MBL1S DGNJDZ | Alldatasheet

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Technical content

■特征 Features ■外形尺寸 Outline Dimensions and Mark I o 0.8A V RRM 100V~1000V 玻璃钝化芯片 Glass passivated chip 耐正向浪涌电流能力高 High surge forward current capability 用途

Applications

作一般电源单相桥式整流用 General purpose phase Bridge rectifier 极限值（绝对最大额定值） Limiting Values（Absolute Maximum Rating） 参数名称 Item 符号 Symbol 单位 Unit 条件 Conditions MBL 10S 反向重复峰值电压 Repetitive Peak Reverse V oltage V RRM V 100 200 400 600 800 1000 平均整流输出电流 Average Rectified Output Current I O A 60Hz正弦波， 电阻负载， Ta=25℃ 60Hz sine wave, R-load, Ta=25℃ 安装在氧化铝基板上 On alumina substrate 0.8 安装在玻璃-环氧基板上 On glass-epoxi substrate 0.5 正向（不重复）浪涌电流 Surge(Non- repetitive)Forward Current I FSM A 60H Z 正弦波，一个周期，T j =25℃ 60H Z sine wave, cycle, T j =25℃ 正向浪涌电流的平方对电流 浪涌持续时间的积分值 Current Squared Time I t A S 1ms≤t<8.3ms Tj=25℃，单个二极管 1ms≤t<8.3ms Tj=25℃，Rating of per diode 5.1 存储温度 Storage Temperature T stg -55 ~+150 结温 Junction Temperature T j -55 ~+150 电特性 （Ta=25℃ 除非另有规定）

Electrical Characteristics

a =25℃ Unless otherwise specified） 参数名称 Item 符号 Symbol 单位 Unit 测试条件 Test Condition 最大值 Max 正向峰值电压 Peak Forward Voltage V FM V I FM =0.4A, 脉冲测试，单个二极管的额定值 I FM =0.4A, Pulse measurement, Rating of per diode 1.0 反向峰值电流 Peak Reverse Current I RRM μ A V RM RRM ,脉冲测试，单个二极管的额定值 V RM RRM Pulse measurement, Rating of per diode 热阻 Thermal Resistance R θ J-A ℃/W 结和环境之间，安装在氧化铝基板上 Between junction and ambient, On alumina substrate 结和环境之间，安装在玻璃-环氧基板上 Between junction and ambient, On glass-epoxi substrate 134 R θ J-L 结和引线之间 Between junction and lead Dimensions in inches and (millimeters) .157(4.50) .142(3.60) .268(6.50) .283(7.20) .102(2.60) .087(2.20) .193(5.00) .177(4.50) .033(0.84) .022(0.56) .014(0.35) .006(0.15) .008(0.20) MAX .059(1.50) .051(1.30) .063(1.60) .055(1.40) .043(1.10) .028(0.70) MBLS Bridge Rectifier

特性曲线（典型） Characteristics(Typical) 0.2 Io(A) Ta( Io-Ta曲线 FIG1:Io-Ta Curve 160 正弦波，电阻负载， 用散热片 sine wave R-load with heatsink 40 80 120 0.4 0.6 0.8 1.0 1.2 焊接区soldering land 1mm×1mm 1mm×1mm 导体箔conductor layer 35um 20um 基板厚度substrate thickness 0.64mm ①在玻璃-环氧基板上 on glass-epoxi substrate ②在氧化铝基板上 on alumina substrate 0.01 0.02 0.05 VF(V) IF(A) 图3：正向电压曲线 FIG3: Forward Voltage 0.1 0.5 Ta=25 0 20 40 60 80 100 0.01 0.1 1.0 100 Voltage(%) IR(uA) Tj=150 Tj=25 FIG4:Typical Reverse Characteristics 图4：反向电流曲线 IFSM(A) 图2：耐正向浪涌电流曲线 2 5 10 20 50 100 正弦波 sine wave 不重复 non-repetitive Tj=25 FIG2:Surge Forward Current Capadility Number of Cycles 8.3ms 1cycle IFSM 8.3ms MBL1S THRU MBL10S Bridge Rectifier