MBT3946DW AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com MBT3946D SWITCHING TRANSISTORS DUAL GENERAL PURPOSE TRANSISTORS REV1.0 - MAR 2013 RELEASED - - 1 - DESCRIPTION FEATURES The MBT3946D device is a spin –off of our popular SOT–23/SOT–323 three –leaded device. It is designed for general purpose amplifier applications and is housed in the SOT –363 six–leaded surface mount package. By putting two discrete devi ces in one package, this device is ideal for low –power surface mount applications where board space is at a premium. The MBT3946D is available in SC-88 package. hFE, 100–300 Low VCE(sat), < 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count RoHS compliance Available in SC-88 package ORDERING INFORMATION PIN DESCRIPTION Package Type Part Number SC-88 MBT3946D Note 3,000pcs/ Reel AiT provides all RoHS Compliant Products MBT3946D* *Q1 PNP Q2 NPN
AiT Semiconductor Inc. www.ait-ic.com MBT3946D SWITCHING TRANSISTORS DUAL GENERAL PURPOSE TRANSISTORS REV1.0 - MAR 2013 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS NOTE1: Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint VCEO, Collector-Emitter Voltage NPN / PNP 40Vdc / -40Vdc VCBO , Collector-Base Voltage NPN / PNP 60Vdc / -40Vdc VEBO, Emitter-Base Voltage NPN / PNP 6.0Vdc / - 5.0Vdc IC, Collector Current-Continuous NPN / PNP 200mAdc / -200mAdc Parameter Symbol Max Unit Total Package DissipationNOTE1 TA = 25°C PD 150 mW Thermal Resistance, Junction to Ambient RθJA 833 °C/W Junction and Storage Temperature TJ, TSTG -55 to +150 °C
AiT Semiconductor Inc. www.ait-ic.com MBT3946D SWITCHING TRANSISTORS DUAL GENERAL PURPOSE TRANSISTORS REV1.0 - MAR 2013 RELEASED - - 3 -
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise noted Parameter Symbol Conditions Min Max Unit OFFCHARACTERISTICS Collector–Emitter Breakdown VoltageNOTE2 V (BR)CEO IC = 1.0mAdc, IB = 0 NPN 40 - Vdc IC = -1.0mAdc, IB = 0 PNP -40 - Collector–Base Breakdown Voltage V(BR)CBO IC =10μAdc, IE = 0 NPN 60 - Vdc IC =-10μAdc, IE = 0 PNP -40 - Emitter-Base Breakdown Voltage V(BR)EBO IE =10μAdc, IC = 0 NPN 6.0 - Vdc IE =-10μAdc, IC = 0 PNP -5.0 - Base Cutoff Current IBL VCE = 30Vdc, VEB = 3.0Vdc NPN - 50 nAdc VCE = -30Vdc, VEB = -3.0Vdc PNP - -50 Collector Cutoff Current ICEX VCE = 30Vdc, VEB = 3.0Vdc NPN - 50 nAdc VCE = -30Vdc, VEB = -3.0Vdc PNP - -50 ONCHARACTERISTICSNOTE2 DC Current Gain hFE IC = 0.1mAdc, VCE = 1. 0Vdc IC = 1.0mAdc, VCE = 1.0Vdc IC = 10mAdc,VCE = 1.0Vdc IC = 50mAdc, VCE = 1.0Vdc IC = 100mAdc,VCE = 1.0Vdc NPN 40 - 70 - 100 300 60 - 30 - IC = –0.1mAdc, VCE = –1. 0Vdc IC = –1.0mAdc, VCE = –1.0Vdc IC = –10mAdc,VCE = –1.0Vdc IC = –50mAdc, VCE = –1.0Vdc IC = –100mAdc,VCE = –1.0Vdc PNP 60 - 80 - 100 300 60 - 30 - Collector–Emitter Saturation Voltage VCE(SAT) IC = 10mAdc,IB = 1.0mAdc IC = 50mAdc, IB = 5.0mAdc NPN - 0.2 Vdc - 0.3 IC = –10mAdc,IB = –1.0mAdc IC = –50mAdc, IB = –5.0mAdc PNP - - 0.25 - -0.4 Base–Emitter Saturation Voltage VBE(SAT) IC = 10mAdc, IB = 1.0mAdc NPN 0.65 0.85 Vdc IC = 50mAdc, IB = 5.0mAdc - 0.95 IC = –10mAdc, IB = –1.0mAdc PNP -0.65 -0.85 IC = –50mAdc, IB = –5.0mAdc - -0.95 NOTE2: Pulse Test: Pulse Width≤300μs; Duty Cycle≤2.0%.
