MBT4403L AITSEMI | Alldatasheet

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AiT Semiconductor Inc. www.ait-ic.com MBT4403L SWITCHING TRANSISTORS GENERAL PURPOSE TRANSISTORS – PNP SILICON REV1.0 - AUG 2011 RELEASED - - 1 - DESCRIPTION FEATURES The MBT4403L is available in SOT-23 package  Available in SOT-23 package

ORDERING INFORMATION

Note 3,000PCS/Reel AiT provides all RoHS Compliant Products PIN DESCRIPTION

AiT Semiconductor Inc. www.ait-ic.com MBT4403L SWITCHING TRANSISTORS GENERAL PURPOSE TRANSISTORS – PNP SILICON REV1.0 - AUG 2011 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS VCEO,Collector–Emitter Voltage – 40Vdc VCBO, Collector–Base Voltage – 40Vdc VEBO, Emitter–Base Voltage – 5.0Vdc IC, Collector Current — Continuous – 600mAdc Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS PD, Total Device Dissipation FR –5 BoardNOTE1 T A =25 °C 225 mW Derate above 25°C 1.8 mW/°C RθJA, Thermal Resistance Junction to Ambient 556 °C/W PD,Total Device Dissipation Alumina SubstrateNote2 T A = 25°C 300 mW Derate above 25°C 2.4 mW/°C RθJA, Thermal Resistance, Junction to Ambient 417 °C/W TJ ,Tstg, Junction and Storage Temperature –55 to +150 °C NOTE1: FR–5 = 1.0 x 0.75 x 0.062 in.

AiT Semiconductor Inc. www.ait-ic.com MBT4403L SWITCHING TRANSISTORS GENERAL PURPOSE TRANSISTORS – PNP SILICON REV1.0 - AUG 2011 RELEASED - - 3 -

ELECTRICAL CHARACTERISTICS

TA = 25°C unless otherwise specified Parameter Symbol Conditions Min. Max. Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage Note3 V(BR)CEO IC = –1.0 mAdc, IB= 0 – 40 - Vdc Collector–Base Breakdown Voltage V(BR)CB IC = –0.1mAdc, IE = 0 – 40 - Vdc Emitter–Base Breakdown Voltage V(BR)EBO IE = –0.1mAdc, IC = 0 – 5.0 - Vdc Base Cutoff Current IBEV VCE = –35 Vdc, VEB = –0.4 Vdc - – 0.1 μAdc Collector Cutoff Current ICEX VCE = –35 Vdc, VEB = –0.4 Vdc - – 0.1 μAdc ON CHARACTERISTICS DC Current Gain hFE IC = –0.1mAdc, VCE= –1.0Vdc 30 IC = –1.0mAdc, VCE = –1.0Vdc 60 IC = –10mAdc, VCE = –1.0 Vdc 100 IC = –150mAdc, VCE= –2.0Vdc)Note3 100 300 IC = –500mAdc, VCE = –2.0Vdc) Note3 20 -- Collector–Emitter Saturation Voltage Note3 VCE(sat) IC = –150mAdc, IB = –15mAdc - – 0.4 Vdc IC = –500mAdc, IB = –50mAdc - – 0.75 Base–Emitter SaturationVoltageNote3 VBE(sat) IC = –150mAdc, IB = –15mAdc – 0.75 – 0.95 Vdc IC = –500mAdc, IB = –50mAdc - – 1.3 NOTE3: Pulse Test: Pulse Width <300 μs; Duty Cycle <2.0%.

AiT Semiconductor Inc. www.ait-ic.com MBT4403L SWITCHING TRANSISTORS GENERAL PURPOSE TRANSISTORS – PNP SILICON REV1.0 - AUG 2011 RELEASED - - 4 - Parameter Symbol Conditions Min. Max. Unit SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product fT IC = –20mAdc, VCE= –10Vdc, f = 100 MHz 200 - MHz Collector–Base Capacitance Ccb VCB= –10Vdc, IE = 0, f = 1.0 MHz - 8.5 pF Emitter–Base Capacitance Ceb VBE = –0.5Vdc, IC = 0, f = 1.0 MHz - 30 pF Input Impedance hie VCE= –10Vdc, IC = –1.0mAdc, f = 1.0 kHz 1.5 15 kΩ Voltage Feedback Ratio hre VCE= –10Vdc, IC = –1.0mAdc, f = 1.0 kHz 0.1 8.0 X10–4 Small–Signal Current Gain hfe VCE= –10Vdc, IC = –1.0mAdc, f = 1.0 kHz 60 500 - Output Admittance hoe VCE= –10Vdc, IC = –1.0mAdc, f = 1.0 kHz 1.0 100 μmhos SWITCHING CHARACTERISTICS Delay Time td VCC = – 30Vdc, VEB = –2.0Vdc ns Rise Time td IC = –150mAdc, IB1 = –15mAdc Storage Time ts VCC = –30Vdc, IC = –150mAdc - 225 ns Fall Time tf IB1 = IB2 = –15mAdc 30

AiT Semiconductor Inc. www.ait-ic.com MBT4403L SWITCHING TRANSISTORS GENERAL PURPOSE TRANSISTORS – PNP SILICON REV1.0 - AUG 2011 RELEASED - - 9 -

PACKAGE INFORMATION

Dimension in SOT-23 Package (Unit: mm) DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.035 0.044 0.89 1.11 A1 0.001 0.004 0.01 0.10 b 0.015 0.020 0.37 0.50 c 0.003 0.007 0.09 0.18 D 0.110 0.120 2.80 3.04 E 0.047 0.055 1.20 1.40 e 0.070 0.081 1.78 2.04 L 0.004 0.012 0.10 0.30 L1 0.014 0.029 0.35 0.69 HE 0.083 0.104 2.10 2.64

AiT Semiconductor Inc. www.ait-ic.com MBT4403L SWITCHING TRANSISTORS GENERAL PURPOSE TRANSISTORS – PNP SILICON REV1.0 - AUG 2011 RELEASED - - 10 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.