MBQ25T120FESC

MBQ25T120FESC MGCHIP | Alldatasheet

Document overview

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Technical content

Features

 High Speed Switching & Low VCE(sat) Loss  VCE(sat) = 2.0V @IC = 25A  High Input Impedance  trr = 100ns (typ.) @ diF/dt = 500A/ μs  Maximum junction temperature 175°C  Pb-free ; RoHS compliant  Ultra Soft, fast recovery anti-parallel diode  Ultra Narrowed VF distribution control  Positive Temperature coefficient for easy paralleling

Applications

 PFC  UPS General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. This device is for PFC, UPS & PV inverter and Welder Applications.  Welder  PV Inverter

Sep. 2015 Revision 1.0 MagnaChip Semiconductor Ltd. 2 MBQ25T120FESC 1200V Fieldstop Trench IGBT

Ordering Information

Part Number Marking Temp. Range Package Packing RoHS Status MBQ25T120FESCTH 25T120FESC -55~175°C TO-247 Tube Halogen Free Electrical Characteristic (Tvj = 25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Static Characteristic Collector-emitter breakdown voltage BVCES IC = 500μA, VGE = 0V 1200 - - V Collector-emitter saturation voltage VCE(sat) IC = 25A, VGE = 15V, Tvj = 25°C 2.0 2.4 V IC = 25A, VGE = 15V, Tvj = 150°C 2.4 IC = 25A, VGE = 15V, Tvj = 175°C 2.5 Diode forward voltage VF VGE = 0V, IF = 12.5A Tvj = 25°C 2.1 2.6 V Tvj = 175°C 1.9 Diode forward voltage VF VGE = 0V, IF = 25A Tvj = 25°C 2.5 3.0 V Tvj = 150°C 2.55 Tvj = 175°C 2.45 Gate-emitter threshold voltage VGE(th) VCE = VGE, IC = 0.85mA 5.0 6.0 7.0 V Zero gate voltage collector current ICES VCE = 1200V, VGE = 0V Tvj = 25°C - - 250 μA Tvj = 175°C - - 2500 Gate-emitter leakage current IGES VGE = 20V, VCE = 0V - - ±250 nA Transconductance gfs VCE = 20V, IC = 25A, 16 S Dynamic Characteristic Total gate charge Qg VCE = 960V, IC = 25A, VGE = 15V - 204 nC Gate-emitter charge Qge - 34 Gate-collector charge Qgc - 94 Input capacitance Cies VCE = 25V, VGE = 0V, f = 1MHz - 3942 - pF Reverse transfer capacitance Cres - 72 - Output capacitance Coes - 142 - Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13.0 - nH Short circuit collector current Max. 1000 short circuits Time between short circuits: ≥ 1.0s IC(SC) VGE = 15V, VCC = 600V, tSC ≤ 10μs, Tvj = 175°C - 121 - A Switching Characteristic Turn-on delay time td(on) VGE = 15V, VCC = 600V, IC = 25A, RG = 23Ω, Inductive Load, Tvj = 25°C - 73 - ns Rise time tr - 41 - Turn-off delay time td(off) - 269 - Fall time tf - 39 - Turn-on switching energy Eon - 1.44 - mJ Turn-off switching energy Eoff - 0.55 - Total switching energy Ets - 1.99 - Reverse recovery time trr IF = 25A, diF/dt = 500A/ μs, VR = 600V, Tvj = 25°C - 100 - ns Reverse recovery current Irr - 17 - A Reverse recovery charge Qrr - 0.85 - μC Rate of fall of reverse recovery current during tb dirr/dt - -376 - A/μs

Sep. 2015 Revision 1.0 MagnaChip Semiconductor Ltd. 3 MBQ25T120FESC 1200V Fieldstop Trench IGBT Switching Characteristic Turn-on delay time td(on) VGE = 15V, VCC = 600V, IC = 25A, RG = 23Ω, Inductive Load, Tvj = 175°C - 65 - ns Rise time tr - 45 - Turn-off delay time td(off) - 292 - Fall time tf - 75 - Turn-on switching energy Eon - 2.43 - mJ Turn-off switching energy Eoff - 1.09 - Total switching energy Ets - 3.52 - Reverse recovery time trr IF = 25A, diF/dt = 500A/ μs, VR = 600V, Tvj = 175°C - 150 - ns Reverse recovery current Irr - 25 - A Reverse recovery charge Qrr - 1.85 - nC Rate of fall of reverse recovery current during tb dirr/dt - -374 - A/μs

