MBF15T65PEH MGCHIP | Alldatasheet
Document overview
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Technical content
Features
High ruggedness for motor control VCE(sat) positive temperature coefficient Very soft, fast recovery anti-parallel diode Low EMI Maximum junction temperature 175°C
Applications
Inverter for motor control General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness. This device is for motor control. TO-220F C G E G : Gate C : Collector E : Emitter
Apr. 2017. Version 1.0 MagnaChip Semiconductor Ltd. 2 MBF15T65PEH 650V FieldStop Trench IGBT Datasheet
Ordering Information
Part Number Marking Temp. Range Package Packing RoHS Status MBF15T65PEHTH 15T65PEH -55~150°C TO-220F Tube Halogen Free Electrical Characteristics (Tvj = 25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Static Characteristics Collector-emitter breakdown voltage BVCES IC = 2mA, VGE = 0V 650 - - V Collector-emitter saturation voltage VCE(sat) IC = 15A, VGE= 15V Tvj = 25°C 1.65 2.00 V Tvj = 175°C 1.90 Diode forward voltage VF VGE = 0V, IF = 15A Tvj = 25°C 1.85 2.30 V Tvj = 175°C 1.95 Gate-emitter threshold voltage VGE(th) VCE = VGE, IC = 0.5mA 4.5 5.5 6.5 V Zero gate voltage collector current ICES VCE = 650V, VGE = 0V, Tvj = 25°C - - 20 μA Gate-emitter leakage current IGES VGE = 20V, VCE = 0V - - ±100 nA Dynamic Characteristics Total gate charge QG VCE = 520V, IC = 15A, VGE = 15V - 61 nC Gate-emitter charge QGE - 11 Gate-collector charge QGC - 35 Input capacitance Cies VCE = 25V, VGE = 0V, f = 1MHz - 1129 - pF Output capacitance Coes - 57 - Reverse transfer capacitance Cres - 31 - Switching Characteristics Turn-on delay time td(on) VGE = 15V, VCC = 400V, IC = 15A, RG = 10Ω, Inductive Load, Tvj = 25°C - 19 - ns Rise time tr - 27 - Turn-off delay time td(off) - 128 - Fall time tf - 32 - Turn-on switching energy Eon - 270 - μJ Turn-off switching energy Eoff - 86 - Total switching energy Ets - 356 - Turn-on delay time td(on) VGE = 15V, VCC = 400V, IC = 15A, RG = 10Ω, Inductive Load, Tvj = 175°C - 17 - ns Rise time tr - 29 - Turn-off delay time td(off) - 150 - Fall time tf - 130 - Turn-on switching energy Eon - 342 - μJ Turn-off switching energy Eoff - 288 - Total switching energy Ets - 630 - Reverse recovery time trr IF = 15A, diF/dt = 200A/ μs, Tvj = 25°C - 150 - ns Reverse recovery current Irr - 5.2 - A Reverse recovery charge Qrr - 390 - nC Reverse recovery time trr IF = 15A, diF/dt = 200A/ μs, Tvj = 175°C - 207 - ns Reverse recovery current Irr - 6.1 - A Reverse recovery charge Qrr - 631 - nC
Apr. 2017. Version 1.0 MagnaChip Semiconductor Ltd. 3 MBF15T65PEH 650V FieldStop Trench IGBT Datasheet
Apr. 2017. Version 1.0 MagnaChip Semiconductor Ltd. 4 MBF15T65PEH 650V FieldStop Trench IGBT Datasheet
Apr. 2017. Version 1.0 MagnaChip Semiconductor Ltd. 5 MBF15T65PEH 650V FieldStop Trench IGBT Datasheet
Apr. 2017. Version 1.0 MagnaChip Semiconductor Ltd. 6 MBF15T65PEH 650V FieldStop Trench IGBT Datasheet
Apr. 2017. Version 1.0 MagnaChip Semiconductor Ltd. 7 MBF15T65PEH 650V FieldStop Trench IGBT Datasheet Package outline dimension TO-220F
Apr. 2017. Version 1.0 MagnaChip Semiconductor Ltd. 8 MBF15T65PEH 650V FieldStop Trench IGBT Datasheet DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd.