MBT3906DW WEITRON | Alldatasheet
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Technical content
Dual General Purpose Transistor PNP+PNP Silicon 1.Decice Mounted on FR4 glass epoxy printed circuit board using the minimun recommended foot print. 2.Pulse Test:Pluse Width 300 µS, Duty Cycle 2.0%. Maximum Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -40 -40 -5.0 Unit Vdc Vdc Vdc mAdc -200 Rating MBT3906DW=A2 Device Marking Collector-Emitter Breakdown Voltage(2) (IC=-1.0mAdc.IB=0) Collector-Base Breakdown Voltage (IC=-10 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE=-10 uAdc, IC=0) Base Cutoff Current (VCE=-30 Vdc, VEB =-3.0 Vdc) Collector Cutoff Current (VCE=-30Vdc, VEB=-3.0Vdc) V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX -50 -50 Vdc Vdc Vdc nAdc nAdc Off Characteristics MBT3906DW -40 -40 -5.0 <= <= Characteristics Symbol Min Max Unit Electrical Characteristics (TA=25 C Unless Otherwise noted) http://www.weitron.com.tw WEITRON Thermal Resistance, Junction to Ambient Total Device Dissipation TA=25 C Junction and Storage,Temperature Characteristics TJ,Tstg PD Symbol Max 833 -55 to +150 Unit mW C/W C Thermal Characteristics R JA SOT-363(SC-88) (1) 150 4 5 PNP+PNP 1 2 3 6 5 4 θ Lead(Pb)-Free Pb 1/6 27-Sep-05
Small-signal Characteristics Current-Gain-Bandwidth Product (1) (IC= -10 mAdc, VCE= -20 Vdc, f=100MHz) Output Capacitance (VCB= -5.0 Vdc, IE=0, f=1.0MHz) Input Capacitance (VEB= -0.5 Vdc, IC=0, f=1.0MHz) Input Impedance (VCE= -10 Vdc IC=-1.0 mAdc, f=1.0 kHz) Voltage Feeback Radio (VCE= -10Vdc IC=1.0 mAdc, f=1.0 kHz) Small-Signal Current Gain (VCE= -10Vdc IC=1.0 mAdc, , f=1.0 kHz) Output Admittance (VCE= -10Vdc IC=1.0 mAdc, f=-1.0kHz) Noise Figure (VCE= -5.0Vdc IC= -100 µAdc, , RS=1.0k ohms, f=1.0kHz) fT Cobo Cibo hie hre hfe hoe NF 250 0.1 2.0 100 3.0 4.5 4.0 MHz pF pF k ohms x 10-4 µmhos dB 400 DC Current Gain (IC= -0.1 mAdc, VCE= -1.0Vdc) (IC= -1.0 mAdc, VCE= -1.0 Vdc) (IC= -10 mAdc, VCE= -1.0Vdc) (IC= -50 mAdc, VCE= -1.0Vdc) (IC= -100 mAdc, VCE= -1.0Vdc) Collector-Emitter Saturation Voltage (2) (IC= -10 mAdc, IB= -1.0mAdc) (IC= -50 mAdc, IB= -5.0mAdc) Base-Emitter Saturation Voltage (2) (IC= -10 mAdc, IB= -1.0 mAdc) (IC= -50 mAdc, IB= -5.0 mAdc) HFE VCE(sat) VBE(sat) Vdc Vdc 100 On Characteristics -0.65 300 -0.25 -0.4 -0.85 -0.95 (2) Switching Characteristics Delay Time Rise Time Storage Time Fall Time (Vcc= -3.0 Vdc, VBE= 0.5 Vdc Ic= -10 mAdc, IB1= -1.0 mAdc) (Vcc= -3.0 Vdc, Ic= -10 mAdc, IB1=IB2= -1.0 mAdc) td tr ts tf 225 ns ns WEITRON http://www.weitron.com.tw Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol UnitMin Max
http://www.weitron.com.tw 1 2 3 A K J ML 6 5 4 B D H E C Dim A B C D E H J K L M Min 0.10 1.15 2.00 0.30 1.80 0.80 0.25 0.10
0.65 REF
0.30 1.35 2.20 0.40 2.20 0.10 1.10 0.40 0.25 SOT-363