Sep. 2015 Revision 1.0 MagnaChip Semiconductor Ltd. 4 MBQ25T120FESC 1200V Fieldstop Trench IGBT 0 1 2 3 4 5 100 120 TJ = 25'C TJ = 175'C Forward Current, IF [A] Forward Voltage, VF[V] Fig.5 Diode Forward Characteristic Fig.6 Diode Forward-Junction Temperature 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 4.0 12.5A 20A 50A Forward Voltage, VF [V] Junction Temperature, TJ [C] 5 6 7 8 9 10 11 12 13 VCE = 20V TJ = 25'C TJ = 175'C Collector Current, IC [A] Gate-Emitter Voltage VGE [V] Fig.1 Typical Output Characteristic(TJ=25℃) Fig.2 Typical Output Characteristic(TJ=175℃) Fig.3 Typical Transfer Characteristic Fig.4 Typical Collector-Emitter Saturation Voltage -Junction Temperature 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGE = 15V 12.5A 25A 50A Collector-Emitter Voltage, VCE [V] Junction Temperature, TJ [C] 0 1 2 3 4 5 6 100 17V TJ = 25C 11V 15V VGE = 7V 13V 20V Collector Current, IC [A] Collector-Emitter Voltage VCE [V] 0 1 2 3 4 5 6 7 100 20V 17V TJ = 175C 11V 15V VGE = 7V 13V Collector Current, IC [A] Collector-Emitter Voltage VCE [V]

Sep. 2015 Revision 1.0 MagnaChip Semiconductor Ltd. 5 MBQ25T120FESC 1200V Fieldstop Trench IGBT 10 20 30 40 50 100 120 td(on) tr VCC = 600V VGE = 15V RG = 23ohm TC = 175'C Switching Time [nS] Collector Current, IC [A] 10 20 30 40 50 Eoff Eon VCC = 600V VGE = 15V RG = 23ohm TC = 175'C Switching Loss [mJ] Collector Current, IC [A] 0 5 10 15 20 25 30 100 1000 Cies Cres Coes VGE = 0V f = 1MHz Capacitance [pF] Collector-Emitter Voltage, VCE [V] Fig.9 Typical Gate Charge 0 50 100 150 200 250 VCC = 240V VCC = 960V Gate-Emitter Voltage, VGE, [V] Total Gate Charge, QG [nC] Fig.12 Switching Loss-Collector Current Fig.10 Typical Turn on-Collector Current Fig.11 Typical Turn off-Collector Current 10 20 30 40 50 100 1000 td(off) tf VCC = 600V VGE = 15V RG = 23ohm TC = 175'C Switching Time [nS] Collector Current, IC [A] Fig.8 Typical Capacitance Fig.7 Threshold Voltage-Junction Temperature 25 50 75 100 125 150 175 max. typ. min. Threshold Voltage, VGE(th) [V] Junction Temperature, TJ [C]

Sep. 2015 Revision 1.0 MagnaChip Semiconductor Ltd. 6 MBQ25T120FESC 1200V Fieldstop Trench IGBT 10 20 30 40 50 60 100 120 140 160 td(on) tr VCC = 600V VGE = 15V IC = 25A TJ = 175'C Switching Time [nS] Gate Resistance, RG [ohm] 25 50 75 100 125 150 175 Ets Eon Eoff VCC = 600V VGE = 15V IC = 25A RG = 23ohm Switching Loss [mJ] Junction Temperature, TJ [C] 25 50 75 100 125 150 175 100 td(on) tr VCC = 600V VGE = 15V IC = 25A RG = 23ohm turn on [ns] Junction Temperature, TJ [C] 25 50 75 100 125 150 175 100 1000 td(off) tf VCC = 600V VGE = 15V IC = 25A RG = 23ohm turn off [ns] Junction Temperature, TJ [C] Fig.15 Switching Loss-Gate Resistance 10 20 30 40 50 60 Eon Eoff Ets VCC = 600V VGE = 15V IC = 25A TJ = 175'C Switching Loss [mJ] Gate Resistance, RG [ohm] Fig.13 Turn on Characteristic-Gate Resistance 10 20 30 40 50 60 100 1000 td(off) tf VCC = 600V VGE = 15V IC = 25A TJ = 175'C Switching Time [nS] Gate Resistance, RG [ohm] Fig.14 Turn off Characteristic-Gate Resistance Fig.18 Switching Loss-Junction Temperature Fig.16 Turn on Characteristic -Junction Temperature Fig.17 Turn off Characteristic -Junction Temperature

