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WEJ ELECTRONIC CO.,LTD MBT6517LT1 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector Dissipation: Pc=225mW(Ta=25 * Collector-Emitter Voltage :Vceo=350V ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Collector-Base Voltage Vcbo 350 V Collector-Emitter Voltage Vceo 350 V Emitter-Base Voltage Vebo 6 V Collector Current Ic 500 mA Base Current Ib 250 mA Collector Dissipation Ta=25 * PD 225 mW Junction Temperature Tj 150 Storage Temperature Tstg -55-150 1.BA SE 2.EMITTE R 3.COLLE CTOR 1.3 2.4 2.9 1.9 0.95 0.95 0.4 Unit:mm ELECTRICAL CHARACTERISTICS at Ta=25 Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Voltage BVcbo 350 V Ic=100uA Ie= 0 Collector-Emitter Breakdo wn Voltage# Bvceo 350 V Ic= 1mA Ib=0 Emitter-Base Breakdown Voltage BVebo 6 V Ie= 10uA Ic= 0 Collector Cutoff Current Icbo 50 nA Vcb= 250V Ie= 0 Emitter Cutoff Current Iebo 50 nA Veb=5V Ic=0 DC Current Gain Hfe1 20 Vce=10V Ic=1mA DC Current Gain Hfe2 30 Vce=10V Ic=10mA DC Current Gain Hfe3 30 200 Vce=10V Ic=30mA DC Current Gain Hfe4 20 200 Vce=10V Ic=50mA DC Current Gain Hfe5 15 Vce=10V Ic=100mA Collector-Emitter Saturation Voltage Vce(sat) 0.3 V Ic=10mA Ib=1mA Collector-Emitter Saturation Voltage Vce(sat) 0.5 V Ic=30mA Ib=3mA Base-Emitter Saturation Voltage Vbe(sat) 0.75 V Ic=10mA Ib=1mA Base-Emitter Saturation Voltage Vbe(sat) 0.9 V Ic=30mA Ib=3mA Base-Emitter On Voltage Vbe(on) 2 V Vce=10V Ic=100mA Current Gain Bandwidth Product fT 40 200 MHz Vce=20V Ic=10mA F=20MHz Collect Base Capacitance Ccb 6 PF Vcb=20V Ie=0 f=1MHz Emitter Base Capacitance Ceb 80 PF Veb=0.5V f=1.00MHz * Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 # Pulse Test : Pulse Width 300uS,Duty cycle DEVICE MARKING: MMBT 6517LT=1Z Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS