MBT2222ADW AITSEMI | Alldatasheet

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AiT Semiconductor Inc. www.ait-ic.com MBT2222AD DUAL GENERAL PURPOSE TRANSISTORS SWITCHINGTRANSISTORS REV1.0 - APR 2011 RELEASED - - 1 - DESCRIPTION FEATURES The MBT2222AD is available in SC-88 package.  RoHS compliance  Available in SC-88 package ORDERING INFORMATION PIN DESCRIPTION Package Type Part Number SC-88 MBT2222AD-1 Note Package Q’ty/Reel 1=3,000pcs/Reel AiT provides all RoHS Compliant Products

AiT Semiconductor Inc. www.ait-ic.com MBT2222AD DUAL GENERAL PURPOSE TRANSISTORS SWITCHINGTRANSISTORS REV1.0 - APR 2011 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS TA = 25°C VCEO, Collector-Emitter Voltage 40Vdc VCBO , Collector-Base Voltage 75Vdc VEBO, Emitter-Base Voltage 6.0Vdc IC , Collector Current-Continuous 600mAdc Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS Parameter Symbol Max Unit Total Package Dissipation TA = 25°C PD 150 mW Thermal Resistance, Junction to Ambient RθJA 833 °C/W Junction and Storage Temperature TJ, Tstg -55 to +150 °C

AiT Semiconductor Inc. www.ait-ic.com MBT2222AD DUAL GENERAL PURPOSE TRANSISTORS SWITCHINGTRANSISTORS REV1.0 - APR 2011 RELEASED - - 3 -

ELECTRICAL CHARACTERISTICS

TA = 25°C unless otherwise noted NOTE1: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle 3 2.0%. Parameter Symbol Conditions Min Max Unit OFFCHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mAdc, IB = 0 40 - Vdc Collector-Base Breakdown Voltage V(BR)CBO IC = 10μAdc, IE = 0 75 - Vdc Emitter-Base Breakdown Voltage V(BR)EBO IE = 10μAdc, IC = 0 6.0 - Vdc Collector Cutoff Current ICEX VCE = 60Vdc, VEB(off) = 3.0Vdc - 10 nAdc Collector Cutoff Current ICBO VCB = 60Vdc, IE = 0 - 0.01 μAdc VCB = 60Vdc, IE = 0, TA = 125°C - 10 Emitter Cutoff Current IEBO VEB = 3.0Vdc, IC = 0 - 100 nAdc Base Cutoff Current IBL VCE = 60Vdc, VEB(off) = 3.0Vdc - 20 nAdc ON CHARACTERISTICS DC Current Gain hFE IC = 0.1mAdc, VCE = 10Vdc 35 - - IC = 1.0mAdc, VCE = 10Vdc 50 - - IC = 10mAdc, VCE = 10Vdc 75 - - IC = 10mAdc, VCE = 10Vdc, TA = -55°C 35 - - IC = 150mAdc, VCE = 10Vdc NOTE1 100 300 - IC = 150mAdc, VCE = 1.0Vdc NOTE1 50 - - IC = 500mAdc, VCE = 10Vdc NOTE1 40 - - Collector–Emitter Saturation Voltage NOTE1 VCE(sat) IC = 150mAdc, IB = 15mAdc - 0.3 Vdc IC = 500mAdc, IB = 50mAdc - 1.0 Base–Emitter Saturation Voltage NOTE1 VBE(sat) IC = 150mAdc, IB = 15mAdc - 1.2 Vdc IC = 500mAdc, IB = 50mAdc 0.6 2.0

AiT Semiconductor Inc. www.ait-ic.com MBT2222AD DUAL GENERAL PURPOSE TRANSISTORS SWITCHINGTRANSISTORS REV1.0 - APR 2011 RELEASED - - 4 - TA = 25°C unless otherwise noted NOTE2: fT is defined as the frequency at which |hfe| extrapolates to unity. Parameter Symbol Conditions Min Max Unit SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwid th Product NOTE2 fT IC = 20mAdc, VCE = 20Vdc, f = 100 MHz 300 - MHz Output Capacitance Cobo VCB = 10Vdc, IE = 0, f = 1.0 MHz - 8.0 pF Input Capacitance Cibo VEB = 0.5Vdc, IC = 0, f = 1.0 MHz - 25 pF Input Impedance hie IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2.0 8.0 kΩ IC = 10mAdc, VCE = 10Vdc, f = 1.0 kHz 0.25 1.25 Voltage Feedback Ratio hre IC = 1.0mAdc, VCE = 10Vdc, f = 1.0 kHz - 8.0 x10–4 IC = 10mAdc, VCE = 10Vdc, f = 1.0 kHz - 4.0 Small–Signal Current Gain hfe IC = 1.0mAdc, VCE = 10Vdc, f = 1.0 kHz 50 300 IC = 10mAdc, VCE = 10Vdc, f = 1.0 kHz 75 375 Output Admittance hoe IC = 1.0mAdc, VCE = 10Vdc, f = 1.0 kHz 5.0 35 μmhos IC = 10mAdc, VCE = 10Vdc, f = 1.0 kHz 25 200 Collector Base Time Constant rb, Cc IE = 20mAdc, VCB = 20Vdc, f = 31.8 MHz - 150 ps Noise Figure NF IC = 100μAdc, VCE = 10Vdc, RS = 1.0 kW, f = 1.0 kHz - 4.0 dB SWITCHING CHARACTERISTICS Delay Time td VCC = 30Vdc, VBE(off) = -0.5Vdc, IC = 150mAdc, IB1 = 15mAdc - 10 ns Rise Time tr - 25 Storage Time ts VCC = 30Vdc, IC = 150mAdc, IB1 = IB2 = 15mAdc - 225 ns Fall Time tf - 60

AiT Semiconductor Inc. www.ait-ic.com MBT2222AD DUAL GENERAL PURPOSE TRANSISTORS SWITCHINGTRANSISTORS REV1.0 - APR 2011 RELEASED - - 7 -

PACKAGE INFORMATION

Dimension in SC–88 Package (Unit: mm) DIM MILLIMETERS INCHES MIN MAX MIN MAX A 1.80 2.20 0.071 0.087 B 1.15 1.35 0.045 0.053 C 0.80 1.10 0.031 0.043 D 0.10 0.30 0.004 0.012 G 0.65 BSC 0.026 BSC H - 0.10 - 0.004 J 0.10 0.25 0.004 0.010 K 0.10 0.30 0.004 0.012 N 0.20 REF 0.008 REF S 2.00 2.20 0.079 0.087

AiT Semiconductor Inc. www.ait-ic.com MBT2222AD DUAL GENERAL PURPOSE TRANSISTORS SWITCHINGTRANSISTORS REV1.0 - APR 2011 RELEASED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.