MBT2222ADW

MBT2222ADW WEITRON | Alldatasheet

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http://www.weitron.com.tw WEITRON MBT2222ADW VCEO Value 150 833 -55 to+150T ,TstgJ MBT2222ADW=XX (1) u 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint SOT-363(SC-88) 4 5 NPN+NPN 1 2 3 6 5 4 NPN+NPN Silicon Dual General Purpose Transistors

SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (IC=20 mAdc, VCE=20 Vdc, f=100MHz) Output Capacitance (VCB=10 Vdc, IE=0, f=1.0MHz) Input Capacitance (VEB=0.5 Vdc, IC=0, f=1.0MHz) Input Impedance Voltage Feeback Radio S mall-S ignal C urrent G ain Output Admittance Collector Base Time Constant (IE=20 mAdc, VCB=20 Vdc, f=31.8 MHz) Noise Figure (IC=100 µAdc, VCE=10Vdc, RS=1.0k , f=1.0kHz) Cobo Cibo hre hfe 300 0.25 8.0 1.25 4.0 375 200 150 4.0 pF pF x 10-4 DC Current Gain (IC=0.1 mAdc, VCE=10 Vdc) (IC=1.0 mAdc, VCE=10 Vdc) (IC=10 mAdc, VCE=10 Vdc, T =-55 C) (IC=150mAdc, VCE=10 Vdc) (IC=500 mAdc, VCE=10 Vdc) Collector-Emitter Saturation Voltage (IC=150 mAdc, IB=15mAdc) (IC=500 mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (IC=150 mAdc, IB=15mAdc) (IC=500 mAdc, IB=50mAdc) hFE VCE(sat) VBE(sat) 300 - Vdc Vdc ON CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol UnitMin Max MBT2222ADW 100 (IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz) (IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz) (IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz) (IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz) (IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz) (IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz) (IC =10 mAdc, V C E =10V dc, f=1.0 kHz) (IC=10 mAdc, VCE=10Vdc, f=-1.0kHz) fT MHz hie hoe µmhos rb, Cc ps NF dB WEITRON http://www.weitron.com.tw 0.3 1.0 1.2 2.0 0.6 A (2) (2) (2) (2) (2) (I =150mAdc, V =1.0Vdc)C CE 50 (3) 2.0 0.8 8.0 30050 5.0 35 W Wk

ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol UnitMin Max MBT2222ADW SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC=30 Vdc, VBE=(off)=-0.5Vdc, IC=150 mAdc, IB1=15 mAdc) (VCC=30 Vdc, IC=150 mAdc, IB1=IB2=15 mAdc) td tr ts tf 225 ns ns 2.Pulse Test:Pulse Width 300 µs, Duty Cycle 2.0%. 3.fT is defined as the frequency at which Ihfe extrapolates to unity. <= <= WEITRON http://www.weitron.com.tw F igure 1. Turn-On Time F igure 2. Turn-Off Time S WIT C HING T IME E QUIVA L E NT T E S T C IR C UIT S S cope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. +16 V -2 V < 2 ns 1.0 to 100 ms, DUTY CYCLE 2.0% 1 kW +30 V 200 CS* < 10 pF +16 V -14 V < 20 ns 1.0 to 100 ms, DUTY CYCLE 2.0% 1 k +30 V 200 CS* < 10 pF -4 V 1N914 1000 100 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (mA) F igure 3. DC C urrent G ain hFE, DC CURRENT GAIN ~~ ~~

http://www.weitron.com.tw VCE , COLLECTOR-EMITTER VOL TAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 IB, BASE CURRENT (m A) F igure 4. C ollector S aturation R egion F igure 5. Turn-On Time IC, COLLECTOR CURRENT (mA) 100 200 t, TIME (ns) 10 20 70 5.0 1005.0 7.0 30 50 200 7.0 IC/IB = 10 TJ = 25 C tr @ V CC = 30 V td @ V EB(off) = 2.0 V td @ V EB(off) = 0 3.0 2.0 300 500 500 t, TIME (ns) 5.0 7.0 100 200 300 F igure 6. Turn-Off Time IC, COLLECTOR CURRENT (mA) 10 20 70 1005.0 7.0 30 50 200 300 500 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25 C t s = ts - 1/8 tf tf F igure 7. F requency E ffects f, FREQUENCY (kHz) 4.0 6.0 8.0 2.0 0.1 F igure 8. S ource R es is tance E ffects RS, SOURCE RESIST ANCE (OHMS) NF, NOISE FIGURE (dB) 100 NF, NOISE FIGURE (dB) 0.01 0.02 0.05 RS = OPTIMUM RS = SOURCE RS = RESIST ANCE IC = 1.0 mA, RS = 150 W 500 mA, RS = 200 W 100 mA, RS = 2.0 kW 50 mA, RS = 4.0 kW f = 1.0 kHz IC = 50 mA 100 mA 500 mA 1.0 mA 4.0 6.0 8.0 2.0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k

http://www.weitron.com.tw F igure 9. C apac itanc es REVERSE VOLTAGE (VOLTS) 3.0 5.0 7.0 2.0 0.1 CAPACITANCE (pF) Ccb Ceb F igure 10. C urrent±G ain B andwidth P roduct IC, COLLECTOR CURRENT (mA) 100 200 300 500 fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) VCE = 20 V TJ = 25 C F igure 11. " On" Voltages IC, COLLECTOR CURRENT (mA) 0.4 0.6 0.8 1.0 0.2 V, VOLTAGE (VOLTS) TJ = 25 C VBE(sat) @ I C/IB = 10 VCE(sat) @ I C/IB = 10 VBE(on) @ V CE = 10 V F igure 12. Temperature C oefficients IC, COLLECTOR CURRENT (mA) -0.5 +0.5 COEFFICIENT (mV/ C) -1.0 -1.5 -2.5 R VC for VCE(sat) R VB for VBE 1.0 V -2.0

http://www.weitron.com.tw 1 2 3 A K J ML 6 5 4 B D H E C Dim A B C D E H J K L M Min 0.10 1.15 2.00 0.30 1.80 0.80 0.25 0.10

0.65 REF

0.30 1.35 2.20 0.40 2.20 0.10 1.10 0.40 0.25 SOT-363