MBT2222AL AITSEMI | Alldatasheet

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AiT Semiconductor Inc. www.ait-ic.com MBT2222AL SWITCHING TRANSISTOR NPN TRANSISTOR REV1.3 - MAY 2011 RELEASED, APR 2019 UPDATED - - 1 - DESCRIPTION FEATURES The MBT2222AL is available in SOT-23 Package.  Available in SOT-23 Package ORDERING INFORMATION PIN DESCRIPTION Package Type Part Number SOT-23 MBT2222AL Note SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products

AiT Semiconductor Inc. www.ait-ic.com MBT2222AL SWITCHING TRANSISTOR NPN TRANSISTOR REV1.3 - MAY 2011 RELEASED, APR 2019 UPDATED - - 2 - ABSOLUTE MAXIMUM RATINGS TA = 25°C VCEO, Collector-Emitter Voltage 40Vdc VCBO , Collector-Base Voltage 75Vdc VEBO, Emitter-Base Voltage 6.0Vdc IC, Collector Current-Continuous 600mAdc Stresses above may cause permanen t damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS NOTE1: FR-5 = 1.0 x 0.75 x 0.062 in. Parameter Symbol Max Unit Total Package Dissipation FR-5 BoardNOTE1 TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 556 °C/W Total Device Dissipation Alumina Substrate, TA = 25°CNOTE2 Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 417 °C/W Junction and Storage Temperature TJ, Tstg -55 to +150 °C

AiT Semiconductor Inc. www.ait-ic.com MBT2222AL SWITCHING TRANSISTOR NPN TRANSISTOR REV1.3 - MAY 2011 RELEASED, APR 2019 UPDATED - - 3 -

ELECTRICAL CHARACTERISTICS

TA = 25°C unless otherwise noted Parameter Symbol Conditions Min Max Unit OFFCHARACTERISTICS Collector–Emitter Breakdown VoltageNOTE3 V (BR)CEO IC = 10mAdc, IB = 0 40 - Vdc Collector-Emitter Breakdown Voltage V(BR)CBO IC = 10μAdc, IE = 0 75 - Vdc Emitter-Base Breakdown Voltage V(BR)EBO IE = 10μAdc, IC = 0 6.0 - Vdc Collector Cutoff Current ICEX VCB = 60Vdc, IEB(off) = 3.0Vdc - 10 nAdc Collector Cutoff Current ICBO VCB = 60Vdc, IE = 0 - 0.01 μAdc VCB = 60Vdc, IE = 0, TA = 125°C - 10 Emitter Cutoff Current IEBO VEB = 3.0Vdc, IC = 0 - 100 nAdc Base Current IBL VCE = 60Vdc, VEB(off) = 3.0Vdc - 20 nAdc ON CHARACTERISTICS DC Current Gain hFE IC = 0.1mAdc, VCE = 10Vdc 35 - IC = 1.0mAdc, VCE = 10Vdc 50 - IC = 10mAdc, VCE = 10Vdc 75 - IC = 10mAdc, VCE = 10Vdc, TA= -55°C 35 - IC = 150mAdc, VCE = 10VdcNOTE3 100 300 IC = 150mAdc, VCE = 1.0VdcNOTE3 50 - IC = 500mAdc, VCE = 10VdcNOTE3 40 - Collector-Emitter Saturation VoltageNOTE3 VCE(sat) IC = 150mAdc, IB = 15mAdc - 0.3 Vdc IC = 500mAdc, IB = 50mAdc - 1.0 Base-Emitter Saturation Voltage VBE(sat) IC = 150mAdc, IB = 15mAdc 0.6 1.2 Vdc IC = 500mAdc, IB = 50mAdc - 2.0

AiT Semiconductor Inc. www.ait-ic.com MBT2222AL SWITCHING TRANSISTOR NPN TRANSISTOR REV1.3 - MAY 2011 RELEASED, APR 2019 UPDATED - - 4 - Parameter Symbol Conditions Min Max Unit SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product NOTE4 fT IC = 20mAdc, VCE = 20Vdc, f = 100MHz 300 - MHz Output Capacitance Cobo VCB = 10Vdc, IE = 0, f = 1.0MHz - 8.0 pF Input Capacitance Cibo VEB = 0.5Vdc, IC = 0, f = 1.0MHz - 25 pF Input Impedance hie VCE = 10Vdc, IC = 1.0mAdc,f = 1.0kHz 2.0 8.0 kΩ VCE = 10Vdc, IC = 10mAdc, f = 1.0kHz 0.25 1.25 Voltage Feedback Ratio hre VCE = 10Vdc, IC = 1.0mAdc, f =1.0kHz - 8.0 x 10-4 VCE = 10Vdc, IC = 10mAdc, f = 1.0kHz - 4.0 Small-Signal Current Gain hfe VCE = 10Vdc, IC = 1.0mAdc, f = 1.0kHz 50 300 VCE = 10Vdc, IC = 10mAdc, f = 1.0kHz 75 375 Output Admittance hoe VCE = 10Vdc, IC = 1.0mAdc,f = 1.0kHz 5.0 35 μmhos VCE = 10Vdc, IC = 10mAdc, f = 1.0kHz 25 200 Current Base Time Comstant rb, CC VCB = 20Vdc, IE=20mAdc, f=31.8 MHz - 150 ps Noise Figure NF VCE = 10Vdc, IC = 100μAdc, RS =1.0kΩ, f =1.0kHz - 4.0 dB SWITCHING CHARACTERISTICS Delay Time td VCC = 30Vdc, VEB(off) = – 0.5Vdc, IC = 150mAdc, IB1 = 15mAdc - 10 ns Rise Time tr - 25 Storage Time ts VCC = 30Vdc, IC = 150mAdc, IB1 = IB2 = 15mAdc - 225 ns Fall Time tf - 60 NOTE3: Pulse Test: Pulse Width <300 μs, Duty Cycle <2.0%. NOTE4: fT is defined as the frequency at which︱hFE︱extrapolates to unity.

AiT Semiconductor Inc. www.ait-ic.com MBT2222AL SWITCHING TRANSISTOR NPN TRANSISTOR REV1.3 - MAY 2011 RELEASED, APR 2019 UPDATED - - 8 -

PACKAGE INFORMATION

Dimension in SOT-23 Package (Unit: mm) DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60

AiT Semiconductor Inc. www.ait-ic.com MBT2222AL SWITCHING TRANSISTOR NPN TRANSISTOR REV1.3 - MAY 2011 RELEASED, APR 2019 UPDATED - - 9 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant in formation to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, dev ices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server property, or environmental dam age. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.