MBV109T1 ONSEMI | Alldatasheet

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Technical content

Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods.

  • High Q with Guaranteed Minimum Values at VHF Frequencies
  • Controlled and Uniform Tuning Ratio
  • Available in Surface Mount Package MAXIMUM RATINGS Rating Symbol MBV109T1 MMBV109LT1 MV209 Unit Reverse Voltage VR 30 Vdc Forward Current IF 200 mAdc Forward Power Dissipation @ T A = 25°C Derate above 25°C PD 280 2.8 200 2.0 200 1.6 mW mW/ °C Junction Temperature TJ +125 °C Storage Temperature Range Tstg –55 to +150 °C DEVICE MARKING MBV109T1 = J4A, MMBV109LT1 = M4A, MV209 = MV209 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 µAdc) V(BR)R 30 — — Vdc Reverse Voltage Leakage Current (VR =

25 Vdc)

IR — — 0.1 µAdc Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) TC C — 300 — ppm/° C C t, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz C R , Capacitance Ratio C 3/C25 f = 1.0 MHz (Note Device Min Nom Max Min Min Max MBV109T1, MMBV109LT1, MV209 26 29 32 200 5.0 6.5 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc. MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. ON Semiconductor  Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 1

1 Publication Order Number:

26–32 pF VOLTAGE VARIABLE CAPACITANCE DIODES CASE 419–04, STYLE 3 SC–70/SOT–323 * ON Semiconductor Preferred Devices CASE 318–08, STYLE 6 SOT–23 (TO–236AB) CASE 182–06, STYLE 1 TO–92 (TO–226AC) Cathode Anode Cathode Anode Cathode Anode SC–70/SOT–323 SOT–23 TO–92

http://onsemi.com MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. SOT–23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 mm inches 0.035 0.9 0.075 0.7 1.9 0.028 0.65 0.025 0.65 0.025 SC–70/SOT–323 POWER DISSIPATION FOR A SURFACE MOUNT DEVICE The power dissipation for a surface mount device is a function of the pad size. These can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, R θJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA . Using the values provided on the data sheet, PD can be calculated as follows. PD = TJ(max) – TA R θJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature T A of 25°C, one can calculate the power dissipation of the device. For example, for a SOT–23 device, P D is calculated as follows. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the surface mount packages. One is to increase the area of the drain/collector pad. By increasing the area of the drain/collector pad, the power dissipation can be increased. Although the power dissipation can almost be doubled with this method, area is taken up on the printed circuit board which can defeat the purpose of using surface mount technology. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad . Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected.

  • Always preheat the device.
  • The delta temperature between the preheat and soldering should be 100°C or less.*
  • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C.
  • The soldering temperature and time should not exceed 260°C for more than 10 seconds.
  • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less.
  • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress.
  • Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.

or stainless steel with a typical thickness of 0.008 inches. board, i.e., a 1:1 registration. used, and the type of board or substrate material being used. Tin Lead Silver with a melting point between 177–189°C.

40 TO 80 SECONDS

Figure 5. Typical Solder Heating Profile

http://onsemi.com PACKAGE DIMENSIONS CASE 419–04 ISSUE L SC–70 (SOT–323) C N A L D G S B H J K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 C 0.032 0.040 0.80 1.00 D 0.012 0.016 0.30 0.40 G 0.047 0.055 1.20 1.40 H 0.000 0.004 0.00 0.10 J 0.004 0.010 0.10 0.25 K 0.017 REF 0.425 REF L 0.026 BSC 0.650 BSC N 0.028 REF 0.700 REF S 0.079 0.095 2.00 2.40 0.05 (0.002) STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR CASE 318–08 ISSUE AF SOT–23 (TO–236AB) D JK L A C B S H GV 1 2 DIM A MIN MAX MIN MAX MILLIMETERS 0.1102 0.1197 2.80 3.04 INCHES B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR

http://onsemi.com PACKAGE DIMENSIONS CASE 182–06 ISSUE L TO–92 (TO–226AC) ÉÉ ÉÉ NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. A L K B R P D H G XX SEATING PLANE V N C N SECTION X–X D J DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.175 0.205 4.45 5.21 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.050 BSC 1.27 BSC H 0.100 BSC 2.54 BSC J 0.014 0.016 0.36 0.41 N 0.080 0.105 2.03 2.66 STYLE 1: PIN 1. ANODE 2. CATHODE

http://onsemi.com Notes

http://onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–spanish@hibbertco.com Toll–Free from Mexico: Dial 01–800–288–2872 for Access – then Dial 866–297–9322 ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone : 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–asia@hibbertco.com JAPAN : ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone : 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. MBV109T1/D Thermal Clad is a trademark of the Bergquist Company NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone : (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET) Email: ONlit–german@hibbertco.com French Phone : (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET) Email: ONlit–french@hibbertco.com English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, UK, Ireland