MBW100T120PHF MGCHIP | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 4
Technical content
Features
1200V Trench + Field stop technology Low switching losses Positive temperature coefficient High Input Impedance
Applications
High power & High Ruggedness drives Motor driver General Descriptions This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides low V CE(SAT), high switching performance and excellent quality. C E G
Jan. 2021. Revision 1.3 Magnachip Semiconductor Ltd. 2 MBW100T120PHF 1200V Field Stop High Ruggedness version IGBT Absolute Maximum Ratings Parameter Symbol Rating Unit Collector-emitter voltage Tvj =25 oC VCE 1200 V Gate-emitter voltage VGE ±20 V DC collector current, limited by Tvj max IC (Note 2) A Pulsed collector current, tp limited by Tvj max (Note 3) IC, Pulse 300 A Short circuit data VGE=15V, VCC=800V, Tvj=150 oC(Note 3) tsc 10 μs Operating Junction temperature Tvj -40~175 oC Note 1: nominal collector current at TC=100 °C, not subject to production test-verified by design/characterization Note 2: depending on thermal properties of assembly Note 3: not subject to production test - verified by design/characterization Static Characteristics (Tvj =25oC unless otherwise specified and Tested on wafer) Parameter Symbol Test Condition Min. Typ. Max. Unit. Collector-emitter breakdown voltage BVCES IC = 5mA, VGE = 0V 1200 - - V Gate-emitter threshold voltage VGE(th) IC = 4mA, VCE = VGE 4.8 - 6.8 V Zero gate voltage collector current ICES VCE = 1200V, VGE = 0V - - 10 uA Gate-emitter leakage current, Forward IGES(F) VGE = 20V, VCE = 0V - - 120 nA Gate-emitter leakage current, Reverse IGES(R) VGE = -20V, VCE = 0V - - 120 nA Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC = 100A 1.40 1.70 2.10 V Integrated gate resistor rG 5.0 Ω Electrical Characteristics (not subject to production test - verified by design / characterization) Parameter Symbol Test Condition Min. Typ. Max. Unit. Collector-emitter saturation voltage VCE(sat) IC = 100A, VGE = 15V, Tvj = 150°C 2.10 V Input capacity Cies f = 1MHz, Tvj = 25°C, VCE=25V 5700 pF Reverse transfer capacitance Cres 360 pF
Jan. 2021. Revision 1.3 Magnachip Semiconductor Ltd. 3 MBW100T120PHF 1200V Field Stop High Ruggedness version IGBT Chip Outline 4.24 10.390 10.490 9.588 G 9.488 3.798 3.798 Unit [mm] 4.24 0.476 0.47 1.578 0.840 E E E E
Jan. 2021. Revision 1.3 Magnachip Semiconductor Ltd. 4 MBW100T120PHF 1200V Field Stop High Ruggedness version IGBT DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magnachip does not consider responsibility for use of any c ircuitry other than circuitry entirely included in a Magnachip product. is a registered trademark of Magnachip Semiconductor Ltd.