MBT2222ADW1T1 ONSEMI | Alldatasheet

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 Semiconductor Components Industries, LLC, 2004 September , 2004 − Rev. 1

1 Publication Order Number:

General Purpose Transistor NPN Silicon

  • Moisture Sensitivity Level: 1
  • ESD Rating: Human Body Model − 4 kV Machine Model − 400 V MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCBO 75 Vdc Emitter−Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 600 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Package Dissipation (Note 1) TA = 25°C PD 150 mW Thermal Resistance, Junction−to−Ambient R JA 833 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. Device Package Shipping †

ORDERING INFORMATION

MBT2222ADW1T1 SOT−363 3000/T ape & Reel MARKING DIAGRAM Q 1 (1)(2)(3) (4) (5) (6) Q 2 SC−88/SC70−6/SOT−363 CASE 419B STYLE 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1P D 1P = Specific Device Code D = Date Code http://onsemi.com

http://onsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage C = 10 Adc, IE = 0) V(BR)CBO 75 − Vdc Emitter−Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 − Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) ICEX − 10 nAdc Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 125°C) ICBO 0.01 Adc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO − 100 nAdc Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) IBL − 20 nAdc ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C) (IC = 150 mAdc, VCE = 10 Vdc) (Note 2) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 2) (IC = 500 mAdc, VCE = 10 Vdc) (Note 2) hFE 100 300 Collector−Emitter Saturation Voltage (Note 2) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) 0.3 1.0 Vdc Base− Emitter Saturation Voltage (Note 2) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) 0.6 1.2 2.0 Vdc 2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.

http://onsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic UnitMaxMinSymbol SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 3) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 300 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) C obo − 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) C ibo − 25 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 2.0 0.25 8.0 1.25 k Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 8.0 4.0 X 10−4 Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 300 375 Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 5.0 200 mhos Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) rb, Cc − 150 ps Noise Figure (IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz) NF − 4.0 dB SWITCHING CHARACTERISTICS Delay Time (VCC = 30 Vdc, VBE (off) = −0.5 Vdc, td − 10 ns Rise Time (VCC = 30 Vdc, VBE(off) = −0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) tr − 25 ns Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts − 225 ns Fall Time (VCC = 30 Vdc, IC = 150 mAdc , IB1 = IB2 = 15 mAdc) tf − 60 ns 3. fT is defined as the frequency at which |hfe| extrapolates to unity.

Figure 5. Turn−On Time Figure 6. Turn−Off Time Figure 7. Frequency Effects Figure 8. Source Resistance Effects

500 A, RS = 200

Figure 9. Capacitances Figure 10. Current−Gain Bandwidth Product

Figure 11. “On” Voltages

0.2 V, VOLTAGE (VOLTS)

Figure 12. Temperature Coefficients

http://onsemi.com PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. DIM A MIN MAX MIN MAX MILLIMETERS 1.80 2.200.071 0.087 INCHES B 1.15 1.350.045 0.053 C 0.80 1.100.031 0.043 D 0.10 0.300.004 0.012 G 0.65 BSC0.026 BSC J 0.10 0.250.004 0.010 K 0.10 0.300.004 0.012 N 0.20 REF0.008 REF 123 A G S H C N J K 654 −B− D 6 PL SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE 02U STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 mm inchesSCALE 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 SOLDERING FOOTPRINT

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