPERTIES Symbols Parameters Max. Units RθJC Thermal Resistance, Junction To Case 30 °C/W RθJA Thermal Resistance, Junction To Ambient 60 °C/W
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4 JB Telephone: Fax: +44 (0) 1455 556565 +44 (0) 1455 552612 Email: sales@semelab -tt.com Website: http://www.semelab -tt.com Document Number: Issue: Page: 7173 2 of 4
ELECTRICAL CHARACTERISTICS
N-Channel, Per Device (T A = 25°C unless otherwise stated) Symbols Parameters Test Conditions Min. Typ Max. Un its V(BR)DSS Drain – Source Breakdown Voltage VGS = 0V I D = 100 µA 60 100 V VGS(th) Gate Threshold Voltage VDS = V GS I D = 1.0mA 0.8 1.6 2.5 IGSS Gate Body Leakage VDS = 0V V GS = ±20V ±1.0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS = 48V V GS = 0V 0.02 1.0 µA TJ = 125°C (3) 1.0 100 ID(ON) On-State Drain Current (2) VDS = 10V V GS = 10V 750 1000 mA RDS(ON) Drain – SourceOn – Resistance (1) VGS = 4.5V I D = 75mA 4 7.5 Ω VGS = 10V I D = 0.2A 2.5 5 TJ = 125°C (3) 4.4 gfs Forward Transconductance (1)(3) VDS = 10V I D = 0.5A 230 mS gos Common Source Output Conductance (1)(3) VDS = 5V I D = 50mA 500 µS DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = 25V f = 1Mhz VGS = 0V pF Coss Output Capacitance 13 Crss Reverse Transfer Capacitance 4 td(on) Turn-On Delay Time VDD = 25V RL = 50Ω ID = 0.5A VGEN = 10V RGEN = 25Ω nS td(off) Turn-Off Delay Time 7 Notes (1) Pulse Width ≤ 380us, δ ≤ 2% (2) Pulse Width Limited By Maximum Junction Temperature (3) Not a Production Test, By Design Only
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4 JB Telephone: Fax: +44 (0) 1455 556565 +44 (0) 1455 552612 Email: sales@semelab -tt.com Website: http://www.semelab -tt.com Document Number: Issue: Page: 7173 3 of 4 P-Channel, Per Device (T A = 25°C unless otherwise stated) Symbols Parameters Test Conditions Min. Typ Max. Un its V(BR)DSS Drain – Source Breakdown Voltage VGS = 0V I D = -10 µA -60 -75 V VGS(th) Gate Threshold Voltage VDS = V GS I D = -1.0mA -1.0 -2.5 -3.5 IGSS Gate Body Leakage VDS = 0V V GS = ±20V ±1.0 ±100 nA TJ = 125°C (3) ±5 ±500 IDSS Zero Gate Voltage Drain Current VDS = -48V V GS = 0V -0.02 -1.0 µA TJ = 125°C (3) -0.2 -100 ID(ON) On-State Drain Current (2) VDS = -10V V GS = -4.5V -50 -80 mA RDS(ON) Drain – SourceOn – Resistance (1) VGS = -4.5V I D = -25mA 11 25 Ω VGS = -4.5V I D = -0.1A 8 25 VGS = -10V I D = -0.2A 6 10 TJ = 125°C (3) gfs Forward Transconductance (1)(3) VDS = -10V I D = -0.1A 90 mS gos Common Source Output Conductance (1)(3) VDS = -10V I D = -0.1A 400 µS DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = -25V f = 1Mhz VGS = 0V pF Coss Output Capacitance 22 Crss Reverse Transfer Capacitance 3 td(on) Turn-On Delay Time VDD = -25V RL = 50Ω ID = -0.5A VGEN = -10V RGEN = 25Ω nS tr Rise Time 5 td(off) Turn-Off Delay Time 5 tf Fall Time 4 Notes (1) Pulse Width ≤ 380us, δ ≤ 2% (2) Pulse Width Limited By Maximum Junction Temperature (3) Not a Production Test, By Design Only
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4 JB Telephone: Fax: +44 (0) 1455 556565 +44 (0) 1455 552612 Email: sales@semelab -tt.com Website: http://www.semelab -tt.com Document Number: Issue: Page: 7173 4 of 4 MECHANICAL DATA Dimensions in mm (inches) LCC6 Underside View N-CHANNEL DEVICES : 1 -4 P-CHANNEL DEVICES : 5 -8 Pin Number Connection 1 D3 2 G3 3 G4 4 D4