NST3946DW1T1 ONSEMI | Alldatasheet
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Semiconductor Components Industries, LLC, 2004 January, 2004 − Rev. 2
1 Publication Order Number:
The MBT3946DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6 surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium.
- hFE , 100−300
- Low V CE(sat), ≤ 0.4 V
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
- Device Marking: MBT3946DW1T1 = 46
- Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage (NPN) (PNP) VCEO −40 Vdc Collector−Base Voltage (NPN) (PNP) VCBO −40 Vdc Emitter−Base Voltage (NPN) (PNP) VEBO 6.0 −5.0 Vdc Collector Current − Continuous (NPN) (PNP) IC 200 −200 mAdc Electrostatic Discharge ESD HBM>16000, MM>2000 V THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Package Dissipation (Note 1) T A = 25°C PD 150 mW Thermal Resistance Junction−to−Ambient R JA 833 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. SOT−363−6/SC−88 CASE 419B Style 1 1 2 3 6 5 4 Q 1 (1)(2)(3) (4) (5) (6) Q 2 MBT3946DW1T1* Device Package Shipping †
ORDERING INFORMATION
MBT3946DW1T1 SOT−363 3000/Tape & Reel *Q1 PNP Q2 NPN http://onsemi.com 46d 46 = Specific Device Code d = Date Code MARKING DIAGRAM †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MBT3946DW1T1G SOT−363 3000/Tape & Reel MBT3946DW1T2 SOT−363 3000/Tape & Reel MBT3946DW1T2G SOT−363 3000/Tape & Reel
http://onsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) (NPN) (IC = −1.0 mAdc, IB = 0) (PNP) V(BR)CEO −40 Vdc Collector−Base Breakdown Voltage (IC = 10 Adc, IE = 0) (NPN) (IC = −10 Adc, IE = 0) (PNP) V(BR)CBO −40 Vdc Emitter−Base Breakdown Voltage (IE = 10 Adc, IC = 0) (NPN) (IE = −10 Adc, IC = 0) (PNP) V(BR)EBO 6.0 −5.0 Vdc Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (NPN) (VCE = −30 Vdc, VEB = −3.0 Vdc) (PNP) IBL −50 nAdc Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (NPN) (VCE = −30 Vdc, VEB = −3.0 Vdc) (PNP) ICEX −50 nAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (NPN) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = −0.1 mAdc, VCE = −1.0 Vdc) (PNP) (IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −50 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) hFE 100 100 300 300 Collector−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (NPN) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = −10 mAdc, IB = −1.0 mAdc) (PNP) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) 0.2 0.3 −0.25 −0.4 Vdc Base−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (NPN) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = −10 mAdc, IB = −1.0 mAdc) (PNP) (IC = −50 mAdc, IB = −5.0 mAdc) VBE(sat) 0.65 −0.65 0.85 0.95 −0.85 −0.95 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (NPN) (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) (PNP) fT 300 250 MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (NPN) (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) (PNP) C obo 4.0 4.5 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (NPN) (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) (PNP) C ibo 8.0 10.0 pF 2. Pulse Test: Pulse Width ≤ 300 s; Duty Cycle ≤ 2.0%.
http://onsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP) hie 1.0 2.0 k Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP) hre 0.5 0.1 8.0 X 10−4 Small−Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP) hfe 100 100 400 400 Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP) hoe 1.0 3.0 mhos Noise Figure (VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k, f = 1.0 kHz) (NPN) (VCE = −5.0 Vdc, IC = −100 Adc, RS = 1.0 k, f = 1.0 kHz) (PNP) NF 5.0 4.0 dB SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = −0.5 Vdc) (NPN) (VCC = −3.0 Vdc, VBE = 0.5 Vdc) (PNP) td − ns Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) (NPN) (IC = −10 mAdc, IB1 = −1.0 mAdc) (PNP) tr − ns Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) (NPN) (VCC = −3.0 Vdc, IC = −10 mAdc) (PNP) ts − 200 225 ns Fall Time (IB1 = IB2 = 1.0 mAdc) (NPN) (IB1 = IB2 = −1.0 mAdc) (PNP) tf − ns
Figure 19. Delay and Rise Time Figure 20. Storage and Fall Time
10.6 V 300 ns
Figure 21. Capacitance Figure 22. Charge Data Figure 23. Turn−On Time Figure 24. Fall Time
- DIMENSIONING AND TOLERANCING PER ANSI
- CONTROLLING DIMENSION: INCH.
- 419B-01 OBSOLETE, NEW STANDARD 419B-02.
Figure 35. SC−88/SC70−6 Mounting Techniques Reference Manual, SOLDERRM/D.
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