MBT3946DW WEITRON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 11

Technical content

Dual General Purpose Transistor NPN+PNP Silicon Maximum Ratings Collector-Emitter Voltage (NPN) (PNP) Collector-Base Voltage (NPN) (PNP) Emitter-Base VOltage (NPN) (PNP) Collector Current-Continuous (NPN) (PNP) Symbol VCEO VCBO VEBO IC Value -40 -40 6.0 -5.0 Unit Vdc Vdc Vdc mAdc 200 Rating MBT3946DW=46 Device Marking WEITRON MBT3946DW http://www.weitron.com.tw Thermal Resistance, Junction to Ambient Total Package Dissipation Junction and Storage, Temperature Characteristics TJ,Tstg PD Symbol Max 150 833 -55 to +150 Unit mW C/W C Thermal Characteristics R JAq SOT-363(SC-88) 4 5 NPN+PNP 1 2 3 6 5 4 -200 (1) TA=25 C

  1. Pulse Test:Pulse Width 300 µS, Duty Cycle 2.0%. Collector-Emitter Breakdown Voltage(2) (IC=1.0mAdc.IB=0) Collector-Base Breakdown Voltage (IC=10 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE=10 µAdc, IC=0) Base Cutoff Current (VCE=30 Vdc, VEB =3.0 Vdc) Collector Cutoff Current (VCE=30Vdc, VEB=3.0Vdc) V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Vdc Vdc Vdc nAdc nAdc Off C har acter istics 6.0 <= <= http://www.weitron.com.tw (NPN) (IC=-1.0mAdc.IB=0) (PNP) -40 (NPN) (IC=-10 µAdc, IE=0) (PNP) -40 (IE=-10 µAdc, IC=0) (NPN) (PNP) -5.0 (NPN) (VCE=-30 Vdc, VEB =-3.0 Vdc) (PNP) -50 (VCE=-30Vdc, VEB=-3.0Vdc) (NPN) (PNP) -50 1. Device Mounted on FR4 glass epoxy printed circuit board using the minimum recommeded footprint. DC Current Gain (IC= 0.1 mAdc, VCE=1.0Vdc) (IC= 1.0 mAdc, VCE= 1.0 Vdc) (IC= 10 mAdc, VCE= 1.0Vdc) (IC= 50 mAdc, VCE= 1.0Vdc) (IC= 100 mAdc, VCE= 1.0Vdc) Collector-Emitter Saturation Voltage (IC= 10 mAdc, IB= 1.0mAdc) (IC= 50 mAdc, IB= 5.0mAdc) Base-Emitter Saturation Voltage (IC= 10 mAdc, IB= 1.0 mAdc) (IC= 50 mAdc, IB= 5.0 mAdc) HFE VCE(sat) VBE(sat) Vdc Vdc 100 300 -0.85 On Characteristics Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol UnitMin Max (2) (NPN) (IC= -0.1 mAdc, VCE=-1.0Vdc) (IC= -1.0 mAdc, VCE= -1.0 Vdc) (IC= -10 mAdc, VCE= -1.0Vdc) (IC= -50 mAdc, VCE= -1.0Vdc) (IC= -100 mAdc, VCE= -1.0Vdc) (PNP) 300 100 (NPN) (IC= -10 mAdc, IB= -1.0mAdc) (IC=-50 mAdc, IB= -5.0mAdc) (PNP) 0.20 0.30 -0.25 -0.40 (IC= -10 mAdc, IB= -1.0 mAdc) (IC= -50 mAdc, IB= -5.0 mAdc) (NPN) (PNP) 0.65 -0.65 0.85 0.95 -0.95

Small-signal Characteristics Switching Characteristics Current-Gain-Bandwidth Product (IC= 10 mAdc, VCE= 20 Vdc, f=100MHz) Output Capacitance (VCB= 5.0 Vdc, IE=0, f=1.0MHz) Input Capacitance (VEB= 0.5 Vdc, IC=0, f=1.0MHz) Input Impedance (VCE= 10 Vdc, IC=1.0 mAdc, f=1.0 kHz) Voltage Feeback Radio (VCE= 10Vdc, IC=1.0 mAdc, f=1.0 kHz) Small-Signal Current Gain (VCE= 10Vdc, IC=1.0 mAdc, , f=1.0 kHz) Output Admittance (VCE= 10Vdc, IC=1.0 mAdc, f=1.0kHz) Noise Figure (VCE= 5.0Vdc, IC= 100 µAdc, , RS=1.0k ohms, f=1.0kHz) 300 0.5 1.0 100 1.0 4.0 5.0 MBT3946DW 400 8.0 8.0 Delay Time Rise Time Storage Time Fall Time (Vcc= 3.0 Vdc, VBE= -0.5 Vdc) (Ic= 10 mAdc, IB1=IB2= 1.0 mAdc) (Vcc= 3.0 Vdc,Ic= 10 mAdc) td tr ts tf ns ns ns ns (IC= -10 mAdc, VCE= -20 Vdc, f=100MHz) (NPN) (PNP) fT 250 MHz (VCB= -5.0 Vdc, IE=0, f=1.0MHz) (NPN) (PNP) Cobo pF (VEB= -0.5 Vdc, IC=0, f=1.0MHz) (NPN) (PNP) Cibo 10.0 pF (VCE= -10 Vdc, IC=-1.0 mAdc, f=1.0 kHz) (NPN) (PNP) hie 2.0 12 k ohms (VCE= -10Vdc, IC=-1.0 mAdc, f=1.0 kHz) (NPN) (PNP) hre 0.1 10 x 10-4 (VCE= -10Vdc, IC=-1.0 mAdc, , f=1.0 kHz) (NPN) (PNP) hfe 100 400 (VCE= -10Vdc, IC=-1.0 mAdc, f=1.0kHz) hoe 3.0 60 µmhos (VCE= -5.0Vdc, IC= -100 µAdc, , RS=1.0k ohms, f=1.0kHz) (NPN) (PNP) (NPN) (PNP) NF 4.0 dB 4.5 (Ic= 10 mAdc, IB1= 1.0 mAdc) (Ic= -10 mAdc, IB1= -1.0 mAdc) (Vcc= -3.0 Vdc, VBE= 0.5 Vdc) (NPN) (PNP) (Vcc= -3.0 Vdc,Ic= -10 mAdc) (NPN) (PNP) 200 225 (Ic= -10 mAdc, IB1=IB2= -1.0 mAdc) 75 WEITRON http://www.weitron.com.tw

http://www.weitron.com.tw 1 2 3 A K J ML 6 5 4 B D H E C Dim A B C D E H J K L M Min 0.10 1.15 2.00 0.30 1.80 0.80 0.25 0.10

0.65 REF

0.30 1.35 2.20 0.40 2.20 0.10 1.10 0.40 0.25 SOT-363