MBT3904DW WEITRON | Alldatasheet
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Dual General Purpose Transistor NPN+NPN Silicon Maximum Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 6.0 Unit Vdc Vdc Vdc mAdc 200 Rating MBT3904DW=MA Device Marking WEITRON MBT3904DW Collector-Emitter Breakdown Voltage(2) (IC=1.0mAdc.IB=0) Collector-Base Breakdown Voltage (IC=10 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE=10 uAdc, IC=0) Base Cutoff Current (VCE=30 Vdc, VEB =3.0 Vdc) Collector Cutoff Current (VCE=30Vdc, VEB=3.0Vdc) V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Vdc Vdc Vdc nAdc nAdc Off C har acter istics 6.0 Characteristics Symbol Min Max Unit Electrical Characteristics (TA=25 C Unless Otherwise noted) http://www.weitron.com.tw Total Device Dissipation TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Characteristics TJ,Tstg PD Symbol Max 150 833 -55 to +150 Unit mW C/W C Thermal Characteristics R JA 1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint. 2. Pulse Test:Pulse Width 300uS, Duty Cycle 2.0%<= <= SOT-363(SC-88) 4 5 NPN+NPN 1 2 3 6 5 4 q
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol UnitMin Max MBT3904DW Small-signal Characteristics Current-Gain-Bandwidth Product (IC= 10 mAdc, VCE= 20 Vdc, f=100MHz) Output Capacitance (VCB= 5.0 Vdc, IE=0, f=1.0MHz) Input Capacitance (VEB= 0.5 Vdc, IC=0, f=1.0MHz) Input Impedance (VCE= 10 Vdc, IC=1.0 mAdc, f=1.0 kHz) Voltage Feeback Radio (VCE= 10Vdc, IC=1.0 mAdc, f=1.0 kHz) Small-Signal Current Gain (VCE= 10Vdc, IC=1.0 mAdc, , f=1.0 kHz) Output Admittance (VCE= 10Vdc, IC=1.0 mAdc, f=-1.0kHz) Noise Figure (VCE= 5.0Vdc, IC= 100 µAdc, , RS=1.0k ohms, f=1.0kHz) fT Cobo Cibo hie hre hfe hoe NF 300 0.5 1.0 100 1.0 4.0 5.0 MHz pF pF k ohms x 10-4 µmhos dB 400 8.0 8.0 Switching Characteristics Delay Time Rise Time Storage Time Fall Time (Vcc= 3.0 Vdc, VBE= -0.5 Vdc Ic= 10 mAdc, IB1= 1.0 mAdc) (Vcc= 3.0 Vdc, Ic= 10 mAdc, IB1=IB2= 1.0 mAdc) td tr ts tf 200 ns ns WEITRON DC Current Gain (IC= 0.1 mAdc, VCE=1.0Vdc) (IC= 1.0 mAdc, VCE= 1.0 Vdc) (IC= 10 mAdc, VCE= 1.0Vdc) (IC= 50 mAdc, VCE= 1.0Vdc) (IC= 100 mAdc, VCE= 1.0Vdc) Collector-Emitter Saturation Voltage (2) (IC= 10 mAdc, IB= 1.0mAdc) (IC= 50 mAdc, IB= 5.0mAdc) Base-Emitter Saturation Voltage (2) (IC= 10 mAdc, IB= 1.0 mAdc) (IC= 50 mAdc, IB= 5.0 mAdc) HFE VCE(sat) VBE(sat) Vdc Vdc 100 300 0.2 0.3 0.85 0.95 On Characteristics 0.65 (2) http://www.weitron.com.tw
http://www.weitron.com.tw 1 2 3 A K J ML 6 5 4 B D H E C Dim A B C D E H J K L M Min 0.10 1.15 2.00 0.30 1.80 0.80 0.25 0.10
0.65 REF
0.30 1.35 2.20 0.40 2.20 0.10 1.10 0.40 0.25 SOT-363