Sep. 2015 Revision 1.0 MagnaChip Semiconductor Ltd. 7 MBQ25T120FESC 1200V Fieldstop Trench IGBT 400 450 500 550 600 650 700 750 800 Ets Eon Eoff VGE = 15V IC = 25A RG = 23ohm TJ = 175'C Switching Loss [mJ] Collector-Emitter Voltage, VCE [V] 200 400 600 800 1000 1200 TJ = 25'C TJ = 175'C IF = 25A Reverse Recovery Charge Qrr [uC] Diode Current Slope, diF/dt [A/us] 400 500 600 700 800 900 1000 1100 1200 TJ = 25'C TJ = 175'C IF = 25A Reverse Recovery Current Irr [A] Diode Current Slope, diF/dt [A/us] 400 500 600 700 800 900 1000 1100 1200 -1400 -1200 -1000 -800 -600 -400 -200 TJ = 25'C TJ = 175'C IF = 25A Rate of fall of Irr, dirr/dt [A/us] Diode Current Slope, diF/dt [A/us] 1 10 100 1000 0.1 100 100us DC 500us 200us 50us 10us tp=1us Collector Current, IC [A] Collector-Emitter Voltage, VCE [V] Fig.24 Forward Bias Safe Operating Area Fig.21 Reverse Recovery Charge -Diode Current Slope Fig.19 Switching Loss-Collector Emitter Voltage Fig.22 Reverse Recovery Current -Diode current slope Fig.23 Rate of fall of reverse recovery current -Diode Current Slope 200 400 600 800 1000 1200 100 120 140 160 180 200 220 TJ = 25'C TJ = 175'C IF = 25A Reverse Recovery Time, trr [ns] Diode Current Slope, diF/dt [A/us] Fig.20 Reverse Recovery Time -Diode current slope

Sep. 2015 Revision 1.0 MagnaChip Semiconductor Ltd. 8 MBQ25T120FESC 1200V Fieldstop Trench IGBT 1x10 1x10 single pulse Rectangular Pulse width [sec] Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z? JC * R? JC(t) + TC D=0.9 0.02 0.5 0.05 0.1 0.01 Thermal Response [Z? JC ] 1x10 1x10 single pulse Rectangular Pulse width [sec] Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z? JC * R? JC(t) + TC D=0.9 0.02 0.5 0.05 0.1 0.01 Thermal Response [Z th-JC ] 10 12 14 16 18 100 150 200 VCE=600V TC =25'C Short Circuit Collector current, IC(SC) [A] Gate-Emitter Voltage, VGE [V] Fig.25 Typical Short Circuit Collector Current 10 12 14 16 18 20 VCE =600V TC = 150'C Short Circuit Withstand Time, tSC [? ] Gate-Emitter Voltage, VGE [V] Fig.26 Typical Short Circuit Withstand Time Fig.27 Case Temperature-Collector Current Fig.29 IGBT Transient Thermal Impedance 25 50 75 100 125 150 175 Collector Current, IC [A] Case Temperature, TC [C] Fig.30 FRD Transient Thermal Impedance Fig.28 Power Dissipation-Case Temperature 25 50 75 100 125 150 175 100 150 200 250 300 350 Power Dissipation, Ptot [A] Case Temperature, TC [C]

Sep. 2015 Revision 1.0 MagnaChip Semiconductor Ltd. 9 MBQ25T120FESC 1200V Fieldstop Trench IGBT E D Q L e b A A1c ΦP S Physical Dimension TO-247 Dimensions are in millimeters, unless otherwise specified Dimension Min(mm) Max(mm) A 4.70 5.31 A1 2.20 2.60 A2 1.50 2.49 b 0.99 1.40 b1 2.59 3.43 b2 1.65 2.39 c 0.38 0.89 D 20.30 21.46 D1 13.08 - E 15.45 16.26 E1 13.06 14.02 E2 4.32 5.49 e 5.45BSC L 19.81 20.57 L1 - 4.50 ΦP 3.50 3.70 Q 5.38 6.20 S 6.15BSC

Sep. 2015 Revision 1.0 MagnaChip Semiconductor Ltd. 10 MBQ25T120FESC 1200V Fieldstop Trench IGBT DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to resu lt in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consid er responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registere d trademark of MagnaChip Semiconductor Ltd.