MBT3906L AITSEMI | Alldatasheet

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AiT Semiconductor Inc. www.ait-ic.com MBT3906L SWITCHING TRANSISTOR PNP TRANSISTOR REV1.2 - MAY 2011 RELEASED, APR 2019 UPDATED - - 1 - DESCRIPTION FEATURES The MBT3906L is available in SOT-23 Package.  Available in SOT-23 Package ORDERING INFORMATION PIN DESCRIPTION Package Type Part Number SOT-23 MBT3906L Note SPQ:3,000pcs/Reel AiT provides all RoHS Compliant Products

AiT Semiconductor Inc. www.ait-ic.com MBT3906L SWITCHING TRANSISTOR PNP TRANSISTOR REV1.2 - MAY 2011 RELEASED, APR 2019 UPDATED - - 2 - ABSOLUTE MAXIMUM RATINGS Stresses above may cause permane nt damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS NOTE1: FR-5 = 1.0 x 0.75 x 0.062 in. VCEO, Collector - Emitter Voltage -40Vdc VCBO, Collector - Base Voltage -40Vdc VEBO, Emitter - Base Voltage -5.0Vdc IC, Collector Current - Continuous -200mAdc Parameter Symbol Max Unit Total Device Dissipation FR-5 BoardNOTE1 TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Total Device Dissipation Alumina SubstrateNOTE2 TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 417 °C/W Junction and Storage Temperature TJ , Tstg -55 to +150 °C

AiT Semiconductor Inc. www.ait-ic.com MBT3906L SWITCHING TRANSISTOR PNP TRANSISTOR REV1.2 - MAY 2011 RELEASED, APR 2019 UPDATED - - 3 -

ELECTRICAL CHARACTERISTICS

NOTE1: FR-5 = 1.0 x 0.75 x 0.062 in. NOTE3: Pulse Width <300μ s; Duty Cycle <2.0%. Parameter Symbol Conditions Min Max Unit OFFCHARACTERISTICS Collector-Emitter Breakdown VoltageNOTE3 V(BR)CEO IC = -1.0mAdc, IB = 0 -40 - Vdc Collector-Base Breakdown Voltage V(BR)CBO IC = -10μAdc, IE = 0 -40 - Vdc Emitter-Base Breakdown Voltage V(BR)EBO IE = -10μAdc, IC = 0 -5.0 - Vdc Base Cutoff Current IBL VCE= -30Vdc, VEB = -3.0Vdc - -50 nAdc Collector Cutoff Current ICEX VCE = -30Vdc, V EB = -3.0Vdc - -50 nAdc ON CHARACTERISTICSNOTE2 DC Current GainNOTE1 hFE IC = -0.1mAdc, VCE = -1.0Vdc 60 - - IC = -1.0mAdc, VCE = -1.0Vdc 80 - - IC = -10mAdc, VCE = -1.0Vdc 100 300 - IC = -50mAdc, VCE = -1.0Vdc 60 - - IC = -100mAdc, VCE =-1.0 Vdc 30 - - Collector–Emitter Saturation Voltage VCE(sat) IC = -10mAdc, IB = -1.0mAdcNOTE3 - -0.25 Vdc IC = -50mAdc, IB = -5.0mAdc - -0.4 Base-Emitter Saturation SMALL–SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product fT IC = -10mAdc, V CE = -20Vdc, f = 100MHz 250 - MHz Output Capacitance Cobo VCB = -5.0Vdc, I E = 0, f = 1.0MHz - 4.5 pF Input Capacitance Cibo VBE = -0.5Vdc, IC = 0, f = 1.0MHz - 10 pF Input Impedancen hie VCE = -10Vdc, I C = -1.0mAdc, f = 1.0kHz 2.0 12 kΩ Voltage Feedback Ratio hre VCE = -10Vdc, I C = -1.0mAdc, f = 1.0kHz 0.1 10 x10 –4 Small–Signal Current Gain hfe VCE = -10Vdc, IC = -1.0mAdc, f = 1.0kHz 100 400 - Output Admittance hoe VCE = -10Vdc, IC = -1.0mAdc, f = 1.0kHz 3.0 60 μmhos Noise Figure NF VCE = -5.0Vdc, IC = -100μAdc, RS = 1.0kΩ, f = 1.0kHz - 4.0 dB SWITCHING CHARACTERISTICS Delay Time td VCC = -3.0Vdc,VBE = 0.5Vdc IC = -10mAdc, IB1 = -1.0mAdc - 35 ns Rise Time tr - 35 Storage Time ts VCC = -3.0Vdc, IC = -10mAdc, I B1 = I B2 = -1.0mAdc - 225 ns Fall Time tf - 75

AiT Semiconductor Inc. www.ait-ic.com MBT3906L SWITCHING TRANSISTOR PNP TRANSISTOR REV1.2 - MAY 2011 RELEASED, APR 2019 UPDATED - - 7 -

PACKAGE INFORMATION

Dimension in SOT-23 Package (Unit: mm) DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.035 0.044 0.89 1.11 A1 0.001 0.004 0.01 0.10 b 0.015 0.020 0.37 0.50 c 0.003 0.007 0.09 0.18 D 0.110 0.120 2.80 3.04 E 0.047 0.055 1.20 1.40 e 0.070 0.081 1.78 2.04 L 0.004 0.012 0.10 0.30 L1 0.014 0.029 0.35 0.69 HE 0.083 0.104 2.10 2.64

AiT Semiconductor Inc. www.ait-ic.com MBT3906L SWITCHING TRANSISTOR PNP TRANSISTOR REV1.2 - MAY 2011 RELEASED, APR 2019 UPDATED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obta in the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for u se in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or s erver property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product desig n or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.