MBT2907ADW WEITRON | Alldatasheet

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Dual General Purpose Transistor PNP+PNP Silicon Maximum Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -60 -60 -5.0 Unit Vdc Vdc Vdc mAdc -600 Rating MBT2907ADW=2F Device Marking WEITRON MBT2907ADW Collector-Emitter Breakdown Voltage(2) (IC=-10mAdc.IB=0) Collector-Base Breakdown Voltage (IC=-10 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE=10 uAdc, IC=0) Base Cutoff Current (VCE=-30 Vdc, VEB =-0.5 Vdc) Collector Cutoff Current (VCE=-30Vdc, VEB=-0.5Vdc) V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX -50 -50 Vdc Vdc Vdc nAdc nAdc Off C har acter istics -60 -60 -5.0 Characteristics Symbol Min Max Unit Electrical Characteristics (TA=25 C Unless Otherwise noted) http://www.weitron.com.tw Total Device Dissipation TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Characteristics TJ,Tstg PD Symbol Max 200 625 -55 to +150 Unit mW C/W C Thermal Characteristics R JA 1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint. 2. Pulse Test:Pulse Width 300uS, Duty Cycle 2.0%<= <= SOT-363(SC-88) 1 2 3 6 5 4 q 4 5 PNP+PNP

Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol UnitMin Max MBT2907ADW Small-signal Characteristics Current-Gain-Bandwidth Product (IC= -50 mAdc, VCE= -20 Vdc, f=100MHz) Output Capacitance (VCB= -10 Vdc, IE=0, f=1.0MHz) Input Capacitance (VEB=-2.0 Vdc, IC=0, f=1.0MHz) fT Cobo Cibo 200 8.0 MHz pF pF30 Switching Characteristics Turn-On Time Delay Time Rise Time Turn-Off Time (Vcc= -30 Vdc, Ic= -150 mAdc, IB1= -15 mAdc) t t t t 100 ns WEITRON DC Current Gain (IC= -100uAdc, VCE=-10Vdc) (IC= -1.0 mAdc, VCE= -10Vdc) (IC= -10 mAdc, VCE= -10Vdc) (IC= -150 mAdc, VCE= -10Vdc) (IC= -500 mAdc, VCE= -10Vdc) Collector-Emitter Saturation Voltage (IC= -150 mAdc, IB= -15mAdc) (IC= -500 mAdc, IB= -50mAdc) Base-Emitter Saturation Voltage (IC= 150 mAdc, IB= 15 mAdc) (IC= 500 mAdc, IB= 50 mAdc) HFE VCE(sat) VBE(sat) Vdc Vdc 100 100 100 300 -0.4 -1.6 -1.3 -2.6 On Characteristics http://www.weitron.com.tw off d r off

http://www.weitron.com.tw 25 50 75 100 125 150 175 200 P , POWER DISSIPATION (mW)D T , AMBIENT T EMPERATURE (°C)A 100 150 200 1.0 5.0 -0.1 -10-1.0 -30 C , C AP AC ITAN C E (pF ) REVERSE VOLT S (V) Cobo Cibo I , BASE CURRENT (mA)B V, C OLLECT OR-EMITTER V OLTAGE (V)CE 0.001 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 I= 1mAC I= 10mAC I = 30mAC I = 100mAC I = 300mAC FIG.1 Max Power Dissipation vs Ambient Temperature FIG.2 Typical Capacitance FIG.3 Typical Collector Saturation Region

http://www.weitron.com.tw 1000 100 1 10 100 f , GAIN BANDWIDTH PRODUCT (MHz)T I , COLLECTOR CURRENT (mA)C V= 5VCE 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 100 V , BASE EMITTER V OLTAGE (V)BE(ON) I , COLLECTOR CURRENT (mA)C V= 5VCE T = 150°CA T = 25°CA T = -50°CA 1000 100 1 10 1000100 h , DC CURRENTFE GAIN (NORMALIZED) I , COLLECTOR CURRENT (mA)C V= 5VCE T= 1 50°CA T= 2 5°CA T= - 50°CA 0.1 0.2 0.3 0.6 0.5 0.4 1 10 100 1000 I , COLLECTOR C URRENT (mA)C V, C OLLECT OO RT EMITTERCE(SAT) SA TURATION VOLTAGE (V) IC IB =1 0 T = 150°CA T= 25°CA T = -50°CA FIG.4 Collector Emitter Saturation Voltage vs Collector Current FIG.5 DC Current vs Collector Current FIG.6 Base Emitter Voltage vs Collector Current FIG.7 Gain Bandwidth Product vs Collector Current

http://www.weitron.com.tw 12 3 A K J ML 65 4 B D H E C Dim A B C D E H J K L M Min 0.10 1.15 2.00 0.30 1.80 0.80 0.25 0.10

0.65 REF

0.30 1.35 2.20 0.40 2.20 0.10 1.10 0.40 0.25 SOT-363