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WEJ ELECTRONIC CO.,LTD M B T A 0 6 L T 1 NPN EPITAXIAL SILICON TRANSISTOR * High Collector-Emitter Voltage:Vcbo=80V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW(Ta=25 ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 80 V Collector-Emitter Voltage Vceo 80 V Emitter-Base Voltage Veb 4 V Collector Current Ic 500 mA Collector Dissipation Ta=25 * PD 225 mW Junction Temperature Tj 150 Storage Temperature Tstg -55-150 1.BASE 2.EMITTE R 3.COL LECTOR 1.3 2.4 2.9 1.9 0.95 0.95 0.4 Unit:mm ELECTRICAL CHARACTERISTICS at Ta=25 Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Voltage BVcbo 80 V Ic=100uA Ie= 0 Collector-Emitter Breakdo wn Voltage# BVceo 80 V Ic= 1mA Ib=0 Emitter-Base Breakdown Voltage BVebo 4 V Ie= 100uA Ic= 0 Collector Cutoff Current Icbo 100 nA Vcb= 80V Ie= 0 Collector Cutoff Current Ices 100 nA Vce= 60V Ib= 0 DC Current Gain Hfe1 80 250 Vce=1V Ic=10mA DC Current Gain Hfe2 80 Vce=1V Ic=100mA Collector-Emitter Saturation Voltage Vce(sat) 0.25 V Ic=100mA Ib=10mA Base-Emitter On Voltage Vbe(on) 1.2 V Ic=100mA Vce=1V Current Gain-Bandwidth Product fT 100 MHz Vce=2V Ic=10mA f=100MHz * Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 # Pulse Test : Pulse Width 300uS,Duty cycle DEVICE MARKING: MMBT A06LT1=1G Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS