MBT3904DW AITSEMI | Alldatasheet

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AiT Semiconductor Inc. www.ait-ic.com MBT3904D DUAL GENERAL PURPOSE TRANSISTORS SWITCHING TRANSISTORS REV1.0 - JUL 2015 RELEASED - - 1 - DESCRIPTION FEATURES The MBT3904D device is a spin –off of our popular SOT-23/SOT-323 three –leaded device. It is designed for general purpose amplifier applic ations and is housed in the SC-88(SOT-363) six–leaded surface mount package. By putting two discrete devices in one package , this device is ideal for low–power surface mount applications where board space is at a premium. The MBT3904D is available in SC-88 package.  Low VCE(sat), ≤ 0.4 V  Simplifies Circuit Design  Reduces Board Space  Reduces Component Count  hFE, 100–300  Available in SC-88 package ORDERING INFORMATION PIN DESCRIPTION Package Type Part Number SC-88 MBT3904D Note SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2

AiT Semiconductor Inc. www.ait-ic.com MBT3904D DUAL GENERAL PURPOSE TRANSISTORS SWITCHING TRANSISTORS REV1.0 - JUL 2015 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characte ristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS NOTE1: Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. VCEO, Collector-Emitter Voltage 40Vdc VCBO, Collector-Base Voltage 60Vdc VEBO, Emitter-Base Voltage 6.0Vdc IC, Collector Current — Continuous 200mAdc Parameter Symbol Max Unit Total Device Dissipation, FR-5 Board NOTE1@TA = 25°C PD 150 mW Thermal Resistance, Junction–to–AmbientNOTE1 RθJA 833 °C/W Junction and Storage Temperature TJ , TSTG -55~+150 °C

AiT Semiconductor Inc. www.ait-ic.com MBT3904D DUAL GENERAL PURPOSE TRANSISTORS SWITCHING TRANSISTORS REV1.0 - JUL 2015 RELEASED - - 3 -

ELECTRICAL CHARACTERISTICS

TA=25°C Parameter Symbol Conditions Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage VBR(CEO) IC = 1.0mAdc, IB = 0 40 - V Collector-Base Breakdown Voltage V(BR)CBO IC = 10μAdc, IE = 0 60 - V Emitter-Base Breakdown Voltage V(BR)EBO IE = 10μAdc, IC = 0 6 - V Collector Cutoff Current ICEX VCE = 30Vdc, VEB = 3.0Vdc - 50 nA Base Cutoff Current IBL VCE = 30Vdc, VEB = 3.0Vdc - 50 nA ON CHARACTERISTICS NOTE2 DC Current Gain hFE IC = 0.1mAdc, VCE = 1.0Vdc 40 - IC = 1.0mAdc, VCE = 1.0Vdc 70 - IC = 10mAdc, VCE = 1.0Vdc 100 300 IC = 50mAdc, VCE = 1.0Vdc 60 - IC = 100mAdc, VCE =1.0Vdc 30 - Collector-Emitter Saturation Voltage VCE(sat) IC = 10mAdc, IB = 1.0mAdc - 0.2 V IC = 50mAdc, IB = 5.0mAdc - 0.3 Base-Emitter Saturation Voltage VBE(sat) IC = 10mAdc, IB = 1.0mAdc - 0.85 V IC = 50mAdc, IB = 5.0mAdc - 0.95 SMALL–SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product fT IC = 10mAdc, VCE= 20Vdc, f = 100MHz 300 - MHz Output Capacitance Cobo VCB = 5.0Vdc, IE = 0, f = 1.0MHz - 4 pF Input Capacitance Cibo VEB = 0.5Vdc, IC = 0, f = 1.0 MHz - 8 pF Input Impedance hie VCE= 10Vdc, IC = 1.0mAdc, f = 1.0 kHz 1 10 kΩ Voltage Feedback Ratio hre VCE= 10Vdc, IC = 1.0mAdc, f = 1.0 kHz 0.5 8 x10 –4 Small–Signal Current Gain hfe VCE= 10Vdc, IC = 1.0mAdc, f = 1.0 kHz 100 400 Output Admittance hoe VCE= 10Vdc, IC = 1.0mAdc, f = 1.0 kHz 1 40 μmhos Noise Figure NF VCE=5V, IC=100μA, RS=1.0k, f =1.0kHz - 5 dB SWITCHING CHARACTERISTICS Delay Time td VCC = 3.0Vdc,VBE = -0.5Vdc IC = 10mAdc, IB1 = 1.0mAdc - 35 ns Rise Time tr - 35 Storage Time ts VCC = 3.0Vdc, IC = 10mAdc, IB1 = IB2 = 1.0mAdc - 200 ns Fall Time tf - 50 NOTE2: Pulse Test: Pulse Width <300 μs, Duty Cycle <2.0%.

AiT Semiconductor Inc. www.ait-ic.com MBT3904D DUAL GENERAL PURPOSE TRANSISTORS SWITCHING TRANSISTORS REV1.0 - JUL 2015 RELEASED - - 6 -

PACKAGE INFORMATION

Dimension in SC-88 Package (Unit: mm) DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 C 0.031 0.043 0.80 1.10 D 0.004 0.012 0.10 0.30 G 0.026 BSC 0.65 BSC H - 0.004 - 0.10 J 0.004 0.010 0.10 0.25 K 0.004 0.012 0.10 0.30 N 0.008 REF 0.20 REF S 0.079 0.087 2.00 2.20

AiT Semiconductor Inc. www.ait-ic.com MBT3904D DUAL GENERAL PURPOSE TRANSISTORS SWITCHING TRANSISTORS REV1.0 - JUL 2015 RELEASED - - 7 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.