AiT Semiconductor Inc. www.ait-ic.com MBT3946D SWITCHING TRANSISTORS DUAL GENERAL PURPOSE TRANSISTORS REV1.0 - MAR 2013 RELEASED - - 4 - TA = 25°C, unless otherwise noted Parameter Symbol Conditions Min Max Unit SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product fT IC=10mAdc,VCE=20Vdc,f = 100MHz NPN 300 - MHz IC=-10mAdc,VCE=-20Vdc,f = 100MHz PNP 250 - Output Capacitance Cobo VCB= 5.0Vdc, IE = 0,f = 1.0MHz NPN - 4.0 pF VCB= -5.0Vdc, IE = 0,f = 1.0MHz PNP - 4.5 Input Capacitance Cibo VEB = 0.5Vdc, IC = 0,f = 1.0MHz NPN - 8.0 pF VEB = -0.5Vdc, IC = 0,f = 1.0MHz PNP - 10.0 Input Impedance hie VCE= 10Vdc,IC=1.0mAdc,f = 1.0kHz NPN 1.0 10 KΩ VCE= -10Vdc,IC=-1.0mAdc,f = 1.0kHz PNP 2.0 12 Voltage Feedback Ratio hre VCE=10Vdc,IC=1.0mAdc,f = 1.0kHz NPN 0.5 8.0 X10 –4 VCE=-10Vdc,IC=-1.0mAdc,f = 1.0kHz PNP 0.1 10 Small–Signal Current Gain hFE VCE=10Vdc,IC=1.0mAdc,f = 1.0kHz NPN 100 400 VCE=-10Vdc,IC=-1.0mAdc,f = 1.0kHz PNP 100 400 Output Admittance hoe VCE=10Vdc,IC=1.0mAdc,f = 1.0kHz NPN 1.0 40 μmhos VCE=-10Vdc,IC=-1.0mAdc,f = 1.0kHz PNP 3.0 60 Noise Figure NF VCE=5.0Vdc,IC=100μAdc, RS=1.0kΩ, f =1.0kHz NPN 5.0 - dB VCE=-5.0Vdc,IC=-100μAdc, RS=1.0kΩ, f =1.0kHz PNP 4.0 - SWITCHING CHARACTERISTICS Delay Time td VCC =3.0Vdc, VBE = -0.5Vdc NPN - 35 ns VCC =-3.0Vdc, VBE = 0.5Vdc PNP - 35 Rise Time tr IC =10mAdc, IB1 =1.0mAdc NPN - 35 IC =-10mAdc, IB1 =-1.0mAdc PNP - 35 Storage Time ts VCC = 3.0Vdc, IC =10mAdc NPN - 200 ns VCC = -3.0Vdc, IC =-10mAdc PNP - 225 Fall Time tf IB1 = IB2 = 1.0mAdc NPN - 50 IB1 = IB2 = -1.0mAdc PNP - 75
AiT Semiconductor Inc. www.ait-ic.com MBT3946D SWITCHING TRANSISTORS DUAL GENERAL PURPOSE TRANSISTORS REV1.0 - MAR 2013 RELEASED - - 12 -
PACKAGE INFORMATION
Dimension in SC-88 Package (Unit: mm) DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 C 0.031 0.043 0.80 1.10 D 0.004 0.012 0.10 0.30 G 0.026 BSC 0.65 BSC H - 0.004 - 0.10 J 0.004 0.010 0.10 0.25 K 0.004 0.012 0.10 0.30 N 0.008 REF 0.20 REF S 0.079 0.087 2.00 2.20
AiT Semiconductor Inc. www.ait-ic.com MBT3946D SWITCHING TRANSISTORS DUAL GENERAL PURPOSE TRANSISTORS REV1.0 - MAR 2013 RELEASED - - 13 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.