MBT6517 AITSEMI | Alldatasheet

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AiT Semiconductor Inc. www.ait-ic.com MBT6517 GENERAL PURPOSE TRANSISTORS NPN SILICON REV1.0 - JUN 2015 RELEASED - - 1 - DESCRIPTION FEATURES The MBT6517 is available in SOT-23 package  Available in SOT-23 package ORDERING INFORMATION PIN DESCRIPTION Package Type Part Number SOT-23 MBT6517 Note SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products 1. BASE 2. EMITTER 3. COLLECTOR

AiT Semiconductor Inc. www.ait-ic.com MBT6517 GENERAL PURPOSE TRANSISTORS NPN SILICON REV1.0 - JUN 2015 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS VCEO, Collector–Emitter Voltage 350Vdc VCBO, Collector–Base Voltage 350Vdc VEBO, Emitter–Base Voltage 5.0Vdc IB, Base Current 250mAdc IC, Collector Current — Continuous 500mAdc Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS Parameter Symbol Min. Max. Unit Total Device Dissipation FR– 5 Board, NOTE1 TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 556 °C/W Total Device Dissipation Alumina Substrate, NOTE2 TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 417 °C/W Junction and Storage Temperature TJ , TSTG –55 +150 °C NOTE1: FR–5 = 1.0 x 0.75 x 0.062 in.

AiT Semiconductor Inc. www.ait-ic.com MBT6517 GENERAL PURPOSE TRANSISTORS NPN SILICON REV1.0 - JUN 2015 RELEASED - - 3 -

ELECTRICAL CHARACTERISTICS

TA = 25°C, unless otherwise noted. Parameter Symbol Conditions Min. Max. Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1.0mAdc 350 - Vdc Collector–Base Breakdown Voltage V(BR)CBO IC = 100μAdc 350 - Vdc Emitter–Base Breakdown Voltage V(BR)EBO IE = 10μAdc 6.0 - Vdc Collector Cutoff Current ICBO VCB = 250Vdc - 50 nAdc Emitter Cutoff Current IEBO VEB = 5.0Vdc - 50 nAdc ON CHARACTERISTICS DC Current Gain hFE IC = 1.0mAdc, VCE = 10Vdc IC = 10mAdc, VCE = 10Vdc IC = 30mAdc, VCE = 10Vdc IC = 50mAdc, VCE = 10Vdc IC = 100mAdc, VCE = 10Vdc 200 200 Collector–Emitter Saturation VoltageNOTE3 VCE(sat) IC = 10mAdc, IB = 1.0mAdc IC = 20mAdc, IB = 2.0mAdc IC = 30mAdc, IB = 3.0mAdc IC = 50mAdc, IB = 5.0mAdc 0.30 0.35 0.50 1.0 Vdc Base – Emitter Saturation Voltage VBE(sat) IC = 10mAdc, IB = 1.0mAdc IC = 20mAdc, IB = 2.0mAdc IC = 30mAdc, IB = 3.0mAdc 0.75 0.85 0.90 Vdc Base–Emitter On Voltage V BE(on) IC = 100mAdc, VCE = 10Vdc - 2.0 Vdc SMALL–SIGNAL CHARACTERISTICS Current Gain–Bandwidth Product fT VCE = 20Vdc, IC = 10mAdc, f = 20 MHz 40 200 MHz Collector –Base Capacitance Ccb VCB = 20Vdc, f = 1.0 MHz - 6.0 pF Emitter –Base Capacitance Ceb VEB=0.5Vdc, f = 1.0 MHz - 80 pF NOTE3: Pulse Test: Pulse Width = 300μs, Duty Cycle = 2.0%.

AiT Semiconductor Inc. www.ait-ic.com MBT6517 GENERAL PURPOSE TRANSISTORS NPN SILICON REV1.0 - JUN 2015 RELEASED - - 6 - Design Note: Use of Transient Thermal Resistance Data

AiT Semiconductor Inc. www.ait-ic.com MBT6517 GENERAL PURPOSE TRANSISTORS NPN SILICON REV1.0 - JUN 2015 RELEASED - - 7 -

PACKAGE INFORMATION

Dimension in SOT-23 (Unit: mm) DIM MILLIMETERS INCHES MIN MAX MIN MAX A 2.80 3.04 0.1102 0.1197 B 1.20 1.40 0.0472 0.0551 C 0.89 1.11 0.0350 0.0440 D 0.37 0.50 0.0150 0.0200 G 1.78 2.04 0.0701 0.0807 H 0.013 0.100 0.0005 0.0040 J 0.085 0.177 0.0034 0.0070 K 0.35 0.69 0.0140 0.0285 L 0.89 1.02 0.0350 0.0401 S 2.10 2.64 0.0830 0.1039 V 0.45 0.60 0.0177 0.0236

AiT Semiconductor Inc. www.ait-ic.com MBT6517 GENERAL PURPOSE TRANSISTORS NPN SILICON REV1.0 - JUN 2015 RELEASED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.